Film deposition method
First Claim
1. A film deposition method for filling a recessed pattern formed in a surface of a substrate with a SiN film, comprising steps of:
- causing NH2 groups to adsorb on a surface of a substrate containing a recessed pattern formed in a top surface of the substrate by supplying a first process gas containing NH3 converted to first plasma to the surface of the substrate containing the recessed pattern;
partially converting the NH2 groups to N groups by supplying a second process gas containing N2 converted to second plasma to the surface of the substrate containing the recessed pattern on which the NH2 groups is adsorbed; and
causing a silicon-containing gas to adsorb on the NH2 groups by supplying the silicon-containing gas to the surface of the substrate containing the recessed pattern on which the NH2 groups and the N groups are adsorbed; and
cyclically repeating the steps of causing the NH2 groups to adsorb on the surface of the substrate, partially converting the NH2 groups to the N groups and causing the silicon-containing gas to adsorb on the NH2 groups,wherein the first plasma is generated at a first height higher and more distant from the top surface of the substrate than a second height at which the second plasma is generated, the first height being set at a height that causes the first plasma containing NH3 to reach a bottom of the recessed pattern, the second height being set at a height that causes the second plasma containing N2 to reach only an upper portion of the recessed pattern and the top surface of the substrate.
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Accused Products
Abstract
A film deposition method for filling a recessed pattern with a SiN film is provided. NH2 groups are caused to adsorb on a surface of a substrate containing a recessed pattern formed in a top surface of the substrate by supplying a first process gas containing NH3 converted to first plasma to the surface of the substrate containing the recessed pattern. The NH2 groups is partially converted to N groups by supplying a second process gas containing N2 converted to second plasma to the surface of the substrate containing the recessed pattern on which the NH2 groups is adsorbed. A silicon-containing gas is caused to adsorb on the NH2 groups by supplying the silicon-containing gas to the surface of the substrate containing the recessed pattern on which the NH2 groups and the N groups are adsorbed. The above steps are cyclically repeated.
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Citations
10 Claims
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1. A film deposition method for filling a recessed pattern formed in a surface of a substrate with a SiN film, comprising steps of:
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causing NH2 groups to adsorb on a surface of a substrate containing a recessed pattern formed in a top surface of the substrate by supplying a first process gas containing NH3 converted to first plasma to the surface of the substrate containing the recessed pattern; partially converting the NH2 groups to N groups by supplying a second process gas containing N2 converted to second plasma to the surface of the substrate containing the recessed pattern on which the NH2 groups is adsorbed; and causing a silicon-containing gas to adsorb on the NH2 groups by supplying the silicon-containing gas to the surface of the substrate containing the recessed pattern on which the NH2 groups and the N groups are adsorbed; and cyclically repeating the steps of causing the NH2 groups to adsorb on the surface of the substrate, partially converting the NH2 groups to the N groups and causing the silicon-containing gas to adsorb on the NH2 groups, wherein the first plasma is generated at a first height higher and more distant from the top surface of the substrate than a second height at which the second plasma is generated, the first height being set at a height that causes the first plasma containing NH3 to reach a bottom of the recessed pattern, the second height being set at a height that causes the second plasma containing N2 to reach only an upper portion of the recessed pattern and the top surface of the substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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Specification