Semiconductor devices comprising nitrogen-doped gate dielectric, and methods of forming semiconductor devices
First Claim
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1. A semiconductor device comprising:
- a first transistor of a first channel type, wherein the first transistor comprises;
a first gate electrode;
a first nitrogen-doped gate dielectric layer;
the first nitrogen-doped gate dielectric layer being doped with nitrogen to a first peak concentration; and
a first high-k material between the first nitrogen-doped gate dielectric layer and the first gate electrode, the first high-k material not comprising nitrogen therein; and
a second transistor of a second channel type, wherein the second transistor comprises;
a second gate electrode;
a second nitrogen-doped gate dielectric layer;
the second nitrogen-doped gate dielectric layer being doped with nitrogen and to a second peak concentration which is different from the first peak concentration; and
a second high-k material between the second nitrogen-doped gate dielectric layer and the second gate electrode, the second high-k material not comprising nitrogen therein.
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Abstract
Some embodiments include semiconductor devices having first transistors of a first channel type and having second transistors of a second channel type. The first transistors include a first gate electrode, a first nitrogen-doped gate dielectric layer and a first high-k material. The second transistors include a second gate electrode, a second nitrogen-doped gate dielectric layer and a second high-k material. The second nitrogen-doped gate dielectric layer is doped with nitrogen to a different peak concentration than the first nitrogen-doped gate dielectric layer. Some embodiments include methods of forming PMOS and NMOS transistors having nitrogen-doped gate dielectric material.
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Citations
20 Claims
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1. A semiconductor device comprising:
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a first transistor of a first channel type, wherein the first transistor comprises; a first gate electrode; a first nitrogen-doped gate dielectric layer;
the first nitrogen-doped gate dielectric layer being doped with nitrogen to a first peak concentration; anda first high-k material between the first nitrogen-doped gate dielectric layer and the first gate electrode, the first high-k material not comprising nitrogen therein; and a second transistor of a second channel type, wherein the second transistor comprises; a second gate electrode; a second nitrogen-doped gate dielectric layer;
the second nitrogen-doped gate dielectric layer being doped with nitrogen and to a second peak concentration which is different from the first peak concentration; anda second high-k material between the second nitrogen-doped gate dielectric layer and the second gate electrode, the second high-k material not comprising nitrogen therein. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A semiconductor device comprising:
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a PMOS transistor having a first nitrogen-doped gate dielectric layer doped with nitrogen to a first concentration, the PMOS transistor having a pair of p-type source/drain regions; an NMOS transistor having a second nitrogen-doped gate dielectric layer doped with nitrogen to a second concentration;
wherein the second concentration is at least about 30% greater than the first concentration, the NMOS transistor having a pair of n-type source/drain regions; andwherein the PMOS transistor and the NMOS transistor are directly adjacent to one another and together comprised by a CMOS;
one of the n-type source/drain regions of the NMOS transistor being spaced from one of the p-type source/drain regions of the PMOS transistor by intervening insulative material of an isolation region, said intervening insulative material directly contacting both said one of the n-type source/drain regions and said one of the p-type source/drain regions. - View Dependent Claims (10, 11, 12)
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13. A semiconductor device comprising:
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a first transistor of a first conductivity type, wherein the first transistor comprises; a first gate electrode; a first gate dielectric layer, wherein the first gate dielectric layer is doped with nitrogen; and a second gate dielectric layer, wherein the second gate dielectric layer intervenes between the first gate dielectric layer and the first gate electrode and includes a first high-k material; and a second transistor of a second conductivity type, wherein the second transistor comprises; a second gate electrode; a third gate dielectric layer, wherein the third gate dielectric layer is doped with nitrogen and is different in peak concentration of nitrogen from the first gate dielectric layer; and a fourth gate dielectric layer, wherein the fourth gate dielectric layer intervenes between the third gate dielectric layer and the second gate electrode and includes a second high-k material. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20)
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Specification