Light emitting device, light emitting element package, and light emitting device

• US 10,497,835 B2
• Filed: 09/26/2016
• Issued: 12/03/2019
• Est. Priority Date: 09/25/2015
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: Jung, Se Yeon
• Primary Examiner(s): Wilson, Allan R
• Application Number:
  US15/762,356
• Publication Number:
  US 20180358513A1
• Time in Patent Office: 1,163 Days
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/181 Encapsulation
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/12 with a stress relaxation structure, e.g. buffer layer
• CPC Class Codes: H01L 33/145 with a current-blocking structure
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/30 containing only elements of Group III and Group V of the Periodic Table
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/387 with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/42 Transparent materials
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/486 adapted for surface mounting
• CPC Class Codes: H01L 33/502 Wavelength conversion materials
• CPC Class Codes: H01L 33/56 Materials, e.g. epoxy or silicone resin
• CPC Class Codes: H01L 33/60 : Reflective elements
• CPC Class Codes: H01L 33/62 : Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A light emitting element according to one embodiment can comprise: a first conductive semiconductor layer; an active layer on the first conductive semiconductor layer; a second conductive semiconductor layer on the active layer; a light-transmitting ohmic layer on the second conductive semiconductor layer; a first electrode electrically connected with the first conductive semiconductor layer; and a second electrode on the light-transmitting ohmic layer. The light emitting element can include two first sides facing each other, and two second sides facing each other. The width of the first side is greater than the width of the second side, and the first side and the second side can be perpendicular to each other. The distance between the first branch electrode and the second branch electrode is ⅙ to ½ of the width of the second side of either one thereof.

Claims

1. A light emitting device comprising:

a first conductive semiconductor layer;

an active layer on the first conductive semiconductor layer;

a second conductive semiconductor layer on the active layer;

a light-transmitting ohmic layer on the second conductive semiconductor layer;

a first electrode electrically connected to the first conductive semiconductor layer; and

a second electrode on the light-transmitting ohmic layer,

wherein the first electrode includes a first pad electrode and a first branched electrode, and the second electrode includes a second pad electrode and a second branched electrode,

wherein the light emitting device includes two first sides facing each other and two second sides facing each other, and a width of the first sides is greater than that of the second sides, and the first sides and the second sides are orthogonal to each other, and a distance between the first branched electrode and the second branched electrode is ⅙

to ½

of the width of any one of the second sides,

wherein the first branched electrode is closest to one of the first sides, and the second branched electrode is closest to another one of the first sides, and

wherein the width of any one of the second sides is 200 to 300 μ

m, and the distance between the first branched electrode and the second branched electrode is 50 to 150 μ

m.

2. The light emitting device of claim 1, wherein an area of an upper side of the light emitting device is 300,000 μ

m² or less, and

the distance between the first branched electrode and the second branched electrode is 90 to 110 μ

m.

3. The light emitting device of claim 1, wherein a second distance between the second branched electrode and an edge of the light emitting device is ⅙

to ¼

of the width of the second side,

wherein the edge of the light emitting device is a nearest edge parallel to the second branched electrode.

4. The light emitting device of claim 1, wherein a second distance between the second branched electrode and an edge of the light emitting device is ⅙

to ⅕

of the width of the second side.

5. The light emitting device of claim 1, wherein a thickness of the light-transmitting ohmic layer is 40 to 60 nm.

6. The light emitting device of claim 2, wherein the distance between the first branched electrode and the second branched electrode is 3/10 to 11/30 of the width of the width of the second side.

7. The light emitting device of claim 1, wherein the light emitting device is included in a light emitting device package comprising:

a third electrode layer and a fourth electrode layer electrically coupled to the light emitting device;

a package body portion provided on the third electrode layer and the fourth electrode layer, the package body portion having a cavity to receive the light emitting device; and

a molding member having a phosphor and surrounding the light emitting device in the cavity of the package body portion.

8. The light emitting device of claim 1, wherein the light emitting device is one of a plurality of light emitting devices included in a light emitting apparatus.

9. The light emitting device of claim 1, wherein the first electrode includes only one first branched electrode, and the second electrode includes only one second branched electrode.

