Organic light-emitting display device
First Claim
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1. An organic light-emitting display device comprising:
- a substrate;
a driving thin film transistor on the substrate; and
a DAM at a side of the substrate,wherein the DAM comprises an inorganic layer, a first metallic DAM, and a first interlayer insulating layer on an upper portion of the first metallic DAM, andwherein the driving thin film transistor comprises a source electrode and a drain electrode on an upper portion of the first interlayer insulating layer.
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Abstract
An organic light-emitting display device includes: a substrate; a driving thin film transistor on the substrate; and a DAM at an outermost portion of the substrate, where the DAM includes an inorganic layer and includes a first metallic DAM. The first metallic DAM may include two or more metal layers spaced apart at a set interval.
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Citations
22 Claims
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1. An organic light-emitting display device comprising:
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a substrate; a driving thin film transistor on the substrate; and a DAM at a side of the substrate, wherein the DAM comprises an inorganic layer, a first metallic DAM, and a first interlayer insulating layer on an upper portion of the first metallic DAM, and wherein the driving thin film transistor comprises a source electrode and a drain electrode on an upper portion of the first interlayer insulating layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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21. An organic light-emitting display device comprising:
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a substrate; a driving thin film transistor on the substrate; and a DAM at a side of the substrate, wherein the DAM comprises an inorganic layer, a first metallic DAM, a first interlayer insulating layer on an upper portion of the first metallic DAM, and a second metallic DAM on an upper portion of the first metallic DAM, wherein the inorganic layer comprises a first interlayer insulating layer between the first metallic DAM and the second metallic DAM, a second interlayer insulating layer on the second metallic DAM, and a thin film encapsulation inorganic layer on an upper portion of the second interlayer insulating layer, and wherein the driving thin film transistor comprises a source electrode and a drain electrode on an upper portion of the first interlayer insulating layer. - View Dependent Claims (22)
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Specification