Semiconductor structure with conductive structure
First Claim
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1. A semiconductor device structure, comprising:
- a substrate;
a conductive pad formed over the substrate;
a protection layer formed over the conductive pad;
a conductive structure accessibly arranged through the protection layer and electrically connected to the conductive pad, wherein the conductive structure has a curved top surface that defines an apex, and an apex of the curved top surface is higher than a top surface of the protection layer;
a seed layer formed over the conductive structure, wherein the seed layer has a curved top surface;
a post-passivation interconnect (PPI) structure formed over the conductive structure;
an under bump metallurgy (UBM) layer formed over the PPI structure; and
a passivation layer formed between the PPI structure and the conductive structure, wherein the passivation layer is in direct contact with the PPI structure, the curved top surface of the seed layer and sidewalls of the conductive structure.
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Abstract
A semiconductor device structure and method for forming the same are provided. The semiconductor device structure includes a substrate and a conductive pad formed over the substrate. The semiconductor device structure also includes a protection layer formed over the conductive pad, and the protection layer has a trench. The semiconductor device structure further includes a conductive structure accessibly arranged through the trench of the protection layer and electrically connected to the conductive pad. The conductive structure has a curved top surface that defines an apex, and an apex of the curved top surface is higher than a top surface of the protection layer.
42 Citations
20 Claims
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1. A semiconductor device structure, comprising:
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a substrate; a conductive pad formed over the substrate; a protection layer formed over the conductive pad; a conductive structure accessibly arranged through the protection layer and electrically connected to the conductive pad, wherein the conductive structure has a curved top surface that defines an apex, and an apex of the curved top surface is higher than a top surface of the protection layer; a seed layer formed over the conductive structure, wherein the seed layer has a curved top surface; a post-passivation interconnect (PPI) structure formed over the conductive structure; an under bump metallurgy (UBM) layer formed over the PPI structure; and a passivation layer formed between the PPI structure and the conductive structure, wherein the passivation layer is in direct contact with the PPI structure, the curved top surface of the seed layer and sidewalls of the conductive structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A semiconductor device structure, comprising:
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a conductive pad formed over a substrate; a conductive structure formed over the conductive pad and in electrical connection there-with, wherein the conductive structure has an edge portion and a middle portion, and the middle portion has a curved top surface, and the edge portion has a planar top surface, and the curved top surface is curved toward the substrate; a seed layer formed on the conductive structure, wherein the seed layer is in direct contact with the conductive structure and has a curved bottom surface; a post-passivation interconnect (PPI) structure formed over the seed layer, wherein the PPI structure has a curved bottom surface; and a protection layer between the conductive pad and the conductive structure, wherein a lowest point of the curved top surface of the conductive structure is higher than a topmost surface of the protection layer. - View Dependent Claims (10, 11, 12, 13, 14)
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15. A semiconductor device structure, comprising:
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a die comprising a conductive pad; a conductive structure formed below the conductive pad, wherein the conductive structure has an edge portion and a middle portion, and edge portion has a planar bottom surface, and the middle portion has a curved bottom surface with a lowest point, and wherein the lowest point is between the planar bottom surface and a bottom surface of the conductive pad; a seed layer formed below the conductive structure, wherein the seed layer is in direct contact with the conductive structure and has a curved bottom surface; a post-passivation interconnect (PPI) structure formed below the seed layer; an under bump metallurgy (UBM) layer formed below the PPI structure; and a first electrical connector formed below the UBM layer, wherein the first electrical connector is electrically connected to the conductive structure by the seed layer. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification