Light emitting device, method of manufacturing the same, and manufacturing apparatus therefor

• US 10,497,755 B2
• Filed: 09/15/2016
• Issued: 12/03/2019
• Est. Priority Date: 12/28/2001
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei, Hamatani, Toshiji, Takayama, Toru
• Primary Examiner(s): Dickey, Thomas L
• Application Number:
  US15/266,365
• Publication Number:
  US 20170005146A1
• Time in Patent Office: 1,174 Days
• CPC Class Codes: H01L 21/67207 comprising a chamber adapted to a particular process
• CPC Class Codes: H10K 2102/3026 Top emission
• CPC Class Codes: H10K 50/125 specially adapted for multicolour light emission, e.g. for emitting white light
• CPC Class Codes: H10K 50/13 comprising stacked EL layers within one EL unit
• CPC Class Codes: H10K 50/84 Passivation; Containers; Encapsulations
• CPC Class Codes: H10K 50/841 Self-supporting sealing arrangements
• CPC Class Codes: H10K 50/844 Encapsulations
• CPC Class Codes: H10K 50/865 comprising light absorbing layers, e.g. light-blocking layers
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays
• CPC Class Codes: H10K 59/123 Connection of the pixel electrodes to the thin film transistors [TFT]
• CPC Class Codes: H10K 59/124 Insulating layers formed between TFT elements and OLED elements
• CPC Class Codes: H10K 59/17 Passive-matrix OLED displays
• CPC Class Codes: H10K 59/32 Stacked devices having two or more layers, each emitting at different wavelengths
• CPC Class Codes: H10K 59/35 comprising red-green-blue [RGB] subpixels
• CPC Class Codes: H10K 59/353 characterised by the geometrical arrangement of the RGB subpixels
• CPC Class Codes: H10K 59/38 comprising colour filters or colour changing media [CCM]
• CPC Class Codes: H10K 59/871 Self-supporting sealing arrangements
• CPC Class Codes: H10K 59/873 Encapsulations
• CPC Class Codes: H10K 59/8792 comprising light absorbing layers, e.g. black layers
• CPC Class Codes: H10K 71/00 Manufacture or treatment specially adapted for the organic devices covered by this subclass
• CPC Class Codes: H10K 71/40 : Thermal treatment, e.g. annealing in the presence of a solvent vapour

Abstract

A light emitting device having high definition, a high aperture ratio, and high reliability is provided. The present invention achieves high definition and a high aperture ratio with a full color flat panel display using red, green, and blue color emission light by intentionally forming laminate portions, wherein portions of different organic compound layers of adjacent light emitting elements overlap with each other, without depending upon the method of forming the organic compound layers or the film formation precision.

Claims

1. An active matrix display device comprising:

a first substrate;

an insulating film over the first substrate;

a transistor over the first substrate;

an interlayer insulating film over the insulating film;

a light emitting element over the insulating film, the light emitting element comprising;

a first electrode, the first electrode being connected to the transistor;

a second electrode overlapping with the first electrode; and

an organic compound layer sandwiched between the first electrode and the second electrode;

a protective film over the light emitting element;

a sealant over the protective film; and

a second substrate over the protective film,

wherein the interlayer insulating film is on and in direct contact with the insulating film,

wherein the protective film is in direct contact with the insulating film,

wherein the sealant overlaps with the insulating film, the interlayer insulating film, and the protective film,

wherein the sealant is not in direct contact with a side surface of the second substrate, and

wherein no layer is in direct contact with a side surface of the sealant.

2. The active matrix display device according to claim 1,

wherein a side edge of the interlayer insulating film is in direct contact with and is covered by the protective film, and

wherein a contact interface of the protective film with the insulating film is in direct contact with the side edge of the interlayer insulating film.

3. The active matrix display device according to claim 1,

wherein the protective film is in direct contact with the light emitting element.

4. The active matrix display device according to claim 1,

wherein the insulating film comprises silicon, nitrogen, and oxygen, and

wherein the protective film comprises silicon and nitrogen.

5. The active matrix display device according to claim 1, further comprising a flexible printed circuit affixed to the first substrate,

wherein the active matrix display device is an EL module.

6. An electronic equipment comprising the active matrix display device according to claim 1.

7. The active matrix display device according to claim 1, wherein the first substrate is a flexible substrate.

8. The active matrix display device according to claim 1, wherein light emitted from the light emitting element is extracted through the protective film.

9. An active matrix display device comprising:

a first substrate;

an insulating film over the first substrate;

a transistor over the first substrate;

an interlayer insulating film over the transistor and the insulating film;

a light emitting element over the insulating film and the interlayer insulating film, the light emitting element comprising;

a first electrode, the first electrode being connected to the transistor via an opening in the interlayer insulating film;

a second electrode overlapping with the first electrode; and

an organic compound layer sandwiched between the first electrode and the second electrode; and

a protective film over the light emitting element;

a sealant over the protective film; and

a second substrate over the protective film,

wherein the interlayer insulating film overlaps the transistor,

wherein the interlayer insulating film is on and in direct contact with the insulating film,

wherein the protective film is in direct contact with the insulating film, and

wherein the sealant overlaps with the insulating film, the interlayer insulating film, and the protective film,

wherein the sealant is not in direct contact with a side surface of the second substrate, and

wherein no layer is in direct contact with a side surface of the sealant.

10. The active matrix display device according to claim 9,

wherein the interlayer insulating film is continuously formed.

11. The active matrix display device according to claim 9,

wherein the protective film is in direct contact with the light emitting element.

12. The active matrix display device according to claim 9,

wherein the insulating film comprises silicon, nitrogen, and oxygen, and

wherein the protective film comprises silicon and nitrogen.

13. The active matrix display device according to claim 9, further comprising a flexible printed circuit affixed to the first substrate,

wherein the active matrix display device is an EL module.

14. An electronic equipment comprising the active matrix display device according to claim 9.

15. An active matrix display device comprising:

a first substrate;

an insulating film over the first substrate;

a transistor over the first substrate;

an interlayer insulating film over the transistor and the insulating film;

a light emitting element over the insulating film and the interlayer insulating film, the light emitting element comprising;

a first electrode, the first electrode being connected to the transistor via an opening in the interlayer insulating film;

a second electrode overlapping with the first electrode; and

an organic compound layer sandwiched between the first electrode and the second electrode; and

a protective film over the light emitting element;

a sealant over the protective film; and

a second substrate over the protective film,

wherein the interlayer insulating film comprises a first portion overlapping the transistor,

wherein the interlayer insulating film comprises a second portion on and in direct contact with the insulating film,

wherein a side edge of the second portion of the interlayer insulating film is in direct contact with and is covered by the protective film,

wherein the protective film is in direct contact with the insulating film,

wherein a contact interface of the protective film with the insulating film is in direct contact with the side edge of the second portion of the interlayer insulating film, and

wherein the sealant overlaps with the insulating film, the interlayer insulating film, and the protective film,

wherein the sealant is not in direct contact with a side surface of the second substrate, and

wherein no layer is in direct contact with a side surface of the sealant.

16. The active matrix display device according to claim 15,

wherein the interlayer insulating film is continuously formed from the first portion to the second portion.

17. The active matrix display device according to claim 15,

wherein the protective film is in direct contact with the light emitting element.

18. The active matrix display device according to claim 15,

wherein the insulating film comprises silicon, nitrogen, and oxygen, and

wherein the protective film comprises silicon and nitrogen.

19. The active matrix display device according to claim 15, further comprising a flexible printed circuit affixed to the first substrate,

wherein the active matrix display device is an EL module.

20. An electronic equipment comprising the active matrix display device according to claim 15.