Restricted capacitor switching

• US 10,483,090 B2
• Filed: 07/09/2018
• Issued: 11/19/2019
• Est. Priority Date: 07/10/2017
• Status: Active Grant

• Current Assignee: ASM America Incorporated (ASM International NV)
• Original Assignee: Reno Technologies Inc.
• Inventors: Bhutta, Imran Ahmed, Lozic, Tomislav
• Primary Examiner(s): Jones, Stephen E.
• Application Number:
  US16/029,742
• Publication Number:
  US 20190013183A1
• Time in Patent Office: 498 Days
• Field of Search: 333 173, 333 32, 333 33, 333 99 PL
• CPC Class Codes: H01J 2237/24564 Measurements of electric or magnetic variables, e.g. voltage, current, frequency
• CPC Class Codes: H01J 2237/332 Coating
• CPC Class Codes: H01J 2237/334 Etching
• CPC Class Codes: H01J 37/32183 Matching circuits
• CPC Class Codes: H01L 21/67069 for drying etching
• CPC Class Codes: H03H 11/28 Impedance matching networks
• CPC Class Codes: H03H 7/40 Automatic matching of load impedance to source impedance

Abstract

In one embodiment, the present disclosure is directed to a method for matching an impedance. The method can include determining or receiving a reflection parameter value at an RF input or output; stopping the altering of a first capacitance and a second capacitance when the reflection parameter value is at or below a first reflection value; causing a limited altering of the first capacitance and the second capacitance to pursue an impedance match when the reflection parameter value is at or above a second reflection value and at or below the third reflection value; and causing an unlimited altering of the first capacitance and the second capacitance to pursue an impedance match when the reflection parameter value is at or above a third reflection value.

Claims

1. An impedance matching network, the network comprising:

a radio frequency (RF) input configured to operably couple to an RF source;

an RF output configured to operably couple to a plasma chamber;

a first electronically variable capacitor (EVC) comprising discrete capacitors configured to be switched in and out to alter a first capacitance of the first EVC;

a second EVC comprising discrete capacitors configured to be switched in and out to alter a second capacitance of the second EVC; and

a control circuit operably coupled to the first and second EVCs, the control circuit configured to;

determine or receive a reflection parameter value at the RF input or the RF output;

stop the altering of the first capacitance and the second capacitance when the reflection parameter value is at or below a first reflection value;

cause a limited altering of the first capacitance and the second capacitance to pursue an impedance match when the reflection parameter value is (a) at or above a second reflection value and (b) at or below the third reflection value, the limited altering allowing only a predetermined number of predetermined discrete capacitors to switch in or out; and

cause an unlimited altering of the first capacitance and the second capacitance to pursue an impedance match when the reflection parameter value is at or above a third reflection value, the unlimited altering allowing any discrete capacitor of the first or second EVC to switch in or out.

2. The matching network of claim 1 wherein the reflection parameter value is a load impedance at the RF output.

3. The matching network of claim 1 wherein the control circuit is further configured to continuously monitor the reflection parameter value.

4. The matching network of claim 1 wherein the discrete capacitors of each of the first EVC and the second EVC comprise coarse and fine capacitors, wherein the coarse capacitors have a capacitance at least twice as large as the capacitance of the fine capacitors, and wherein the predetermined discrete capacitors are fine capacitors.

5. The matching network of claim 4 wherein the predetermined number is two.

6. The matching network of claim 1 wherein the reflection parameter value is a reflection coefficient value representing a ratio of an amplitude of a reflected wave to an incident wave at the RF input or the RF output.

7. The matching network of claim 6 wherein the reflection coefficient value is determined based on a sensor signal from a sensor at the RF input.

8. The matching network of claim 1 wherein the control circuit is further configured to, before altering the first capacitance or the second capacitance, determine a positioning for the discrete capacitors to achieve an impedance match, the limited altering preventing the determined positioning of the discrete capacitors from being fully carried out.

9. The matching network of claim 8 wherein the unlimited altering allows the determined positioning of the discrete capacitors to be fully carried out.

