Light-emitting device and electronic device using the same

• US 10,483,288 B2
• Filed: 12/06/2018
• Issued: 11/19/2019
• Est. Priority Date: 07/10/2008
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Seo, Satoshi, Hatano, Kaoru
• Primary Examiner(s): Quarterman, Kevin
• Application Number:
  US16/211,658
• Publication Number:
  US 20190115372A1
• Time in Patent Office: 348 Days
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1218 with a particular composition or structure of the substrate
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/1266 the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 33/507 the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
• CPC Class Codes: H01L 33/58 Optical field-shaping elements
• CPC Class Codes: H10K 2102/311 Flexible OLED
• CPC Class Codes: H10K 50/125 specially adapted for multicolour light emission, e.g. for emitting white light
• CPC Class Codes: H10K 50/13 comprising stacked EL layers within one EL unit
• CPC Class Codes: H10K 50/80 Constructional details
• CPC Class Codes: H10K 59/1201 Manufacture or treatment
• CPC Class Codes: H10K 59/124 Insulating layers formed between TFT elements and OLED elements
• CPC Class Codes: H10K 59/38 comprising colour filters or colour changing media [CCM]
• CPC Class Codes: H10K 71/80 using temporary substrates
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product

Abstract

A lightweight flexible light-emitting device which is able to possess a curved display portion and display a full color image with high resolution and the manufacturing process thereof are disclosed. The light-emitting device comprises: a plastic substrate; an insulating layer with an adhesive interposed therebetween; a thin film transistor over the insulating layer; a protective insulating film over the thin film transistor; a color filter over the protective insulating film; an interlayer insulating film over the color filter; and a white-emissive light-emitting element formed over the interlayer insulating film and being electrically connected to the thin film transistor.

Claims

1. A light-emitting device comprising:

a substrate;

an oxide semiconductor over the substrate, the oxide semiconductor comprising indium, zinc, and gallium;

a gate electrode over the oxide semiconductor;

a first insulating film over the gate electrode, the first insulating film comprising an inorganic insulating material;

a source electrode and a drain electrode over the first insulating film, the source electrode and the drain electrode each comprising a region in contact with the oxide semiconductor;

a color filter over the first insulating film;

a light-emitting element over the color filter, the light-emitting element electrically connected to one of the source electrode and the drain electrode; and

an organic resin over the light-emitting element,

wherein the color filter is positioned between the first insulating film and the light-emitting element,

wherein the color filter comprises a region overlapping with the light-emitting element,

wherein the color filter does not overlap with the oxide semiconductor and the gate electrode,

wherein the light-emitting element comprises;

a first electrode;

a second electrode over the first electrode;

a charge generation layer between the first electrode and the second electrode;

a first light-emitting layer between the first electrode and the charge generation layer;

a second light-emitting layer between the charge generation layer and the second electrode; and

a third light-emitting layer between the charge generation layer and the second electrode,

wherein the first light-emitting layer comprises a blue-emissive fluorescent substance,

wherein the second light-emitting layer comprises a first phosphorescent substance,

wherein the first phosphorescent substance is a red-emissive phosphorescent substance,

wherein the third light-emitting layer comprises a second phosphorescent substance and overlaps with the second light-emitting layer, and

wherein the first electrode is positioned over the one of the source electrode and the drain electrode.

2. The light-emitting device according to claim 1, wherein the first insulating film is a silicon oxide film.

3. A television device comprising the light-emitting device according to claim 1.

4. The light-emitting device according to claim 1, wherein the oxide semiconductor is a microcrystalline semiconductor.

5. A light-emitting device comprising:

a substrate;

an oxide semiconductor over the substrate, the oxide semiconductor comprising indium, zinc, and gallium;

a gate electrode over the oxide semiconductor;

a first insulating film over the gate electrode, the first insulating film comprising an inorganic insulating material;

a source electrode and a drain electrode over the first insulating film, the source electrode and the drain electrode each comprising a region in contact with the oxide semiconductor;