10. A light emitting device comprising:

a first conductive semiconductor layer;

an active layer on the first conductive semiconductor layer;

a second conductive semiconductor layer on the active layer;

a light-transmitting ohmic layer on the second conductive semiconductor layer;

a first electrode electrically connected to the first conductive semiconductor layer;

a second electrode on the light-transmitting ohmic layer; and

an insulating layer on the light-transmitting ohmic layer,

wherein the first electrode includes a first pad electrode and a first branched electrode, and the second electrode includes a second pad electrode and a second branched electrode,

wherein the light emitting device includes two first sides facing each other and two second sides facing each other, and a width of the first sides is greater than that of the second sides, and the first sides and the second sides are orthogonal to each other, and a distance between the first branched electrode and the second branched electrode is ⅙

to ½

of the width of any one of the second sides,

wherein the first branched electrode is closest to one of the first sides, and the second branched electrode is closest to another one of the first sides,

wherein the first electrode includes a plurality of penetrating electrodes connected to the first branched electrode and electrically connected to the first conductive semiconductor layer through the insulating layer, and

wherein the first electrode further comprises a first ohmic branched electrode in contact with the first conductive semiconductor layer under the plurality of penetrating electrodes.

11. The light emitting device of claim 10, wherein a first lateral width of any one of the penetrating electrodes electrically connected to the first conductive semiconductor layer is greater than a first distance between two adjacent first penetrating electrodes.

12. The light emitting device of claim 10, wherein an area of the light emitting device is 300,000 μ

m² or less, the width of the second side is 200 μ

m to 300 μ

m.

13. The light emitting device of claim 12, wherein the distance between the first branched electrode and the second branched electrode is 3/10 to 11/30 of the width of the width of the second side.

14. The light emitting device of claim 11, wherein the first lateral width of any one of the penetrating electrodes electrically connected to the first conductive semiconductor layer is 2.5 times or more the first distance between the two adjacent first penetrating electrodes.

15. The light emitting device of claim 14, wherein the first lateral width of any one of the penetrating electrodes is 50 μ

m or more, and the first distance between the two adjacent first penetrating electrodes is about 20 μ

m.

16. The light emitting device of claim 15, wherein the first lateral width of any one of the penetrating electrodes is about 50 to 70 μ

m, and the first distance between the two adjacent first penetrating electrodes is about 15 to 25 μ

m.

17. The light emitting device of claim 10, wherein a thickness of any one of the penetrating electrodes is greater a thickness of the first branched electrode.

18. The light emitting device of claim 10, wherein the first electrode includes only one first branched electrode, and the second electrode includes only one second branched electrode.

19. A light emitting device comprising:

a first conductive semiconductor layer;

an active layer on the first conductive semiconductor layer;

a second conductive semiconductor layer on the active layer;

a light-transmitting ohmic layer on the second conductive semiconductor layer;

a first electrode electrically connected to the first conductive semiconductor layer; and

a second electrode on the light-transmitting ohmic layer,

wherein the first conductive semiconductor layer includes two first sides facing each other and two second sides facing each other, and a width of the first side is greater than that of the second side, and the first side and the second side are orthogonal to each other,

wherein the first electrode includes a first pad electrode and a first branched electrode extended from the first pad,

wherein the second electrode includes a second pad electrode and a second branched electrode extended from the second pad,

wherein a distance between the first branched electrode and the second branched electrode is ⅙

to ½

of the width of any one of the second sides,

wherein a distance between the second branched electrode and a nearest one of the first sides to the second branched electrode is ⅙

to ½

of the width of any one of the second sides,

wherein the width of any one of the second sides is less than 300 μ

m, and

wherein the distance between the first branched electrode and the second branched electrode is less than 110 μ

m.

20. The light emitting device of claim 19, wherein an area of the first conductive semiconductor layer is 300,000 μ

m² or less.

21. The light emitting device of claim 19, wherein the width of any one of the second sides is 200 to 300 μ

m, and

wherein the distance between the first branched electrode and the second branched electrode is less than 90 μ

m to 110 μ

m.