Dual gate memory devices
First Claim
1. A memory device, comprising:
- a current selector component, including;
a first charge storage device having a first gate with a corresponding first threshold voltage, the first charge storage device configured to store a first charge; and
a second charge storage device coupled in parallel with the first charge storage device, the second charge storage device having a second gate with a corresponding second threshold voltage, distinct from the first threshold voltage, the second charge storage device configured to store a second charge; and
a magnetic memory component electrically coupled to the current selector component; and
control circuitry coupled to first gate and the second gate of the current selector component and configured to govern operation of the current selector component, including;
enabling a read operation on the magnetic memory component by selectively enabling the first charge storage device to cause the current selector component to supply a first current to the magnetic memory component, the first current corresponding to the first charge; and
enabling a write operation on the magnetic memory component by selectively enabling the first charge storage device and/or the second charge storage device to cause the current selector component to supply a second current, greater than the first current, to the magnetic memory component.
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Accused Products
Abstract
The various implementations described herein include methods, devices, and systems for performing operations on memory devices. In one aspect, a memory device includes: (1) a first charge storage device having a first gate with a corresponding first threshold voltage, the first charge storage device configured to store charge corresponding to one or more first bits; and (2) a second charge storage device having a second gate with a corresponding second threshold voltage, distinct from the first threshold voltage, the second charge storage device configured to store charge corresponding to one or more second bits; where the second charge storage device is coupled in parallel with the first charge storage device.
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Citations
11 Claims
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1. A memory device, comprising:
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a current selector component, including; a first charge storage device having a first gate with a corresponding first threshold voltage, the first charge storage device configured to store a first charge; and a second charge storage device coupled in parallel with the first charge storage device, the second charge storage device having a second gate with a corresponding second threshold voltage, distinct from the first threshold voltage, the second charge storage device configured to store a second charge; and a magnetic memory component electrically coupled to the current selector component; and control circuitry coupled to first gate and the second gate of the current selector component and configured to govern operation of the current selector component, including; enabling a read operation on the magnetic memory component by selectively enabling the first charge storage device to cause the current selector component to supply a first current to the magnetic memory component, the first current corresponding to the first charge; and enabling a write operation on the magnetic memory component by selectively enabling the first charge storage device and/or the second charge storage device to cause the current selector component to supply a second current, greater than the first current, to the magnetic memory component. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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Specification