Semiconductor device comprising resistor comprising metal oxide

• US 10,483,295 B2
• Filed: 01/09/2018
• Issued: 11/19/2019
• Est. Priority Date: 09/25/2013
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei, Koezuka, Junichi, Okazaki, Kenichi, Hosaka, Yasuharu
• Primary Examiner(s): Huber, Robert T
• Application Number:
  US15/865,567
• Publication Number:
  US 20180151604A1
• Time in Patent Office: 679 Days
• Field of Search: 257 43, 257306, 257350, 257E27111
• CPC Class Codes: H01L 27/1222 with a particular composition, shape or crystalline structure of the active layer
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors

Abstract

An oxide semiconductor film with a low density of defect states is formed. In addition, an oxide semiconductor film with a low impurity concentration is formed. Electrical characteristics of a semiconductor device or the like using an oxide semiconductor film is improved. A semiconductor device including a capacitor, a resistor, or a transistor having a metal oxide film that includes a region; with a transmission electron diffraction measurement apparatus, a diffraction pattern with luminescent spots indicating alignment is observed in 70% or more and less than 100% of the region when an observation area is changed one-dimensionally within a range of 300 nm.

Claims

1. A semiconductor device comprising:

a resistor comprising a metal oxide film over an insulating surface and a nitride insulating film in contact with the metal oxide film,

wherein when a region in the metal oxide film is observed with a transmission electron diffraction measurement apparatus while changing an observation area one-dimensionally within a range of 300 nm, a diffraction pattern with luminescent spots indicating alignment is observed in 80% or more and less than 100% of the region,

wherein the metal oxide film is a stack of an In-M-Zn oxide film and an In—

N—

Zn oxide film, M and N being each Al, Ti, Ga, Y, Zr, Sn, La, Ce, or Nd,

wherein the In-M-Zn oxide film is on and in direct contact with the In—

N—

Zn oxide film, and

wherein the proportion of M atoms in the In-M-Zn oxide film is higher than the proportion of N atoms in the In—

N—

Zn oxide film.

2. The semiconductor device according to claim 1,

wherein the metal oxide film comprises a plurality of crystal parts,

wherein c-axis alignment is found in the plurality of crystal parts, and

wherein c-axes in the plurality of crystal parts are aligned in a direction parallel to a normal vector of a top surface of the metal oxide film.

3. The semiconductor device according to claim 1,

wherein the metal oxide film comprises a plurality of crystal parts,

wherein a-axes are not aligned in the plurality of crystal parts in the metal oxide film, and

wherein b-axes are not aligned in the plurality of crystal parts in the metal oxide film.

4. The semiconductor device according to claim 1, further comprising a transistor,

wherein the transistor comprises:

a gate electrode over the insulating surface;

an oxide semiconductor film at least partly overlapping with the gate electrode;

a gate insulating film between the gate electrode and the oxide semiconductor film;

a pair of electrodes in contact with the oxide semiconductor film;

an oxide insulating film at least partly overlapping with the pair of electrodes; and

the nitride insulating film in contact with the oxide insulating film.

5. The semiconductor device according to claim 1, wherein the nitride insulating film is formed of silicon nitride, a silicon nitride oxide, an aluminum nitride, or an aluminum nitride oxide.

6. A semiconductor device comprising:

a resistor comprising a metal oxide film over an insulating surface and a nitride insulating film over the metal oxide film,

wherein when a region in the metal oxide film is observed with a transmission electron diffraction measurement apparatus while changing an observation area one-dimensionally within a range of 300 nm, a diffraction pattern with luminescent spots indicating alignment is observed in 80% or more and less than 100% of the region,

wherein the metal oxide film is a stack of an In-M-Zn oxide film and an In—

N—

Zn oxide film, M and N being each Al, Ti, Ga, Y, Zr, Sn, La, Ce, or Nd,

wherein the In-M-Zn oxide film is on and in direct contact with the In—

N—

Zn oxide film, and

wherein the proportion of M atoms in the In-M-Zn oxide film is higher than the proportion of N atoms in the In—

N—

Zn oxide film.

7. The semiconductor device according to claim 6,

wherein the metal oxide film comprises a plurality of crystal parts,

wherein c-axis alignment is found in the plurality of crystal parts, and

wherein c-axes in the plurality of crystal parts are aligned in a direction parallel to a normal vector of a top surface of the metal oxide film.

8. The semiconductor device according to claim 6,

wherein the metal oxide film comprises a plurality of crystal parts,

wherein a-axes are not aligned in the plurality of crystal parts in the metal oxide film, and

wherein b-axes are not aligned in the plurality of crystal parts in the metal oxide film.

9. The semiconductor device according to claim 6, further comprising a transistor,

wherein the transistor comprises:

a gate electrode over the insulating surface;

an oxide semiconductor film at least partly overlapping with the gate electrode;

a gate insulating film between the gate electrode and the oxide semiconductor film;

a pair of electrodes in contact with the oxide semiconductor film;

an oxide insulating film at least partly overlapping with the pair of electrodes; and

the nitride insulating film in contact with the oxide insulating film.

10. The semiconductor device according to claim 6, wherein the nitride insulating film is formed of silicon nitride, a silicon nitride oxide, an aluminum nitride, or an aluminum nitride oxide.