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Semiconductor devices

  • US 10,475,898 B2
  • Filed: 03/28/2018
  • Issued: 11/12/2019
  • Est. Priority Date: 09/08/2017
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • first semiconductor patterns vertically stacked on a substrate and vertically spaced apart from, each other; and

    a first gate electrode on the first semiconductor patterns, the first gate electrode comprising;

    a first work function metal pattern on a top surface, a bottom surface, and sidewalls of respective ones of the first semiconductor patterns;

    a barrier pattern on the first work function metal pattern; and

    a first electrode pattern on the barrier pattern,wherein the first gate electrode has a first part between adjacent ones of the first semiconductor patterns,wherein the barrier pattern comprises a first metal nitride layer comprising silicon, andwherein the barrier pattern and the first electrode pattern are spaced apart from the first part.

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