Light-emitting element and light-emitting device

• US 10,497,894 B2
• Filed: 05/29/2018
• Issued: 12/03/2019
• Est. Priority Date: 09/30/2004
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Kumaki, Daisuke, Seo, Satoshi
• Primary Examiner(s): Cao, Phat X
• Application Number:
  US15/991,579
• Publication Number:
  US 20180277789A1
• Time in Patent Office: 553 Days
• CPC Class Codes: H10K 2102/101 comprising transparent conductive oxides [TCO]
• CPC Class Codes: H10K 2102/102 comprising tin oxides, e.g. fluorine-doped SnO2
• CPC Class Codes: H10K 2102/103 comprising indium oxides, e.g. ITO
• CPC Class Codes: H10K 2102/351 Thickness
• CPC Class Codes: H10K 50/14 Carrier transporting layers
• CPC Class Codes: H10K 50/15 Hole transporting layers
• CPC Class Codes: H10K 50/165 comprising dopants
• CPC Class Codes: H10K 50/805 Electrodes
• CPC Class Codes: H10K 50/828 Transparent cathodes, e.g. comprising thin metal layers
• CPC Class Codes: H10K 50/852 comprising a resonant cavity structure, e.g. Bragg reflector pair
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays
• CPC Class Codes: H10K 59/805 Electrodes
• CPC Class Codes: Y02E 10/549 Organic PV cells

Abstract

It is an object of the present invention to provide a light-emitting element having a layer containing a light-emitting material and a transparent conductive film between a pair of electrodes, in which electric erosion of the transparent conductive film and metal can be prevented, and also to provide a light-emitting device using the light-emitting element. According to one feature of the invention, a light-emitting element includes a first layer 102 containing a light-emitting material, a second layer 103 containing a material having a donor level, a third layer 104 including a transparent conductive film, and a fourth layer 105 containing a hole-transporting medium between a first electrode 101 and a second electrode 106, in which the first layer 102, the second layer 103, the third layer 104, the fourth layer 105, and the second electrode 106 are provided sequentially, in which the second electrode 106 has a layer containing metal.

Claims

1. A light-emitting device comprising:

an electrode;

a first layer over the electrode, the first layer comprising a light-emitting material;

a second layer over and in direct contact with the first layer, the second layer comprising an organic compound doped with an electron-supplying material;

a transparent conductive layer over and in direct contact with the second layer; and

a third layer over and in direct contact with the transparent conductive layer, the third layer comprising a carrier transporting medium,

wherein each of the second layer and the transparent conductive layer has a single layer structure,

wherein the transparent conductive layer comprises a material, the material being included in a bottom part of the transparent conductive layer and an upper part of the transparent conductive layer,

wherein the bottom part is in direct contact with the second layer and the upper part is in direct contact with the third layer, and

wherein the light-emitting device does not include any layer comprising an organic material over the third layer.

2. The light-emitting device according to claim 1, wherein the organic compound is an electron-transporting material.

3. The light-emitting device according to claim 1, wherein the electron-supplying material is selected from an alkali metal, an alkali-earth metal, and a rare-earth metal.

4. The light-emitting device according to claim 1, wherein the carrier transporting medium is a hole-transporting medium.

5. The light-emitting device according to claim 1, wherein the material in the transparent conductive layer is selected from the group consisting of indium tin oxide, tin oxide, and indium oxide.

6. An electronic device comprising the light-emitting device according to claim 1.

7. A light-emitting device comprising:

an electrode;

a first layer over the electrode, the first layer comprising a light-emitting material;

a second layer over and in direct contact with the first layer, the second layer comprising a first organic compound doped with an electron-supplying material;

a transparent conductive layer over and in direct contact with the second layer; and

a third layer over and in direct contact with the transparent conductive layer, the third layer comprising a carrier transporting material containing a second organic compound,

wherein each of the second layer and the transparent conductive layer has a single layer structure,

wherein the transparent conductive layer comprises a material, the material being included in a bottom part of the transparent conductive layer and an upper part of the transparent conductive layer,

wherein the bottom part is in direct contact with the second layer and the upper part is in direct contact with the third layer, and

wherein the light-emitting device does not include any layer comprising an organic material over the third layer.

8. The light-emitting device according to claim 7, wherein the first organic compound is an electron-transporting material.

9. The light-emitting device according to claim 7, wherein the electron-supplying material is selected from an alkali metal, an alkali-earth metal, and a rare-earth metal.

10. The light-emitting device according to claim 7, wherein the carrier transporting material is a hole-transporting material.

11. The light-emitting device according to claim 7, wherein the second organic compound is doped with a metal oxide selected from molybdenum oxide, vanadium oxide, and rhenium oxide.

12. The light-emitting device according to claim 7, further comprising a conductive layer over the third layer.

13. An electronic device comprising the light-emitting device according to claim 7.

14. The light-emitting device according to claim 7, wherein the material in the transparent conductive layer is selected from the group consisting of indium tin oxide, tin oxide, and indium oxide.