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Memory device architecture

  • US 10,497,435 B2
  • Filed: 09/13/2018
  • Issued: 12/03/2019
  • Est. Priority Date: 10/12/2012
  • Status: Active Grant
First Claim
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1. A method, comprising:

  • forming a memory array of memory cells occupying a footprint; and

    forming a plurality of word line drivers in a circuit level, the plurality of word line drivers within the footprint of the memory array; and

    forming a plurality of digit line drivers in the circuit level, the plurality of digit line drivers within the footprint of the memory array,wherein the circuit level comprises a plurality of word line driver connection points and digit line driver connection points distributed across the footprint.

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