Method for fabricating semiconductor device
First Claim
1. A method for fabricating semiconductor device, comprising:
- providing a substrate having a first region and a second region;
forming a first fin-shaped structure on the first region and a second fin-shaped structure on the second region;
forming a first spacer adjacent to the first fin-shaped structure and a second spacer adjacent to the second fin-shaped structure;
using the first spacer and the second spacer as mask to remove part of the substrate for forming a third fin-shaped structure on the first region and a fourth fin-shaped structure on the second region, wherein the third fin-shaped structure comprises a first top portion and a first bottom portion and the fourth fin-shaped structure comprises a second top portion and a second bottom portion;
forming a first doped layer on the first fin-shaped structure and the second fin-shaped structure;
forming a first hard mask on the first doped layer;
removing the first hard mask and the first doped layer on the second region; and
forming a second doped layer on the first region and the second region.
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Abstract
A method for fabricating semiconductor device includes the steps of: providing a substrate having a first region and a second region; forming a first fin-shaped structure on the first region and a second fin-shaped structure on the second region; forming a first spacer adjacent to the first fin-shaped structure and a second spacer adjacent to the second fin-shaped structure; and using the first spacer and the second spacer as mask to remove part of the substrate for forming a third fin-shaped structure on the first region and a fourth fin-shaped structure on the second region, in which the third fin-shaped structure includes a first top portion and a first bottom portion and the fourth fin-shaped structure includes a second top portion and a second bottom portion.
21 Citations
4 Claims
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1. A method for fabricating semiconductor device, comprising:
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providing a substrate having a first region and a second region; forming a first fin-shaped structure on the first region and a second fin-shaped structure on the second region; forming a first spacer adjacent to the first fin-shaped structure and a second spacer adjacent to the second fin-shaped structure; using the first spacer and the second spacer as mask to remove part of the substrate for forming a third fin-shaped structure on the first region and a fourth fin-shaped structure on the second region, wherein the third fin-shaped structure comprises a first top portion and a first bottom portion and the fourth fin-shaped structure comprises a second top portion and a second bottom portion; forming a first doped layer on the first fin-shaped structure and the second fin-shaped structure; forming a first hard mask on the first doped layer; removing the first hard mask and the first doped layer on the second region; and forming a second doped layer on the first region and the second region. - View Dependent Claims (2, 3, 4)
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Specification