Magnetoresistance element and non-volatile semiconductor storage device using same magnetoresistance element
First Claim
1. A method comprising:
- forming a pinned layer, an insulation layer, and a storage layer;
forming a heat assist layer above the storage layer using reactive sputtering; and
forming an upper electrode above the heat assist layer using magnetron sputtering, wherein the pinned layer, the insulation layer, and the storage layer are formed using magnetron sputtering.
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Accused Products
Abstract
The invention provides a magnetoresistance element with a configuration such that a stable switching action is possible with a current flowing in response to the application of a unipolar electrical pulse, and a non-volatile semiconductor storage device using the magnetoresistance element.
A magnetoresistance element 1-1 includes a magnetic tunnel junction portion 13 configured by sequentially stacking a perpendicularly magnetized first magnetic body 22, an insulation layer 21, and a perpendicularly magnetized second magnetic body 200. The second magnetic body 200 has a configuration wherein a ferromagnetic layer and a rare earth-transition metal alloy layer are stacked sequentially from the insulation layer 21 side interface. A heat assist layer 28-1 that heats the second magnetic body 200 with a heat generated based on a current flowing through the magnetic tunnel junction portion 13 is further provided, and the magnetization direction of the second magnetic body 200 is reversed by the heating of the second magnetic body 200. A non-volatile semiconductor storage device 10-1 includes the magnetoresistance element 1-1, a switching element connected in series to the magnetoresistance element 1-1, information rewriting means that carries out a write and erase by causing a write current to flow through the magnetoresistance element 1-1, and reading means that reads information stored from the amount of current flowing through the magnetoresistance element 1-1.
28 Citations
16 Claims
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1. A method comprising:
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forming a pinned layer, an insulation layer, and a storage layer; forming a heat assist layer above the storage layer using reactive sputtering; and forming an upper electrode above the heat assist layer using magnetron sputtering, wherein the pinned layer, the insulation layer, and the storage layer are formed using magnetron sputtering. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method comprising:
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forming a heat assist layer using magnetron sputtering; above the heat assist layer, forming a pinned layer, an insulation layer, and a storage layer; and forming an upper electrode above the storage layer using magnetron sputtering, wherein the pinned layer, the insulation layer, and the storage layer are formed using magnetron sputtering. - View Dependent Claims (11, 12, 13, 14, 15, 16)
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Specification