Semiconductor device, method for manufacturing semiconductor device, tire, and moving object
First Claim
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1. A tire comprising a semiconductor device, the semiconductor device comprising:
- a circuit portion comprising a transistor;
an antenna electrically connected to the circuit portion; and
a sensor element electrically connected to the circuit portion,wherein the transistor comprises;
a first gate electrode;
a first insulating layer over the first gate electrode;
an oxide semiconductor layer over the first insulating layer;
a source electrode and a drain electrode over and in contact with the oxide semiconductor layer;
a second insulating layer over the source electrode and the drain electrode; and
a second gate electrode over the second insulating layer,wherein the oxide semiconductor layer comprises indium and zinc, andwherein the sensor element is configured to measure an air pressure of the tire.
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Abstract
To provide a circuit with low power consumption, a semiconductor device with low power consumption, a highly reliable semiconductor device, a tire whose performance is controlled, a moving object whose performance is controlled, or a moving object with a high degree of safety. A tire provided with a semiconductor device is provided. The semiconductor device includes a circuit portion, an antenna, and a sensor element. The circuit portion includes a transistor. The transistor includes an oxide semiconductor. The sensor element is configured to measure the air pressure of the tire.
124 Citations
6 Claims
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1. A tire comprising a semiconductor device, the semiconductor device comprising:
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a circuit portion comprising a transistor; an antenna electrically connected to the circuit portion; and a sensor element electrically connected to the circuit portion, wherein the transistor comprises; a first gate electrode; a first insulating layer over the first gate electrode; an oxide semiconductor layer over the first insulating layer; a source electrode and a drain electrode over and in contact with the oxide semiconductor layer; a second insulating layer over the source electrode and the drain electrode; and a second gate electrode over the second insulating layer, wherein the oxide semiconductor layer comprises indium and zinc, and wherein the sensor element is configured to measure an air pressure of the tire. - View Dependent Claims (2, 3)
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4. A semiconductor device comprising:
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a circuit portion comprising a transistor; an antenna electrically connected to the circuit portion; and a sensor element electrically connected to the circuit portion, wherein the semiconductor device is disposed in a sealed space, wherein the sensor element is configured to measure an air pressure of a tire, wherein the transistor comprises; a first gate electrode; a first insulating layer over the first gate electrode; an oxide semiconductor layer over the first insulating layer; a source electrode and a drain electrode over and in contact with the oxide semiconductor layer; a second insulating layer over the source electrode and the drain electrode; and a second gate electrode over the second insulating layer, and wherein the oxide semiconductor layer comprises indium and zinc. - View Dependent Claims (5, 6)
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Specification
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Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
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Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
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InventorsAtsumi, Tomoaki, Sakakura, Masayuki, Ohshima, Kazuaki
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Primary Examiner(s)Lau, Hoi C
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Application NumberUS16/030,961Publication NumberTime in Patent Office518 DaysField of Search340447, 340455, 73146, 731464, 731465, 731468, 327 91, 327 94, 327 96, 365149US Class CurrentCPC Class CodesB60C 23/009 having wheels on a trailerB60C 23/0428 using passive wheel mounted...B60C 23/0452 Antenna structure, control ...B60C 23/0454 Means for changing operatio...H01L 29/7869 having a semiconductor body...
