Magnetic memory element including magnesium perpendicular enhancement layer
First Claim
1. A magnetic memory element comprising:
- a magnetic free layer structure including one or more magnetic free layers that have a same variable magnetization direction substantially perpendicular to layer planes thereof;
an insulating tunnel junction layer formed adjacent to said magnetic free layer structure;
a magnetic reference layer structure including a first magnetic reference layer formed adjacent to said insulating tunnel junction layer and a second magnetic reference layer separated from said first magnetic reference layer by a magnesium perpendicular enhancement layer, said first and second magnetic reference layers having a first invariable magnetization direction substantially perpendicular to layer planes thereof;
an anti-ferromagnetic coupling layer formed adjacent to said second magnetic reference layer opposite said magnesium perpendicular enhancement layer; and
a magnetic fixed layer structure formed adjacent to said anti-ferromagnetic coupling layer opposite said second magnetic reference layer, said magnetic fixed layer structure having a second invariable magnetization direction that is substantially perpendicular to a layer plane thereof and is substantially opposite to said first invariable magnetization direction,wherein said first and second magnetic reference layers have different compositions.
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Accused Products
Abstract
The present invention is directed to a magnetic memory element including a magnetic free layer structure that includes two magnetic free layers separated by a magnesium perpendicular enhancement layer; an insulating tunnel junction layer formed adjacent to the magnetic free layer structure; a first magnetic reference layer formed adjacent to the insulating tunnel junction layer; a second magnetic reference layer separated from the first magnetic reference layer by a non-magnetic perpendicular enhancement layer; an anti-ferromagnetic coupling layer formed adjacent to the second magnetic reference layer; and a magnetic fixed layer structure formed adjacent to the anti-ferromagnetic coupling layer. The two magnetic free layers have a same variable magnetization direction substantially perpendicular to layer planes thereof. The first and second magnetic reference layers have a first invariable magnetization direction substantially perpendicular to layer planes thereof. The magnetic fixed layer structure has a second invariable magnetization direction substantially opposite to the first invariable magnetization direction.
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Citations
26 Claims
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1. A magnetic memory element comprising:
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a magnetic free layer structure including one or more magnetic free layers that have a same variable magnetization direction substantially perpendicular to layer planes thereof; an insulating tunnel junction layer formed adjacent to said magnetic free layer structure; a magnetic reference layer structure including a first magnetic reference layer formed adjacent to said insulating tunnel junction layer and a second magnetic reference layer separated from said first magnetic reference layer by a magnesium perpendicular enhancement layer, said first and second magnetic reference layers having a first invariable magnetization direction substantially perpendicular to layer planes thereof; an anti-ferromagnetic coupling layer formed adjacent to said second magnetic reference layer opposite said magnesium perpendicular enhancement layer; and a magnetic fixed layer structure formed adjacent to said anti-ferromagnetic coupling layer opposite said second magnetic reference layer, said magnetic fixed layer structure having a second invariable magnetization direction that is substantially perpendicular to a layer plane thereof and is substantially opposite to said first invariable magnetization direction, wherein said first and second magnetic reference layers have different compositions. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A magnetic memory element comprising:
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a magnetic free layer structure including one or more magnetic free layers that have a same variable magnetization direction substantially perpendicular to layer planes thereof; an insulating tunnel junction layer formed adjacent to said magnetic free layer structure; a magnetic reference layer structure including a first magnetic reference layer formed adjacent to said insulating tunnel junction layer and a second magnetic reference layer separated from said first magnetic reference layer by a first non-magnetic perpendicular enhancement layer, said first and second magnetic reference layers having a first invariable magnetization direction substantially perpendicular to layer planes thereof; an anti-ferromagnetic coupling layer formed adjacent to said second magnetic reference layer opposite said first non-magnetic perpendicular enhancement layer; a magnetic fixed layer structure formed adjacent to said anti-ferromagnetic coupling layer opposite said second magnetic reference layer, said magnetic fixed layer structure having a second invariable magnetization direction that is substantially perpendicular to a layer plane thereof and is substantially opposite to said first invariable magnetization direction; a seed layer made of chromium or iridium formed adjacent to said magnetic fixed layer structure opposite said anti-ferromagnetic coupling layer, wherein said first and second magnetic reference layers have different compositions. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18)
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19. A magnetic memory element comprising:
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a magnetic free layer structure including a first magnetic free layer and a second magnetic free layer with a magnesium perpendicular enhancement layer interposed therebetween, said first and second magnetic free layers having a same variable magnetization direction substantially perpendicular to layer planes of said first and second magnetic free layers; an insulating tunnel junction layer formed adjacent to said first magnetic free layer; a magnetic reference layer structure including a first magnetic reference layer formed adjacent to said insulating tunnel junction layer and a second magnetic reference layer separated from said first magnetic reference layer by a non-magnetic perpendicular enhancement layer, said first and second magnetic reference layers having a first invariable magnetization direction substantially perpendicular to layer planes thereof; an anti-ferromagnetic coupling layer formed adjacent to said second magnetic reference layer opposite said non-magnetic perpendicular enhancement layer; and a magnetic fixed layer structure formed adjacent to said anti-ferromagnetic coupling layer opposite said second magnetic reference layer, said magnetic fixed layer structure having a second invariable magnetization direction that is substantially perpendicular to a layer plane thereof and is substantially opposite to said first invariable magnetization direction. - View Dependent Claims (20, 21, 22, 23, 24, 25, 26)
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Specification