Semiconductor devices
First Claim
1. A semiconductor device, comprising:
- first semiconductor patterns vertically stacked on a substrate and vertically spaced apart from, each other; and
a first gate electrode on the first semiconductor patterns, the first gate electrode comprising;
a first work function metal pattern on a top surface, a bottom surface, and sidewalls of respective ones of the first semiconductor patterns;
a barrier pattern on the first work function metal pattern; and
a first electrode pattern on the barrier pattern,wherein the first gate electrode has a first part between adjacent ones of the first semiconductor patterns,wherein the barrier pattern comprises a first metal nitride layer comprising silicon, andwherein the barrier pattern and the first electrode pattern are spaced apart from the first part.
1 Assignment
0 Petitions
Accused Products
Abstract
A semiconductor device includes first semiconductor patterns vertically stacked on a substrate and vertically spaced apart from each other, and a first gate electrode on the first semiconductor patterns. The first gate electrode comprises a first work function metal pattern on a top surface, a bottom surface, and sidewalls of respective ones of the first semiconductor patterns, a barrier pattern on the first work function metal pattern, and a first electrode pattern on the barrier pattern. The first gate electrode has a first part between adjacent ones of the first semiconductor patterns. The barrier pattern comprises a silicon-containing metal nitride layer. The barrier pattern and the first electrode pattern are spaced apart from the first part.
-
Citations
20 Claims
-
1. A semiconductor device, comprising:
-
first semiconductor patterns vertically stacked on a substrate and vertically spaced apart from, each other; and a first gate electrode on the first semiconductor patterns, the first gate electrode comprising; a first work function metal pattern on a top surface, a bottom surface, and sidewalls of respective ones of the first semiconductor patterns; a barrier pattern on the first work function metal pattern; and a first electrode pattern on the barrier pattern, wherein the first gate electrode has a first part between adjacent ones of the first semiconductor patterns, wherein the barrier pattern comprises a first metal nitride layer comprising silicon, and wherein the barrier pattern and the first electrode pattern are spaced apart from the first part. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
-
-
12. A semiconductor device, comprising a first transistor and a second transistor on a substrate, each of the first and second transistors comprising:
-
semiconductor patterns vertically stacked on the substrate and vertically spaced apart from each other; and a gate electrode on the semiconductor patterns, wherein the gate electrode of the first transistor comprises a first work function metal pattern and a first electrode pattern that are sequentially stacked on an uppermost one of the semiconductor patterns of the first transistor, wherein the gate electrode of the second transistor comprises a second work function metal pattern, a barrier pattern, and a second electrode pattern that are sequentially stacked on an uppermost one of the semiconductor patterns of the second transistor, and wherein the first electrode pattern covers the first work function metal pattern. - View Dependent Claims (13, 14, 15, 16)
-
-
17. A semiconductor device, comprising:
-
first semiconductor patterns vertically stacked on a substrate; second semiconductor patterns vertically stacked on the substrate; a first gate electrode on the first semiconductor patterns; and a second gate electrode on the second semiconductor patterns, wherein the first gate electrode comprises; a first work function metal pattern within a space between adjacent ones of the first semiconductor patterns and on a top surface, a bottom surface, and sidewalls of respective ones of the first semiconductor patterns; and a first electrode pattern on the first work function metal pattern, and wherein the second gate electrode comprises; a second work function metal pattern within a space between adjacent ones of the second semiconductor patterns and on a top surface, a bottom surface, and sidewalls of respective ones of the second semiconductor patterns; a second electrode pattern on the second work function metal pattern; and a barrier pattern between the second work function metal pattern and the second electrode pattern, wherein the first work function metal pattern comprises a silicon-containing first metal nitride layer, wherein the second work function metal pattern comprises a second metal nitride layer, wherein the barrier pattern comprises a silicon-containing third metal nitride layer, and wherein the barrier pattern comprises a silicon concentration greater than that of the first work function metal pattern. - View Dependent Claims (18, 19, 20)
-
Specification