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Scaled nanotube electrode for low power multistage atomic switch

  • US 10,468,593 B1
  • Filed: 04/11/2018
  • Issued: 11/05/2019
  • Est. Priority Date: 04/11/2018
  • Status: Active Grant
First Claim
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1. A method of forming a memory device comprising:

  • positioning a carbon nanotube within a trench of an oxide containing material;

    patterning the trench to provide a via to the carbon nanotube, wherein the via to the carbon nanotubes defines a memory cell;

    depositing a dielectric for cation transportation within the trench on the carbon nanotube; and

    forming an electrode on the dielectric for cation transportation, wherein the electrode is composed of a metal.

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