Method of producing optoelectronic components and surface-mounted optoelectronic component
First Claim
1. A method of producing optoelectronic components comprising:
- A) providing a carrier and a multitude of separated, unconnected optoelectronic semiconductor chips, wherein each semiconductor chip comprises contact elements for external electrical contacting arranged on a contact side of the semiconductor chip;
B) applying the semiconductor chips laterally next to one another on to the carrier, wherein the contact sides are made to face the carrier during application;
C) applying an electrically-conductive layer at least on to subregions of the sides of the semiconductor chips not covered by the carrier, wherein the electrically-conductive layer is of contiguous design;
D) applying a protective layer at least on to subregions of side surfaces of the semiconductor chips running transversely to the contact surface;
E) electrophoretically depositing a converter layer on to the electrically-conductive layer, wherein the converter layer is configured to convert at least part of radiation emitted by the semiconductor chips into radiation of a different wavelength range during the intended operation; and
F) removing the electrically-conductive layer from regions between the converter layer and the semiconductor chips, whereina connecting layer is applied on to the carrier and, during application in step B), the contact elements are pressed into the connecting layer deep enough that the contact elements are protected from being covered by the electrically-conductive layer in step C), ora protective frame is applied on to the carrier for each semiconductor chip and, during application in step B), the semiconductor chips are placed on the carrier such that the contact elements are at least partially enclosed by the corresponding protective frame, and in step C), the protective frame prevents the contact elements from being covered by the electrically-conductive layer.
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Accused Products
Abstract
A method of producing optoelectronic components includes A) providing a carrier and optoelectronic semiconductor chips including contact elements arranged on a contact side of the semiconductor chip; B) applying the semiconductor chips laterally next to one another on to the carrier, wherein the contact sides face the carrier during application; C) applying an electrically-conductive layer at least on to subregions of the sides of the semiconductor chip not covered by the carrier; D) applying a protective layer at least on to subregions of side surfaces of the semiconductor chips running transversely to the contact surface; E) electrophoretically depositing a converter layer on to the electrically-conductive layer, wherein the converter layer is configured to convert at least part of radiation emitted by the semiconductor chip into radiation of a different wavelength range; and F) removing the electrically-conductive layer from regions between the converter layer and the semiconductor chips.
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Citations
15 Claims
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1. A method of producing optoelectronic components comprising:
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A) providing a carrier and a multitude of separated, unconnected optoelectronic semiconductor chips, wherein each semiconductor chip comprises contact elements for external electrical contacting arranged on a contact side of the semiconductor chip; B) applying the semiconductor chips laterally next to one another on to the carrier, wherein the contact sides are made to face the carrier during application; C) applying an electrically-conductive layer at least on to subregions of the sides of the semiconductor chips not covered by the carrier, wherein the electrically-conductive layer is of contiguous design; D) applying a protective layer at least on to subregions of side surfaces of the semiconductor chips running transversely to the contact surface; E) electrophoretically depositing a converter layer on to the electrically-conductive layer, wherein the converter layer is configured to convert at least part of radiation emitted by the semiconductor chips into radiation of a different wavelength range during the intended operation; and F) removing the electrically-conductive layer from regions between the converter layer and the semiconductor chips, wherein a connecting layer is applied on to the carrier and, during application in step B), the contact elements are pressed into the connecting layer deep enough that the contact elements are protected from being covered by the electrically-conductive layer in step C), or a protective frame is applied on to the carrier for each semiconductor chip and, during application in step B), the semiconductor chips are placed on the carrier such that the contact elements are at least partially enclosed by the corresponding protective frame, and in step C), the protective frame prevents the contact elements from being covered by the electrically-conductive layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A surface-mountable optoelectronic component comprising:
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an optoelectronic semiconductor chip with exposed contact elements for external electrical contacting of the component, wherein the contact elements are arranged on a joint contact side of the semiconductor chip, a converter layer formed contiguously, continuously and without interruptions and covering a radiation exit surface opposite the contact side by at least 90%, an encapsulation layer applied on to the converter layer which completely covers and encloses the converter layer, and an electrically-conductive layer on side surfaces of the semiconductor chip extending transversely to the contact side, wherein the converter layer is configured to convert at least part of a radiation emitted by the semiconductor chip into radiation of a different wavelength range during the intended operation of the component, the converter layer has a homogenous layer thickness along its entire extent on the semiconductor chip with maximum thickness deviations of 5% from an average value of the layer thickness, the layer thickness of the converter layer is at most 70 μ
m,the converter layer is a powder of converter particles, which is held on to the semiconductor chip by the encapsulation layer, the electrically-conductive layer has a layer thickness of 100 nm to 500 nm, covers all side surfaces of the semiconductor chip in each case by at least 90% and has a reflectivity of at least 80% to the radiation emitted by the semiconductor chip, and the radiation exit surface is at least partially free of the reflective, electrically-conductive layer. - View Dependent Claims (13, 14)
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15. A method of producing optoelectronic components comprising:
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A) providing a carrier and a multitude of optoelectronic semiconductor chips, wherein each semiconductor chip comprises contact elements for external electrical contacting arranged on a contact side of the semiconductor chip; B) applying the semiconductor chips laterally next to one another on to the carrier, wherein the contact sides are made to face the carrier during application; C) applying an electrically-conductive layer at least on to subregions of the sides of the semiconductor chips not covered by the carrier, wherein the electrically-conductive layer is of contiguous design; D) applying a protective layer at least on to subregions of side surfaces of the semiconductor chips running transversely to the contact surface; E) electrophoretically depositing a converter layer on to the electrically-conductive layer, wherein the converter layer is configured to convert at least part of a radiation emitted by the semiconductor chips into radiation of a different wavelength range during the intended operation; and F) removing the electrically-conductive layer from regions between the converter layer and the semiconductor chips, wherein during removal of the electrically-conductive layer in step F), the protective layer covers regions of the electrically-conductive layer and prevents the electrically-conductive layer from being removed in the regions covered by the protective layer, in step E), the regions of the electrically-conductive layer covered by the protective layer remain free of the converter layer, and the electrically-conductive layer is reflective for light emitted by the semiconductor chips during operation.
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Specification