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Semiconductor device

  • US 10,475,819 B2
  • Filed: 07/19/2018
  • Issued: 11/12/2019
  • Est. Priority Date: 05/16/2013
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a first insulating film comprising a first region, a second region, and a third region between the first region and the second region, wherein a thickness of the first insulating film in the third region is thicker than a thickness of the first region of the first insulating film and a thickness of the second region of the second region;

    a first oxide semiconductor film over the third region of the first insulating film;

    a second oxide semiconductor film over and in contact with the first oxide semiconductor film;

    a third oxide semiconductor film over and in contact with the second oxide semiconductor film;

    a second insulating film over the third oxide semiconductor film;

    a second gate electrode over the second insulating film and the first region and the second region of the first insulating film; and

    a first electrode and a second electrode each electrically connected to the second oxide semiconductor film,wherein a bottom surface of the second gate electrode is positioned lower than a bottom surface of the second oxide semiconductor film so that the second gate electrode faces a side surface of the second oxide semiconductor film with the second insulating film interposed therebetween.

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