10. A semiconductor processing tool comprising:

a plasma chamber configured to deposit a material onto a substrate or etch a material from the substrate; and

an impedance matching network operably coupled to the plasma chamber, the matching network comprising;

a radio frequency (RF) input configured to operably couple to an RF source;

an RF output configured to operably couple to the plasma chamber;

a first electronically variable capacitor (EVC) comprising discrete capacitors configured to be switched in and out to alter a first capacitance of the first EVC;

a second EVC comprising discrete capacitors configured to be switched in and out to alter a second capacitance of the second EVC; and

a control circuit operably coupled to the first and second EVCs, the control circuit configured to;

determine or receive a reflection parameter value at the RF input or the RF output;

stop the altering of the first capacitance and the second capacitance when the reflection parameter value is at or below a first reflection value;

cause a limited altering of the first capacitance and the second capacitance to pursue an impedance match when the reflection parameter value is (a) at or above a second reflection value and (b) at or below the third reflection value, the limited altering allowing only a predetermined number of predetermined discrete capacitors to switch in or out; and

cause an unlimited altering of the first capacitance and the second capacitance to pursue an impedance match when the reflection parameter value is at or above a third reflection value, the unlimited altering allowing any discrete capacitor of the first or second EVC to switch in or out.

11. The processing tool of claim 10 wherein the discrete capacitors of each of the first EVC and the second EVC comprise coarse and fine capacitors, wherein the coarse capacitors have a capacitance at least twice as large as the capacitance of the fine capacitors, and wherein the predetermined discrete capacitors are fine capacitors.

12. The processing tool of claim 10 wherein the reflection parameter value is a reflection coefficient value representing a ratio of an amplitude of a reflected wave to an incident wave at the RF input or the RF output.

13. The processing tool of claim 10 wherein the reflection parameter value is a load impedance at the RF output.

14. The processing tool of claim 10 wherein the control circuit is further configured to, before altering the first capacitance or the second capacitance, determine a positioning for the discrete capacitors to achieve an impedance match, the limited altering preventing the determined positioning of the discrete capacitors from being fully carried out.

15. A method of matching an impedance comprising:

operably coupling a radio frequency (RF) input of a matching network to an RF source;

operably coupling an RF output of the matching network to a plasma chamber, the plasma chamber comprising (a) a first electronically variable capacitor (EVC) comprising discrete capacitors configured to be switched in and out to alter a first capacitance of the first EVC, and (b) a second EVC comprising discrete capacitors configured to be switched in and out to alter a second capacitance of the second EVC; and

determining or receiving a reflection parameter value at the RF input or the RF output;

stopping the altering of the first capacitance and the second capacitance when the reflection parameter value is at or below a first reflection value;

causing a limited altering of the first capacitance and the second capacitance to pursue an impedance match when the reflection parameter value is (a) at or above a second reflection value and (b) at or below the third reflection value, the limited altering allowing only a predetermined number of predetermined discrete capacitors to switch in or out; and

causing an unlimited altering of the first capacitance and the second capacitance to pursue an impedance match when the reflection parameter value is at or above a third reflection value, the unlimited altering allowing any discrete capacitor of the first or second EVC to switch in or out.

16. The method of claim 15 wherein the discrete capacitors of each of the first EVC and the second EVC comprise coarse and fine capacitors, wherein the coarse capacitors have a capacitance at least twice as large as the capacitance of the fine capacitors, and wherein the predetermined discrete capacitors are fine capacitors.

17. The method of claim 15 wherein the reflection parameter value is a reflection coefficient value representing a ratio of an amplitude of a reflected wave to an incident wave at the RF input or the RF output.

18. The method of claim 15 wherein the reflection parameter value is a load impedance at the RF output.

19. The method of claim 15 further comprising, before altering the first capacitance or the second capacitance, determining a positioning for the discrete capacitors to achieve an impedance match, the limited altering preventing the determined positioning of the discrete capacitors from being fully carried out.

20. A method of manufacturing a semiconductor, the method comprising:

placing a substrate in a plasma chamber configured to deposit a material layer onto the substrate or etch a material layer from the substrate; and

coupling an impedance matching circuit between a radio frequency (RF) source and the plasma chamber, the impedance matching circuit comprising;

a radio frequency (RF) input configured to operably couple to an RF source;

an RF output configured to operably couple to a plasma chamber;

a first electronically variable capacitor (EVC) comprising discrete capacitors configured to be switched in and out to alter a first capacitance of the first EVC;

a second EVC comprising discrete capacitors configured to be switched in and out to alter a second capacitance of the second EVC; and

a control circuit operably coupled to the first and second EVCs, the control circuit configured to;

determine or receive a reflection parameter value at the RF input or the RF output;

stop the altering of the first capacitance and the second capacitance when the reflection parameter value is at or below a first reflection value;

cause a limited altering of the first capacitance and the second capacitance to pursue an impedance match when the reflection parameter value is (a) at or above a second reflection value and (b) at or below the third reflection value, the limited altering allowing only a predetermined number of predetermined discrete capacitors to switch in or out; and

cause an unlimited altering of the first capacitance and the second capacitance to pursue an impedance match when the reflection parameter value is at or above a third reflection value, the unlimited altering allowing any discrete capacitor of the first or second EVC to switch in or out.