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Back-end-of-the line capacitor

  • US 10,497,519 B1
  • Filed: 09/27/2018
  • Issued: 12/03/2019
  • Est. Priority Date: 09/27/2018
  • Status: Active Grant
First Claim
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1. A back-end-of-the-line (BEOL) metal-insulator-metal (MIM) capacitor comprising:

  • a first electrode plate comprising an electrically conductive interconnect structure embedded in a first interconnect dielectric material layer;

    a first capacitor dielectric material located above the electrically conductive interconnect structure and embedded in a second interconnect dielectric material layer;

    a second electrode plate located on the first capacitor dielectric material and embedded in the second interconnect dielectric material layer;

    a second capacitor dielectric material located on the second electrode plate and embedded in the second interconnect dielectric material layer, wherein a surface of the second capacitor dielectric material contacts an outermost sidewall surface of the second electrode plate;

    a third electrode plate located on the second capacitor dielectric material and embedded in the second interconnect dielectric material layer;

    a first contact structure present in the second interconnect dielectric material layer and contacting a surface of the first interconnect dielectric material layer, wherein the first contact structure passes through the second electrode plate and the first capacitor dielectric material; and

    a second contact structure present in the second interconnect dielectric material layer and contacting a surface of the first electrode plate, wherein the second contact structure passes through the third electrode plate and the second capacitor dielectric material.

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