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Semiconductor device and manufacturing method thereof

  • US 10,490,420 B2
  • Filed: 09/13/2018
  • Issued: 11/26/2019
  • Est. Priority Date: 12/04/2009
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a gate electrode;

    a first insulating film over the gate electrode;

    an oxide semiconductor layer formed by sputtering over the first insulating film;

    a source electrode and a drain electrode over the oxide semiconductor layer;

    a second insulating film over the oxide semiconductor layer, the source electrode, and the drain electrode; and

    a third insulating film over the second insulating film,wherein a proportion of nitrogen of the third insulating film is higher than a proportion of nitrogen of the second insulating film,wherein a portion of the oxide semiconductor layer located between the source electrode and the drain electrode is thinner than portions of the oxide semiconductor layer below the source electrode and the drain electrode,wherein a superficial portion of at least the portion of the oxide semiconductor layer located between the source electrode and the drain electrode includes a crystal region,wherein a c-axis of the crystal region is aligned in a direction which is substantially perpendicular to a top surface of the oxide semiconductor layer, andwherein the oxide semiconductor layer includes indium, gallium, and zinc.

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