Display apparatus and manufacturing method thereof
First Claim
1. A manufacturing method of a display apparatus, comprising:
- forming a light-emitting diode body on a substrate, wherein a method of forming the light-emitting diode body comprises;
forming a first conductivity type semiconductor material layer, an active material layer, and a second conductivity type semiconductor material layer on the substrate in order;
forming a first patterned photoresist layer on the second conductivity type semiconductor material layer, wherein the first patterned photoresist layer is formed by a half tone process;
performing a reflow process on the first patterned photoresist layer; and
removing a portion of the first conductivity type semiconductor material layer, a portion of the active material layer, and a portion of the second conductivity type semiconductor material layer using the reflowed first patterned photoresist layer as a mask to form a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer; and
forming a reflective structure on a sidewall of the light-emitting diode body, wherein a method of forming the reflective structure comprises;
forming a first material layer and a second material layer on the light-emitting diode body in order;
performing a first etching process on the second material layer using a second patterned photoresist layer as a mask; and
performing a second etching process on the first material layer using the second patterned photoresist layer as a mask.
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Accused Products
Abstract
A display apparatus is provided. The display apparatus includes a substrate, a transistor, a metal layer, and a light-emitting diode. The transistor is disposed on the substrate. The metal layer is disposed on the transistor and electrically connected to the transistor, wherein a first distance is between the upper surface of the metal layer and the substrate in a direction perpendicular to the substrate. The light-emitting diode is disposed on the metal layer, wherein the light-emitting diode includes a light-emitting diode body and an electrode, the light-emitting diode body is electrically connected to the metal layer via the electrode, the light-emitting diode body has a first surface and a second surface opposite to the first surface, the first surface and the second surface are parallel to the substrate, and in the direction above, a second distance is between the first surface and the second surface, wherein the ratio of the second distance to the first distance is greater than or equal to 0.25 and less than or equal to 6.
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Citations
10 Claims
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1. A manufacturing method of a display apparatus, comprising:
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forming a light-emitting diode body on a substrate, wherein a method of forming the light-emitting diode body comprises; forming a first conductivity type semiconductor material layer, an active material layer, and a second conductivity type semiconductor material layer on the substrate in order; forming a first patterned photoresist layer on the second conductivity type semiconductor material layer, wherein the first patterned photoresist layer is formed by a half tone process; performing a reflow process on the first patterned photoresist layer; and removing a portion of the first conductivity type semiconductor material layer, a portion of the active material layer, and a portion of the second conductivity type semiconductor material layer using the reflowed first patterned photoresist layer as a mask to form a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer; and forming a reflective structure on a sidewall of the light-emitting diode body, wherein a method of forming the reflective structure comprises; forming a first material layer and a second material layer on the light-emitting diode body in order; performing a first etching process on the second material layer using a second patterned photoresist layer as a mask; and performing a second etching process on the first material layer using the second patterned photoresist layer as a mask. - View Dependent Claims (2, 3, 4, 5)
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6. A manufacturing method of a display apparatus, comprising:
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forming a light-emitting diode body on a substrate, wherein a method of forming the light-emitting diode body comprises; forming a first conductivity type semiconductor material layer, an active material layer, and a second conductivity type semiconductor material layer on the substrate in order; forming a first patterned photoresist layer on the second conductivity type semiconductor material layer, wherein the first patterned photoresist layer is formed by a half tone process; performing a reflow process on the first patterned photoresist layer; and removing a portion of the first conductivity type semiconductor material layer, a portion of the active material layer, and a portion of the second conductivity type semiconductor material layer using the reflowed first patterned photoresist layer as a mask to form a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer; and forming a reflective structure on a sidewall of the light-emitting diode body, wherein the manufacturing method further comprises forming a first electrode on the second conductivity type semiconductor material layer before the light-emitting diode body is formed, wherein the first patterned photoresist layer covers the first electrode. - View Dependent Claims (7, 8, 9, 10)
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Specification