Apparatuses and methods for TSV resistance and short measurement in a stacked device
First Claim
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1. An apparatus comprising:
- a chip comprising;
a semiconductor substrate including a first surface and a second surface opposite to the first surface;
a first terminal formed above the first surface;
a second terminal formed above the second surface, wherein the second terminal is arranged to shift in a vertical direction without arranging above the first terminal in the vertical direction;
a buffer circuit coupled between the first and second terminals;
a first through-substrate via (TSV) penetrating the semiconductor substrate; and
a first switch coupled between the first terminal and the first TSV.
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Abstract
Examples described herein include apparatuses and methods TSV resistance and short measurement in a stacked device. An example apparatus may include a chip comprising semiconductor substrate including a first surface and a second surface opposite to the first surface. The chip may include a first terminal formed above the first surface, a second terminal formed above the second surface, a buffer circuit coupled between the first and second terminals, a first through-substrate via (TSV) penetrating the semiconductor substrate, and a first switch coupled between the first terminal and the first TSV.
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Citations
13 Claims
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1. An apparatus comprising:
a chip comprising; a semiconductor substrate including a first surface and a second surface opposite to the first surface; a first terminal formed above the first surface; a second terminal formed above the second surface, wherein the second terminal is arranged to shift in a vertical direction without arranging above the first terminal in the vertical direction; a buffer circuit coupled between the first and second terminals; a first through-substrate via (TSV) penetrating the semiconductor substrate; and a first switch coupled between the first terminal and the first TSV. - View Dependent Claims (2, 3, 4, 5)
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6. An apparatus, comprising:
a chip comprising; a semiconductor substrate including a first surface and a second surface opposite to the first surface; a first terminal formed above the first surface; a second terminal formed above the second surface, wherein the second terminal is arranged to shift in a vertical direction without arranging above the first terminal in the vertical direction; a buffer circuit coupled between the first and second terminals; a first through-substrate via (TSV) penetrating the semiconductor substrate; and a first switch coupled between the first terminal and the first TSV, wherein the first switch is a p-type transistor.
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7. An apparatus comprising:
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first, second, third and fourth chips stacked in this order, each of the first, second, third and fourth chips including first, second, third and fourth terminals formed above a first surface thereof, a memory cell array, and a buffer circuit; wherein each of the first, second and third chips includes fifth, sixth, seventh and eighth terminals formed above a second surface opposite to the first surface, the buffer circuit coupled in series between the first terminal and the eighth terminal, the second terminal coupled to the fifth terminal, the third terminal coupled to the sixth terminal and the fourth terminal coupled to the seventh terminal, and wherein each of the first, second and third chips includes first, second, third and fourth through-substrate vias (TSVs), each of the first to fourth TSVs penetrates a substrate; and a control circuit configured to be able to connect the first terminal to at least one of the first and second TSVs and further configured to be able to connect the eighth terminal to at least one of the third and fourth TSVs. - View Dependent Claims (8, 9, 10, 11, 12, 13)
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Specification