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Magnetic memory element including magnesium perpendicular enhancement layer

  • US 10,490,737 B2
  • Filed: 02/27/2019
  • Issued: 11/26/2019
  • Est. Priority Date: 09/14/2010
  • Status: Active Grant
First Claim
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1. A magnetic memory element comprising:

  • a magnetic free layer structure including one or more magnetic free layers that have a same variable magnetization direction substantially perpendicular to layer planes thereof;

    an insulating tunnel junction layer formed adjacent to said magnetic free layer structure;

    a magnetic reference layer structure including a first magnetic reference layer formed adjacent to said insulating tunnel junction layer and a second magnetic reference layer separated from said first magnetic reference layer by a magnesium perpendicular enhancement layer, said first and second magnetic reference layers having a first invariable magnetization direction substantially perpendicular to layer planes thereof;

    an anti-ferromagnetic coupling layer formed adjacent to said second magnetic reference layer opposite said magnesium perpendicular enhancement layer; and

    a magnetic fixed layer structure formed adjacent to said anti-ferromagnetic coupling layer opposite said second magnetic reference layer, said magnetic fixed layer structure having a second invariable magnetization direction that is substantially perpendicular to a layer plane thereof and is substantially opposite to said first invariable magnetization direction,wherein said first and second magnetic reference layers have different compositions.

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