System and method for physically detecting counterfeit electronics
First Claim
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1. A system for inspecting or screening a discrete semiconductor or an integrated circuit for counterfeits, said system comprising:
- (a) a high precision signal source configured to generate a high precision oscillator signal for driving at least one of a signal input and a clock input of the discrete semiconductor or the integrated circuit, said high precision signal source is being selected from a group consisting of a temperature compensated Crystal Oscillator (TCXO), a microcomputer compensated Crystal Oscillator (MXCO), an Oven Controlled Crystal Oscillator (OCXO), a small atomic frequency standard oscillator and a Rubidium oscillator (RbXO);
(b) a receiver coupled to an antenna and configured to collect electromagnetic energy in a radio frequency (RF) spectrum emitted by the discrete semiconductor or the integrated circuit in a response to said at least one of said signal input and said clock input being driven by said high precision signal source; and
(c) a processor executing at least one algorithm to determine, based on a comparison of emission signature characteristics of said collected electromagnetic energy in the RF spectrum against baseline RF emission signature characteristics, one of a genuine or a counterfeit condition of the discrete semiconductor or the at least one of the integrated circuit.
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Abstract
A system for inspecting or screening electrically powered device includes a signal generator inputting a preselected signal into the electrically powered device. There is also an antenna array positioned at a pre-determined distance above the electrically powered device. Apparatus collects RF energy emitted by the electrically powered device in response to input of said preselected signal. The signature of the collected RF energy is compared with an RF energy signature of a genuine part. The comparison determines one of a genuine or a counterfeit condition of the electrically powered device.
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Citations
41 Claims
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1. A system for inspecting or screening a discrete semiconductor or an integrated circuit for counterfeits, said system comprising:
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(a) a high precision signal source configured to generate a high precision oscillator signal for driving at least one of a signal input and a clock input of the discrete semiconductor or the integrated circuit, said high precision signal source is being selected from a group consisting of a temperature compensated Crystal Oscillator (TCXO), a microcomputer compensated Crystal Oscillator (MXCO), an Oven Controlled Crystal Oscillator (OCXO), a small atomic frequency standard oscillator and a Rubidium oscillator (RbXO); (b) a receiver coupled to an antenna and configured to collect electromagnetic energy in a radio frequency (RF) spectrum emitted by the discrete semiconductor or the integrated circuit in a response to said at least one of said signal input and said clock input being driven by said high precision signal source; and (c) a processor executing at least one algorithm to determine, based on a comparison of emission signature characteristics of said collected electromagnetic energy in the RF spectrum against baseline RF emission signature characteristics, one of a genuine or a counterfeit condition of the discrete semiconductor or the at least one of the integrated circuit.
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2. An apparatus for detecting at least one of a counterfeited integrated circuit and a counterfeited device employing the integrated circuit, said apparatus comprising:
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(a) a high precision signal source configured to generate a high precision oscillator signal for driving at least one of a signal input and a clock input of a powered at least one of the integrated circuit and the device employing the integrated circuit, said high precision oscillator signal having a frequency thereof being consistent with input requirements of the at least one of the integrated circuit and the device employing the integrated circuit; (b) an RF collection means, comprising a receiver and an antenna, positioned in a proximity to the at least one of the integrated circuit and the device employing the integrated circuit, said RF collection means configured to receive emissions radiated by the at least one of the integrated circuit and the device employing the integrated circuit driven with said high precision oscillator signal; and (c) a processor coupled to said RF collection means, said processor configured to process a signature of said radiated emission and compare said radiated emission signature against at least one emission signature predetermined for the at least one of the integrated circuit and the device employing the integrated circuit, whereby a resulting match of said comparison defines at least one of a genuine integrated circuit and a genuine device employing the integrated circuit. - View Dependent Claims (3, 4, 5, 6)
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7. A method for differentiating between a counterfeit and a genuine semiconductor based device, said method comprising the steps of:
