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Dual gate memory devices

  • US 10,497,415 B2
  • Filed: 01/08/2018
  • Issued: 12/03/2019
  • Est. Priority Date: 01/08/2018
  • Status: Active Grant
First Claim
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1. A memory device, comprising:

  • a current selector component, including;

    a first charge storage device having a first gate with a corresponding first threshold voltage, the first charge storage device configured to store a first charge; and

    a second charge storage device coupled in parallel with the first charge storage device, the second charge storage device having a second gate with a corresponding second threshold voltage, distinct from the first threshold voltage, the second charge storage device configured to store a second charge; and

    a magnetic memory component electrically coupled to the current selector component; and

    control circuitry coupled to first gate and the second gate of the current selector component and configured to govern operation of the current selector component, including;

    enabling a read operation on the magnetic memory component by selectively enabling the first charge storage device to cause the current selector component to supply a first current to the magnetic memory component, the first current corresponding to the first charge; and

    enabling a write operation on the magnetic memory component by selectively enabling the first charge storage device and/or the second charge storage device to cause the current selector component to supply a second current, greater than the first current, to the magnetic memory component.

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