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Systems and methods for material breakthrough

  • US 10,490,406 B2
  • Filed: 04/10/2018
  • Issued: 11/26/2019
  • Est. Priority Date: 04/10/2018
  • Status: Active Grant
First Claim
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1. An etching method comprising:

  • forming a treatment gas plasma within a processing region of a semiconductor processing chamber;

    modifying a surface of a first material on a semiconductor substrate within the processing region of the semiconductor processing chamber with effluents of the treatment gas plasma;

    modifying a surface of a second material on the semiconductor substrate with the effluents of the treatment gas plasma;

    forming a remote plasma from a fluorine-containing precursor to produce fluorine-containing plasma effluents;

    flowing the fluorine-containing plasma effluents to the processing region of the semiconductor processing chamber;

    flowing water vapor to the processing region of the semiconductor processing chamber; and

    selectively removing the modified surface of the first material from the semiconductor substrate.

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