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(a) generating, with a high precision signal source, a high precision oscillator signal, said high precision signal source is being selected from a group consisting of a temperature compensated Crystal Oscillator (TCXO), a microcomputer compensated Crystal Oscillator (MXCO), an Oven Controlled Crystal Oscillator (OCXO), a small atomic frequency standard oscillator and a Rubidium oscillator (RbXO); (b) injecting said high precision oscillator signal into a semiconductor based device through at least one of a clock input and a signal input; (c) collecting, with an RF collection means, comprising a receiver and an antenna, emissions given off by said semiconductor based device in a response to said high precision oscillator signal injected in step (b); (d) comparing characteristics of said RF emissions, collected in step (c), against baseline RF characteristics of a genuine semiconductor based device; and (e) determining, based on said comparison, said semiconductor based device as said one of said counterfeit and said genuine semiconductor based device. - View Dependent Claims (8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29)
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30. An apparatus for at least one of inspecting and screening at least one semiconductor based device installed on a printed circuit board assembly, said apparatus comprising:
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(a) a robotic arm; (b) a controller configured to control a movement of said robotic arm over different locations of the printed circuit board assembly; (c) a high precision signal source generating a high precision oscillator signal for injection into the printed circuit board assembly; (d) an antenna array including a low noise amplifier integrated therewithin; (e) a receiver connected to said antenna array, said receiver configured to receive emission radiated by said at least one semiconductor based device injected with said high precision oscillator signal; and (f) at least one processor coupled to said receiver and configured to at least one of inspect and screen the at least one semiconductor based device based on comparison of a signature of said emission received at said receiver against baseline characteristics. - View Dependent Claims (31, 32, 33, 34)
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35. A system for inspecting or screening for counterfeits of an electrical or electronic device, said system comprising:
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(a) a high precision oscillator signal source configured for inputting one and only one high precision oscillator signal into the electrical or electronic device through at least one of a signal input and a clock input, said high precision oscillator signal source is being selected from a group consisting of a temperature compensated Crystal Oscillator (TCXO), a microcomputer compensated Crystal Oscillator (MXCO), an Oven Controlled Crystal Oscillator (OCXO), a small atomic frequency standard oscillator and a Rubidium oscillator (RbXO); (b) means for collecting RF energy emitted by the electrical or electronic device in a response to said high precision oscillator signal; and (c) means for determining, based on a comparison of characteristics of said collected RF energy against baseline RF characteristics, a genuine or a counterfeit condition of the electrical or electronic device.
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36. A method for differentiating between a counterfeit and genuine semiconductor based device, said method comprising the steps of:
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(a) generating, with a high precision signal source, a high precision oscillator signal; (b) injecting said high precision oscillator signal into a semiconductor through at least one of a clock input and a signal input; (c) collecting, with an RF collection means, emissions given off by said semiconductor based device in response to said high precision oscillator signal injected in step (b); (d) comparing characteristics of said RF emissions, collected in step (c), against baseline RF characteristics of a genuine semiconductor based device; (e) determining, based on said comparison, said one of said counterfeit and genuine semiconductor based device; and (f) repeating steps (a) through (c) with different frequency settings on said high precision oscillator signal injected into at least two inputs on the semiconductor based device and comparing RF collection data for each high precision oscillator signal injected individually to expected signature and injection into all inputs simultaneously.
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37. A method for differentiating between a counterfeit and genuine semiconductor based device, said method comprising the steps of:
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establishing baseline RF characteristics representative of said genuine semiconductor based device, said establishing said baseline RF characteristics representative of said genuine semiconductor based device comprising obtaining local spectral power density statistics by sampling a plurality of semiconductor based devices and discriminating said plurality of semiconductor based devices based on localized statistical feature measured on each of emissions common between sampled semiconductor based devices generating, with a high precision signal source, a high precision oscillator signal; injecting said high precision oscillator signal into a semiconductor through at least one of a clock input and a signal input; collecting, with an RF collection means, emissions given off by said semiconductor based device in response to said high precision oscillator signal injected into said semiconductor comparing characteristics of said collected RF emissions, against said baseline RF characteristics of a genuine semiconductor based device; and determining, based on said comparison, said one of said counterfeit and genuine semiconductor based device.