a light-emitting element over the first insulating film, the light-emitting element electrically connected to one of the source electrode and the drain electrode; and

an organic resin over the light-emitting element,

wherein the light-emitting element comprises;

an anode;

a first light-emitting layer over the anode;

a second light-emitting layer over the first light-emitting layer;

a third light-emitting layer over the second light-emitting layer;

a fourth light-emitting layer over the third light-emitting layer; and

a cathode over the fourth light-emitting layer,

wherein the first light-emitting layer, the second light-emitting layer, the third light-emitting layer, and the fourth light-emitting layer overlap with each other,

wherein the first light-emitting layer comprises a first light-emitting substance,

wherein the second light-emitting layer comprises a second light-emitting substance,

wherein the third light-emitting layer comprises a third light-emitting substance,

wherein the fourth light-emitting layer comprises a fourth light-emitting substance,

wherein each of the first light-emitting substance and the fourth light-emitting substance is configured to emit blue light having a shorter wavelength than a wavelength of each of the second light-emitting substance and the third light-emitting substance,

wherein the first light-emitting substance is the same as the fourth light-emitting substance,

wherein the second light-emitting substance is configured to emit red light, and

wherein the anode is positioned over the one of the source electrode and the drain electrode.

6. A television device comprising the light-emitting device according to claim 5.

7. The light-emitting device according to claim 5, wherein the oxide semiconductor is a microcrystalline semiconductor.

8. A light-emitting device comprising:

a substrate;

an oxide semiconductor over the substrate, the oxide semiconductor comprising indium, zinc, and gallium;

a gate electrode over the oxide semiconductor;

a first insulating film over the gate electrode, the first insulating film comprising an inorganic insulating material;

a source electrode and a drain electrode over the first insulating film, the source electrode and the drain electrode each comprising a region in contact with the oxide semiconductor;

a color filter over the first insulating film; and

a light-emitting element over the color filter, the light-emitting element electrically connected to one of the source electrode and the drain electrode,

wherein the color filter is positioned between the first insulating film and the light-emitting element,

wherein the color filter comprises a region overlapping with the light-emitting element,

wherein the color filter does not overlap with the oxide semiconductor and the gate electrode,

wherein the light-emitting element comprises;

an anode;

a first light-emitting layer over the anode;

a second light-emitting layer over the first light-emitting layer;

a third light-emitting layer over the second light-emitting layer;

a fourth light-emitting layer over the third light-emitting layer; and

a cathode over the fourth light-emitting layer.

wherein the first light-emitting layer, the second light-emitting layer, the third light-emitting layer, and the fourth light-emitting layer overlap with each other,

wherein the first light-emitting layer comprises a first light-emitting substance,

wherein the second light-emitting layer comprises a second light-emitting substance,

wherein the third light-emitting layer comprises a third light-emitting substance,

wherein the fourth light-emitting layer comprises a fourth light-emitting substance,

wherein each of the first light-emitting substance and the fourth light-emitting substance is configured to emit blue light having a shorter wavelength than a wavelength of each of the second light-emitting substance and the third light-emitting substance,

wherein the first light-emitting substance is the same as the fourth light-emitting substance, and

wherein the second light-emitting substance is configured to emit red light.

9. A television device comprising the light-emitting device according to claim 8.

10. The light-emitting device according to claim 8, wherein the oxide semiconductor is a microcrystalline semiconductor.

11. A light-emitting device comprising:

a substrate;

an oxide semiconductor over the substrate, the oxide semiconductor comprising indium, zinc, and gallium;

a gate electrode over the oxide semiconductor;

a first insulating film over the gate electrode;

a source electrode and a drain electrode over the first insulating film, the source electrode and the drain electrode each comprising a region in contact with the oxide semiconductor;

a color filter over the first insulating film;

a second insulating film over the color filter; and

a light-emitting element over the second insulating film, the light-emitting element electrically connected to the oxide semiconductor,

