Method of mask simulation model for OPC and mask making
First Claim
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1. An integrated circuit (IC) method comprising:
- building a mask model to simulate an aerial mask image of a mask optically projected on a wafer through projection optics using an optical radiation energy of a lithography process, and a compound lithography computational (CLC) model to simulate a wafer pattern;
calibrating the mask model using a measured aerial mask image of the mask optically projected on a second wafer through the projection optics;
calibrating the compound lithography computational model using a measured wafer data and the calibrated mask model; and
performing an optical proximity correction (OPC) process to an IC pattern using the calibrated compound computational model, thereby generating a mask pattern for mask fabrication.
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Abstract
The present disclosure provides an integrated circuit (IC) method in accordance with some embodiments. The method includes building a mask model to simulate a mask image and a compound lithography computational model to simulate a wafer pattern; calibrating the mask model using a measured mask image; calibrating the compound lithography computational model using a measured wafer data and the calibrated mask model; and performing an optical proximity correction (OPC) process to an IC pattern using the calibrated compound computational model, thereby generating a mask pattern for mask fabrication.
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Citations
20 Claims
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1. An integrated circuit (IC) method comprising:
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building a mask model to simulate an aerial mask image of a mask optically projected on a wafer through projection optics using an optical radiation energy of a lithography process, and a compound lithography computational (CLC) model to simulate a wafer pattern; calibrating the mask model using a measured aerial mask image of the mask optically projected on a second wafer through the projection optics; calibrating the compound lithography computational model using a measured wafer data and the calibrated mask model; and performing an optical proximity correction (OPC) process to an IC pattern using the calibrated compound computational model, thereby generating a mask pattern for mask fabrication. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. An integrated circuit (IC) method comprising:
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measuring a mask image of a mask optically projected on a wafer with an instrument selected from a lithography exposure system and an image measurement system (IMS) using an optical radiation source selected from ultra-violet (UV), deep UV, extreme UV (EUV) sources; calibrating a mask model using the measured mask image; calibrating a compound lithography computational (CLC) model using a measured wafer data and the calibrated mask model; and performing an optical proximity correction (OPC) process to an IC pattern using the calibrated CLC model, thereby generating a mask pattern for mask fabrication. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18)
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19. An integrated circuit (IC) design system, comprising
a mask data module designed to collect mask imaging data, wherein the mask data module includes: -
a radiation source to generate a light radiation selected from ultra-violet (UV), deep UV, and extreme UV (EUV) light; projection optics to project a mask image of a mask to an image stage, wherein the mask image is designed to mimic an image of the mask projected onto a wafer in a lithography system in a lithography exposing process; and an image detector to collect the mask imaging data at the image stage, the mask imaging data includes the mask image; a wafer data module designed to collect wafer manufacturing data from a wafer making process, wherein the wafer manufacturing data includes wafer etching data; a first calibration module designed to calibrate a mask model based on the mask imaging data; a second calibration module designed to calibrate a compound lithography computational model based on the wafer manufacturing data; and an optical proximity correction (OPC) module designed to perform an OPC process using the mask model and the compound lithography computational mode. - View Dependent Claims (20)
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Specification