Light-emitting devices and methods of manufacturing the same

• US 10,497,828 B2
• Filed: 02/27/2018
• Issued: 12/03/2019
• Est. Priority Date: 10/19/2017
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Sakong, Tan, Kim, Byoung-kyun, Lim, Jin-young, Hyun, Jae-sung
• Primary Examiner(s): Amer, Mounir S
• Application Number:
  US15/906,539
• Publication Number:
  US 20190123237A1
• Time in Patent Office: 644 Days
• Field of Search: None
• CPC Class Codes: H01L 33/0075 comprising nitride compounds
• CPC Class Codes: H01L 33/025 Physical imperfections, e.g. particular concentration or distribution of impurities
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/12 with a stress relaxation structure, e.g. buffer layer
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/32 containing nitrogen

Abstract

A light-emitting device includes a light-emitting structure including a first-conductivity-type nitride semiconductor layer on a substrate, an active layer on the first-conductivity-type nitride semiconductor layer, and a second-conductivity-type nitride semiconductor layer on the active layer, and a buffer layer between the substrate and the light-emitting structure. The buffer layer includes a plurality of voids. The plurality of voids extend vertically into the buffer layer from a surface of the buffer layer. The surface of the buffer layer is proximate to the light-emitting structure. The plurality of voids have different horizontal sectional areas.

Claims

1. A light-emitting device, comprising:

a light-emitting structure, the light-emitting structure including

a first-conductivity-type nitride semiconductor layer on a substrate,

an active layer on the first-conductivity-type nitride semiconductor layer, and

a second-conductivity-type nitride semiconductor layer on the active layer;

a buffer layer between the substrate and the light-emitting structure, the buffer layer including

a plurality of voids, the plurality of voids extending vertically into the buffer layer from a surface of the buffer layer, the surface proximate to the light-emitting structure, the plurality of voids having different horizontal sectional areas; and

a mask layer between the buffer layer and the light-emitting structure, the mask layer including a plurality of openings.

2. The light-emitting device of claim 1, wherein the plurality of voids have different heights.

3. The light-emitting device of claim 1, wherein the plurality of voids have substantially common heights.

4. The light-emitting device of claim 3, wherein the buffer layer includes

a first nitride semiconductor layer,

a second nitride semiconductor layer, and

an etch stop layer between the first nitride semiconductor layer and the second nitride semiconductor layer.

5. The light-emitting device of claim 4, wherein the etch stop layer includes aluminum.

6. The light-emitting device of claim 1, wherein the plurality of voids have heights that are less than a vertical length of the buffer layer.

7. The light-emitting device of claim 1, wherein a horizontal sectional shape of each opening of the plurality of openings is a substantially circular shape.

8. The light-emitting device of claim 7, wherein the buffer layer includes a plurality of threading dislocations extending in a perpendicular direction, the plurality of threading dislocations overlapping at least portions of the plurality of openings.

9. The light-emitting device of claim 8, wherein the plurality of voids include

first voids having a first horizontal sectional area;

second voids having a second horizontal sectional area, the second horizontal sectional area less than the first horizontal sectional area; and

third voids having a third horizontal sectional area, the third horizontal sectional area less than the second horizontal sectional area,

wherein the plurality of threading dislocations include

first threading dislocations corresponding to the first voids,

second threading dislocations corresponding to the second voids, and

third threading dislocations corresponding to the third voids.

10. The light-emitting device of claim 9, wherein

the first voids have a first height,

the second voids have a second height, the second height being less than the first height, and

the third voids have a third height, the third height being less than the second height.

11. The light-emitting device of claim 9, wherein

the first threading dislocations are screw dislocations,

the third threading dislocations are edge dislocations, and

the second threading dislocations are mixed dislocations of the edge dislocations and the screw dislocations.

12. The light-emitting device of claim 9, wherein

the first voids are aligned with the first threading dislocations,

the second voids are aligned with the second threading dislocations, and

the third voids are aligned with the third threading dislocations.

13. A light-emitting device comprising:

a light-emitting structure, the light-emitting structure including

a first-conductivity-type nitride semiconductor layer on a substrate,

an active layer on the first-conductivity-type nitride semiconductor layer, and

a second-conductivity-type nitride semiconductor layer on the active layer;

a buffer layer between the substrate and the light-emitting structure, the buffer layer including

a plurality of voids, the plurality of voids extending vertically into the buffer layer from a surface of the buffer layer, the surface proximate to the light-emitting structure; and

a mask layer between the buffer layer and the light-emitting structure, the mask layer including a plurality of openings, each opening of the plurality of openings having a horizontal sectional shape that is a substantially circular shape.

14. The light-emitting device of claim 13, wherein a maximum horizontal sectional area of each opening of the plurality of openings is less than horizontal sectional areas of the plurality of voids.

15. The light-emitting device of claim 13, wherein the mask layer includes aluminum nitride.

16. A light-emitting device comprising:

a light-emitting structure on a light-transmissive substrate, the light-emitting structure including a first-conductivity-type nitride semiconductor layer, an active layer, and a second-conductivity-type nitride semiconductor layer;

a buffer layer between the light-transmissive substrate and the light-emitting structure, the buffer layer including a plurality of voids, the plurality of voids extending vertically into the buffer layer from a surface of the buffer layer, the surface proximate to the light-emitting structure, the plurality of voids having different horizontal sectional areas;

a first electrode on the first-conductivity-type nitride semiconductor layer, the first electrode coupled to the first-conductivity-type nitride semiconductor layer;

a second electrode on the second-conductivity-type nitride semiconductor layer, the second electrode coupled to the second-conductivity-type nitride semiconductor layer; and

a mask layer between the buffer layer and the light-emitting structure, the mask layer including a plurality of openings.

17. The light-emitting device of claim 16, wherein the plurality of voids have different heights.

18. The light-emitting device of claim 16,

wherein a horizontal sectional shape of each opening of the plurality of openings is a substantially circular shape.

19. The light-emitting device of claim 18, wherein the mask layer includes aluminum nitride.