wherein the first insulating film comprises a region in contact with the second insulating film,

wherein the color filter comprises a region overlapping with the light-emitting element,

wherein the color filter does not overlap with the oxide semiconductor and the gate electrode,

wherein the light-emitting element comprises;

an anode;

a first light-emitting layer over the anode;

a second light-emitting layer over the first light-emitting layer;

a third light-emitting layer over the second light-emitting layer;

a fourth light-emitting layer over the third light-emitting layer; and

a cathode over the fourth light-emitting layer,

wherein the first light-emitting layer, the second light-emitting layer, the third light- emitting layer, and the fourth light-emitting layer overlap with each other,

wherein the first light-emitting layer comprises a first light-emitting substance and a first host material,

wherein the second light-emitting layer comprises a second light-emitting substance and a second host material,

wherein the third light-emitting layer comprises a third light-emitting substance and a third host material,

wherein the fourth light-emitting layer comprises a fourth light-emitting substance and a fourth host material,

wherein each of the first light-emitting substance and the fourth light-emitting substance is configured to emit blue light having a shorter wavelength than a wavelength of each of the second light-emitting substance and the third light-emitting substance,

wherein the light-emitting element is configured to emit white light,

wherein the first light-emitting substance is the same as the fourth light-emitting substance,

wherein the first light-emitting substance is different from the second light- emitting substance and the third light-emitting substance, and

wherein the first host material is different from the second host material and the third host material.

12. A television device comprising the light-emitting device according to claim 11.

13. A light-emitting device comprising:

a substrate;

a first light-emitting element, a second light-emitting element, a third light-emitting element, and a fourth light-emitting element; and

a first color filter, a second color filter, and a third color filter,

wherein each of the first light-emitting element, the second light-emitting element, the third light-emitting element, and the fourth light-emitting element is configured to emit white light,

wherein the first color filter is configured to transmit red light and comprises a region overlapping with the first light-emitting element,

wherein the second color filter is configured to transmit green light and comprises a region overlapping with the second light-emitting element,

wherein the third color filter is configured to transmit blue light and comprises a region overlapping with the third light-emitting element,

wherein the fourth light-emitting element does not overlap with any color filters,

wherein each of the first light-emitting element, the second light-emitting element, the third light-emitting element and the fourth light-emitting element is electrically connected to a transistor comprising an oxide semiconductor and a gate electrode,

wherein the oxide semiconductor comprises indium, zinc, and gallium,

wherein the oxide semiconductor comprises a region overlapping with the gate electrode,

wherein each of the first color filter, the second color filter, and the third color filter does not overlap with the oxide semiconductor and the gate electrode,

wherein each of the first light-emitting element, the second light-emitting element, the third light-emitting element, and the fourth light-emitting element comprises;

an anode;

a first light-emitting layer over the anode;

a second light-emitting layer over the first light-emitting layer;

a third light-emitting layer over the second light-emitting layer;

a fourth light-emitting layer over the third light-emitting layer; and

a cathode over the fourth light-emitting layer,

wherein the first light-emitting layer, the second light-emitting layer, the third light- emitting layer, and the fourth light-emitting layer overlap with each other,

wherein the first light-emitting layer comprises a first light-emitting substance and a first host material,

wherein the second light-emitting layer comprises a second light-emitting substance and a second host material,

wherein the third light-emitting layer comprises a third light-emitting substance and a third host material,

wherein the fourth light-emitting layer comprises a fourth light-emitting substance and a fourth host material,

wherein each of the first light-emitting substance and the fourth light-emitting substance is configured to emit blue light having a shorter wavelength than a wavelength of each of the second light-emitting substance and the third light-emitting substance,

wherein the first light-emitting substance is the same as the fourth light-emitting substance,

wherein the first light-emitting substance is different from the second light- emitting substance and the third light-emitting substance, and

wherein the first host material is different from the second host material and the third host material.

14. A television device comprising the light-emitting device according to claim 13.