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38. An apparatus for at least one of inspecting and screening at least one semiconductor based device installed on a printed circuit board assembly, said apparatus comprising:
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a robotic arm; a controller configured to control a movement of said robotic arm over different locations of the printed circuit board assembly; a high precision signal oscillator source generating a high precision oscillator signal for injection into the printed circuit board assembly; an antenna array comprising a low noise amplifier; a receiver connected to said antenna array, said receiver configured to receive emission radiated by said at least one semiconductor based device injected with said high precision oscillator signal; at least one processor coupled to said receiver and configured to at least one of inspect and screen the at least one semiconductor based device; and an active illumination source configured to illuminate the semiconductor based device that is at least one of inspected and screened with free field RF energy to enhance the emissions signature of the semiconductor based device.
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39. A method for differentiating between a counterfeit and genuine semiconductor based device, said method comprising the steps of:
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(a) generating, with a high precision signal source, a high precision oscillator signal; (b) injecting said high precision oscillator signal into a semiconductor based device through at least one of a clock input and a signal input; (c) collecting, with an RF collection means, emissions given off by said semiconductor based device in response to said high precision oscillator signal injected in step (b); (d) comparing characteristics of said RF emissions, collected in step (c), against baseline RF characteristics of a genuine semiconductor based device, where a step of establishing said baseline RF characteristics comprises a step of obtaining local spectral power density statistics by sampling a plurality of semiconductor based devices and by discriminating said plurality of semiconductor based devices based on localized statistical feature measured on each of emissions common between sampled semiconductor based devices, said statistical feature comprising at least one of Emission Frequency Location, Emission Peak Magnitude, Emission Phase Noise, Emission Symmetry, Skewness, and Emission Local Noise Floor; and (e) determining, based on said comparison, said semiconductor based device as one of said counterfeit and said genuine semiconductor based device.
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40. A method for differentiating between a counterfeit and a genuine semiconductor based device, said method comprising the steps of:
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(a) generating, with a high precision signal source, a high precision oscillator signal, said high precision signal source is being selected from a group consisting of a temperature compensated Crystal Oscillator (TCXO), a microcomputer compensated Crystal Oscillator (MXCO), an Oven Controlled Crystal Oscillator (OCXO), a small atomic frequency standard oscillator and a Rubidium oscillator (RbXO); (b) injecting said high precision oscillator signal into a semiconductor based device through at least one of a clock input and a signal input; (c) collecting, with an RF collection means, emissions given off by said semiconductor based device in response to said high precision oscillator signal injected in step (b); (d) repeating the steps (a) through (c) with identical settings on said high precision oscillator signal injected into said semiconductor based device; (e) comparing characteristics of said RF emissions, collected in step (c), against baseline RF characteristics of a genuine semiconductor based device; and (f) determining, based on said comparison, said semiconductor based device as one of said counterfeit and said genuine semiconductor based device.
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41. A method for differentiating between a counterfeit and a genuine semiconductor based device, said method comprising the steps of:
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(a) generating, with a high precision signal source, a high precision oscillator signal; (b) injecting said high precision oscillator signal into a semiconductor based device through at least one of a clock input and a signal input; (c) collecting, with an RF collection means, emissions given off by said semiconductor based device in response to said high precision oscillator signal injected in step (b); (d) repeating the steps (a) through (c) with identical settings on said high precision oscillator signal injected into said semiconductor based device; (e) comparing characteristics of said RF emissions, collected in step (c), against baseline RF characteristics of the genuine semiconductor based device; (f) determining, based on said comparison, said semiconductor based device as said one of said counterfeit and said genuine semiconductor based device; and (g) using narrow-band RF emissions for further inspection and comparison of RF emission signatures observed in wideband RF emission responses.
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Specification