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Solid-state imaging sensor and solid-state imaging device

  • US 10,477,133 B2
  • Filed: 10/02/2017
  • Issued: 11/12/2019
  • Est. Priority Date: 10/02/2017
  • Status: Active Grant
First Claim
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1. A solid-state image sensor comprising:

  • a selection signal terminal configured to receive a selection signal designated by a pixel address in a two-dimensionally arranged pixel array, wherein the selection signal includes a horizontal address signal and a vertical address signal;

    a photoelectric conversion section configured to generate a charge in accordance with incident light and store the charge in accordance with the selection signal;

    a charge retention section configured to retain the charge stored in the photoelectric conversion section at a prescribed timing; and

    a charge release section configured to release the charge stored in the photoelectric conversion section when the horizontal address signal and the vertical address signal are both effective, wherein the charge release section includes a first transistor and a second transistor connected in series between a power source and the photoelectric conversion section, wherein the first transistor has the horizontal address signal applied thereto and conducts when the horizontal address signal is effective and wherein the second transistor has the vertical address signal applied thereto and conducts when the vertical address signal is effective.

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