Narrow sized laser diode
First Claim
1. A gallium and nitrogen containing optical device operable as a laser diode, the device comprising:
- a gallium and nitrogen containing member;
a chip formed from the gallium and nitrogen containing member, the chip having a width and a length, the width of the chip being a distance between sides of the chip and the length of the chip being a distance between ends of the chip, the chip also having a p-type region and an n-side contact opposite the p-type region;
a ridge waveguide configured to emit laser light, the ridge waveguide oriented substantially parallel to the length of the chip, the ridge waveguide having a width that is less than the width of the chip, where the width of the chip is less than 120 microns;
one or more wirebonding pads disposed on the n-side contact of the chip for coupling wires to the chip; and
a submount coupled to the chip such that the p-type region of the chip is facing the submount.
1 Assignment
0 Petitions
Accused Products
Abstract
Gallium and nitrogen containing optical devices operable as laser diodes are disclosed. The devices include a gallium and nitrogen containing substrate member, which may be semipolar or non-polar. The devices include a chip formed from the gallium and nitrogen substrate member. The chip has a width and a length. The devices have a cavity oriented substantially parallel to the length of the chip, a dimension of less than 120 microns characterizing the width of the chip, and a pair of etched facets configured on the cavity of the chip. The pair of etched facets includes a first facet configured at a first end of the cavity and a second facet configured at a second end of the cavity.
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Citations
20 Claims
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1. A gallium and nitrogen containing optical device operable as a laser diode, the device comprising:
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a gallium and nitrogen containing member; a chip formed from the gallium and nitrogen containing member, the chip having a width and a length, the width of the chip being a distance between sides of the chip and the length of the chip being a distance between ends of the chip, the chip also having a p-type region and an n-side contact opposite the p-type region; a ridge waveguide configured to emit laser light, the ridge waveguide oriented substantially parallel to the length of the chip, the ridge waveguide having a width that is less than the width of the chip, where the width of the chip is less than 120 microns; one or more wirebonding pads disposed on the n-side contact of the chip for coupling wires to the chip; and a submount coupled to the chip such that the p-type region of the chip is facing the submount. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A gallium and nitrogen containing optical device operable as a laser diode, the device comprising:
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a gallium and nitrogen containing member; a chip formed from the gallium and nitrogen containing member, the chip having a width and a length, the width of the chip being a distance between sides of the chip and the length of the chip being a distance between ends of the chip, the chip also having a p-type region and an n-side contact opposite the p-type region; a ridge waveguide configured to emit laser light, the ridge waveguide oriented substantially parallel to the length of the chip, the ridge waveguide having a width that is less than the width of the chip, where the width of the chip is less than 120 microns; one or more wirebonding pads disposed on the n-side contact of the chip for coupling wires to the chip; a pair of etched facets configured on the ends of the chip, the pair of etched facets including a first facet configured at a first end of the chip and a second facet configured at a second end of the chip; and a submount coupled to the chip such that the p-type region of the chip is facing the submount. - View Dependent Claims (8, 9, 10, 11)
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12. A system comprising:
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a lighting apparatus; and an optical device configured to provide light for the lighting apparatus, the optical device operable as a laser diode, the optical device comprising; a gallium and nitrogen containing member; a chip formed from the gallium and nitrogen containing member, the chip having a width and a length, the width of the chip being a distance between sides of the chip and the length of the chip being a distance between ends of the chip, the chip also having a p-type region and an n-side contact opposite the p-type region; a ridge waveguide configured to emit laser light, the ridge waveguide oriented substantially parallel to the length of the chip, the ridge waveguide having a width that is less than the width of the chip, where the width of the chip is less than 120 microns; one or more wirebonding pads disposed on the n-side contact of the chip for coupling wires to the chip; and a submount coupled to the chip such that the p-type region of the chip is facing the submount. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20)
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Specification