Selective growth of silicon nitride
First Claim
1. A method of depositing silicon nitride on a semiconductor substrate, the method comprising:
- providing the semiconductor substrate having a blocked surface and an unblocked surface, the blocked surface comprising an organic moiety having an Si—
C bond; and
selectively depositing silicon nitride on the unblocked surface by one or more thermal atomic layer deposition cycles, each cycle comprising;
exposing the semiconductor substrate having the blocked and unblocked surfaces to a silicon-containing precursor to adsorb the silicon-containing precursor to the unblocked surface; and
exposing the semiconductor substrate to a nitrogen-containing reactant without igniting a plasma to form silicon nitride selectively on the unblocked surface relative to the blocked surface.
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Abstract
Methods and apparatuses for selectively depositing silicon nitride on silicon surfaces relative to silicon oxide surfaces and selectively depositing silicon nitride on silicon oxide surfaces relative to silicon surfaces are provided herein. Methods involve blocking one surface while leaving another surface unblocked and selectively depositing silicon nitride on the unblocked surface. The blocked surface may include an organic moiety having an Si—C bond. The method may include blocking one of an exposed hydroxyl-terminated silicon-containing surface and an exposed hydrogen-terminated silicon-containing surface of the substrate. Apparatuses include a process chamber having a pedestal, an outlet, and a controller for providing instructions for causing delivery of a semiconductor substrate to the pedestal, causing introduction of a silicon-containing precursor and causing introduction of a nitrogen-containing reactant without igniting a plasma.
65 Citations
19 Claims
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1. A method of depositing silicon nitride on a semiconductor substrate, the method comprising:
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providing the semiconductor substrate having a blocked surface and an unblocked surface, the blocked surface comprising an organic moiety having an Si—
C bond; andselectively depositing silicon nitride on the unblocked surface by one or more thermal atomic layer deposition cycles, each cycle comprising; exposing the semiconductor substrate having the blocked and unblocked surfaces to a silicon-containing precursor to adsorb the silicon-containing precursor to the unblocked surface; and exposing the semiconductor substrate to a nitrogen-containing reactant without igniting a plasma to form silicon nitride selectively on the unblocked surface relative to the blocked surface. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A method of depositing silicon nitride on a semiconductor substrate, the method comprising:
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providing the semiconductor substrate having an exposed hydroxyl-terminated silicon-containing surface and an exposed hydrogen-terminated silicon-containing surface; exposing the semiconductor substrate to a blocking reagent to block one of the exposed hydroxyl-terminated silicon-containing surface and the exposed hydrogen-terminated silicon-containing surface by forming an organic moiety on the one of the exposed hydroxyl-terminated silicon-containing surface and the exposed hydrogen-terminated silicon-containing surface while the other of the exposed hydroxyl-terminated silicon-containing surface and the exposed hydrogen-terminated silicon-containing surface remains unblocked; and selectively depositing silicon nitride on the other of the exposed hydroxyl-terminated silicon-containing surface and the exposed hydrogen-terminated silicon-containing surface by one or more thermal atomic layer deposition cycles, each cycle comprising; exposing the semiconductor substrate having the blocked and unblocked surfaces to a silicon-containing precursor to adsorb the silicon-containing precursor to the unblocked surface; and exposing the semiconductor substrate to a nitrogen-containing reactant without igniting a plasma to form silicon nitride selectively on the unblocked surface relative to the blocked surface. - View Dependent Claims (15, 16, 17, 18, 19)
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Specification