System and method for a driving a radio frequency switch

• US 10,498,332 B2
• Filed: 04/17/2018
• Issued: 12/03/2019
• Est. Priority Date: 04/02/2014
• Status: Active Grant

• Current Assignee: Infineon Technologies AG
• Original Assignee: Infineon Technologies AG
• Inventors: Bakalski, Winfried, Thomas, Anthony
• Primary Examiner(s): Nguyen, Hai L
• Application Number:
  US15/955,272
• Publication Number:
  US 20180234094A1
• Time in Patent Office: 595 Days
• CPC Class Codes: H03K 17/6872 using complementary field-effect transistors
• CPC Class Codes: H03K 17/693 Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors logic circuits H03K19/00; code converters H03M5/00, H03M7/00

Abstract

In accordance with an embodiment, a radio frequency (RF) switching circuit includes a plurality of series connected RF switch cells having a load path and a control node, and a switch driver coupled to the control node. Each of the plurality of series connected RF switch cells includes a switch transistor and a gate resistor having a first end coupled to a gate of the switch transistor and a second end coupled to the control node. The switch driver includes a variable output impedance that varies with a voltage of the control node.

Claims

1. A radio frequency integrated circuit (RFIC) comprising:

a first RF switch disposed on a semiconductor substrate, the first RF switch having a load path coupled between a first terminal and a second terminal; and

a first RF switch driver coupled to a first control node of the first RF switch, the first RF switch driver comprising a first current source coupled between a first reference node and the first control node and a second current source coupled between a second reference node and the first control node,

wherein the first current source comprises a first current mirror, and the second current source comprises a second current mirror.

2. The RFIC of claim 1, further comprising:

a second RF switch disposed on the semiconductor substrate, the second RF switch comprising a load terminal coupled between the second terminal and a third terminal; and

a second RF switch driver coupled to a second control node of the second RF switch, the second RF switch driver comprising a third current source coupled between the first reference node and the second control node and a fourth current source coupled between the second reference node and the second control node.

3. The RFIC of claim 1, wherein the first current source and the second current source are configured to have a higher output impedance when a voltage of the first control node of the first RF switch is being charged than when the voltage of the first control node of the first RF switch is settled.

4. The RFIC of claim 1, wherein the first current mirror comprises a first stacked current mirror and the second current source comprises a second stacked current mirror.

5. The RFIC of claim 1, further comprising:

a switching logic circuit;

a first series resistor coupled between a first output of the switching logic circuit and an input of the first current mirror; and

a second series resistor coupled between a second output of the switching logic circuit and an input of the second current mirror.

6. The RFIC of claim 5, further comprising:

a first shutoff switch coupled in series with the first series resistor;

a second shutoff switch coupled in series with the second series resistor;

a first comparator configured to compare a voltage of the first control node to a first threshold voltage and to turn off the first shutoff switch when the voltage of the first control node crosses the first threshold voltage in a first direction; and

a second comparator configured to compare the voltage of the first control node to a second threshold voltage and to turn off the second shutoff switch when the voltage of the first control node crosses the second threshold voltage in a second direction opposite the first direction.

7. The RFIC of claim 6, wherein:

the first shutoff switch comprises a first transistor; and

the second shutoff switch comprises a second transistor.

8. The RFIC of claim 5, wherein the switching logic circuit comprises a Schmitt trigger coupled to a level shifter, wherein the level shift comprises a first output coupled to the first output of the switching logic circuit and a second output coupled to the second output of the switching logic circuit.

9. The RFIC of claim 1, wherein the first RF switch comprises a plurality of series connected RF switch cells comprising a load path and a control node, wherein each of the plurality of series connected RF switch cells comprises a switch transistor and a gate resistor having a first end coupled to a gate of the switch transistor and a second end coupled to the control node.

10. A radio frequency (RF) switching circuit comprising:

an RF switch having a load path coupled between a first terminal an a second terminal;

a current source having a current output coupled to a control node of the RF switch, and a control input, the current source configured to source a first current when the control input transitions to a first state, and configured to sink a second current when the control input transitions to a second state different from the first state;

a switching logic circuit having an output coupled to the control input of the current source; and

a monitoring circuit having an input coupled to the control node of the RF switch, and an output coupled to a second control input of the current source, wherein the current source is further configured to;

reduce the first current when the monitoring circuit detects that that a voltage of the control node of the RF switch crosses a first threshold voltage, and

reduce the second current when the monitoring circuit detects that the voltage of the control node of the RF switch crosses a second threshold voltage different from the first threshold voltage.

11. The RF switching circuit of claim 10, wherein the monitoring circuit comprises:

a first comparator having a first input coupled to the control node of the RF switch, a second input having an input coupled to a node configured to provide a voltage proportional to the first threshold voltage, and a first comparator output coupled to the current source; and

a second comparator having a first input coupled to the control node of the RF switch, a second input having an input coupled to a node configured to provide a voltage proportional to the second threshold voltage, and a second comparator output coupled to the current source.

12. The RF switching circuit of claim 11, wherein the current source comprises:

a first current mirror coupled between the switching logic circuit and the control node of the RF switch;

a first switch coupled in series with the first current mirror, the first switch having a first switch control node coupled to the first comparator output;

a second current mirror coupled between the switching logic circuit and the control node of the RF switch; and

a second switch coupled in series with the second current mirror, the second switch having a second switch control node coupled to the second comparator output.

13. The RF switching circuit of claim 10, wherein the current source is further configured to have a higher output impedance when a voltage of the control node of the RF switch is being charged than when the voltage of the control node of the RF switch is settled.

14. A method of operating a radio frequency integrated circuit (RFIC) comprising a first RF switch disposed on a semiconductor substrate, the first RF switch having a load path coupled between a first terminal and a second terminal;

and a first RF switch driver coupled to a first control node of the first RF switch, the first RF switch driver comprising a first current source coupled between a first reference node and the first control node and a second current source coupled between a second reference node and the first control node, the method comprising;

turning on the first RF switch, turning on the first RF switch comprising activating the first current source and deactivating the second current source;

turning off the first RF switch, turning off the first RF switch comprising activating the second current source and deactivating the first current source, and

monitoring a voltage of the first control node of the first RF switch, wherein;

turning on the first RF switch further comprises reducing a current of the first current source from a first current to a second current when a voltage of the first control node of the first RF switch crosses a first threshold voltage; and

turning off the first RF switch further comprises reducing a current of the second current source from a third current to a fourth current when a voltage of the first control node of the first RF switch crosses a second threshold voltage different from the first threshold voltage.

15. The method of claim 14, wherein the second current and the fourth current are zero.

16. The method of claim 14, wherein:

the first current source comprises a first current mirror;

the second current source comprises a second current mirror;

turning on the first RF switch comprises applying a turn-on current to the first current mirror; and

turning off the first RF switch comprises applying a turn-off current to the second current mirror.

17. The method of claim 14, further comprising providing a higher output impedance to the first control node of the first RF switch when a voltage of the first control node of the first RF switch is being charged than when the voltage of the first control node of the first RF switch is settled.