Semiconductor device, lighting device, and vehicle

• US 10,501,003 B2
• Filed: 07/14/2016
• Issued: 12/10/2019
• Est. Priority Date: 07/17/2015
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Kimura, Hajime, Yamazaki, Shunpei
• Primary Examiner(s): Le, Don P
• Application Number:
  US15/210,092
• Publication Number:
  US 20170019972A1
• Time in Patent Office: 1,244 Days
• Field of Search: 315 77
• CPC Class Codes: B60Q 1/00 Arrangement of optical signalling or lighting devices, the mounting or supporting thereof or circuits therefor for lighting vehicle interior B60Q3/00
• CPC Class Codes: F21S 41/141 Light emitting diodes [LED]
• CPC Class Codes: F21S 43/14 Light emitting diodes [LED]
• CPC Class Codes: H01L 28/20 Resistors
• CPC Class Codes: H10N 10/85 Thermoelectric active materials
• CPC Class Codes: H10N 19/00 Integrated devices, or assemblies of multiple devices, comprising at least one thermoelectric or thermomagnetic element covered by groups H10N10/00 - H10N15/00

Abstract

A novel semiconductor device is provided. The semiconductor device includes a first resistor and a second resistor. The first resistor and the second resistor are electrically connected in series. A resistance material of the first resistor includes a metal oxide, and a resistance material of the second resistor is different from the resistance material of the first resistor. The semiconductor device is configured to output a voltage corresponding to the resistance values of the first resistor and the second resistor. The voltage reflects the properties of the resistance materials of the first resistor and the second resistor. The semiconductor device may include a circuit for processing this voltage. In that case, the first resistor can be stacked over the circuit, resulting in the downsizing of the semiconductor device.

Claims

1. A semiconductor device comprising:

an insulating layer;

a first resistor over the insulating layer; and

a second resistor covered with the insulating layer,

wherein the insulating layer is between the first resistor and the second resistor,

wherein the first resistor and the second resistor are electrically connected in series,

wherein a resistance material of the first resistor includes a metal oxide,

wherein the metal oxide includes indium,

wherein a resistance material of the second resistor is different from the resistance material of the first resistor,

wherein a resistance value of the second resistor has high temperature dependence, and

wherein a resistance value of the first resistor has low temperature dependence.

2. The semiconductor device according to claim 1,

wherein the second resistor is a thermistor, a resistance thermometer, or a thermocouple.

3. The semiconductor device according to claim 1,

wherein the resistance material of the second resistor includes silicon.

4. The semiconductor device according to claim 1,

wherein the metal oxide includes zinc.

5. A vehicle comprising:

the semiconductor device according to claim 1; and

a car body.

6. The semiconductor device according to claim 1,

wherein the first resistor is a transistor.

7. The semiconductor device according to claim 1,

wherein the second resistor is a transistor.

8. The semiconductor device according to claim 1,

wherein the first resistor and the second resistor overlap each other.

9. A semiconductor device comprising:

an insulating layer;

a first circuit comprising;

a first resistor over the insulating layer; and

a second resistor covered with the insulating layer; and

a second circuit,

wherein the insulating layer is between the first resistor and the second resistor,

wherein a first terminal of the first resistor is electrically connected to a first terminal of the second resistor,

wherein a resistance material of the first resistor includes a metal oxide,

wherein the metal oxide includes indium, and

wherein a resistance material of the second resistor is different from the resistance material of the first resistor,

wherein a resistance value of the second resistor has high temperature dependence,

wherein a resistance value of the first resistor has low temperature dependence, and

wherein the second circuit is configured to process a voltage output from the first terminal of the first resistor and generate a signal.

10. The semiconductor device according to claim 9, further comprising an electronic component,

wherein the electronic component includes a package and a die placed in the package, and

wherein the first resistor and the second circuit are provided in the die.

11. The semiconductor device according to claim 9, further comprising an electronic component,

wherein the electronic component includes a package and a die placed in the package, and

wherein the first resistor, the second resistor, and the second circuit are provided in the die.

12. The semiconductor device according to claim 9,

wherein the second resistor is a thermistor, a resistance thermometer, or a thermocouple.

13. The semiconductor device according to claim 9,

wherein the resistance material of the second resistor includes silicon.

14. The semiconductor device according to claim 9,

wherein the first resistor is stacked over the second circuit.

15. The semiconductor device according to claim 9,

wherein the metal oxide includes zinc.

16. The semiconductor device according to claim 9,

wherein a first voltage is configured to be input to a second terminal of the first resistor, and

wherein a second voltage which is lower than the first voltage is configured to be input to a second terminal of the second resistor.

17. A vehicle comprising:

the semiconductor device according to claim 9; and

a car body.

18. A semiconductor device comprising:

an insulating layer;

a first circuit comprising;

a first resistor over the insulating layer; and

a second resistor covered with the insulating layer;

a second circuit electrically connected to the first circuit;

a voltage generation circuit electrically connected to the second circuit; and

an LED electrically connected to the voltage generation circuit,

wherein the insulating layer is between the first resistor and the second resistor,

wherein a first terminal of the first resistor is electrically connected to a first terminal of the second resistor,

wherein a resistance material of the first resistor includes a metal oxide,

wherein the metal oxide includes indium, and

wherein a resistance material of the second resistor is different from the resistance material of the first resistor,

wherein a resistance value of the second resistor has high temperature dependence, wherein a resistance value of the first resistor has low temperature dependence,

wherein the first circuit is configured to output a voltage corresponding to the resistance values of the first resistor and the second resistor,

wherein the second circuit is configured to generate a signal in accordance with the voltage output from the first circuit, and

wherein the voltage generation circuit is configured to output a voltage for driving the LED in accordance with the signal.

19. The semiconductor device according to claim 18,

wherein the second resistor is a thermistor, a resistance thermometer, or a thermocouple.

20. The semiconductor device according to claim 18,

wherein the resistance material of the second resistor includes silicon.

21. The semiconductor device according to claim 18,

wherein the first resistor is stacked over the second circuit.

22. The semiconductor device according to claim 18,

wherein the metal oxide includes zinc.

23. The semiconductor device according to claim 18,

wherein a first voltage is configured to be input to a second terminal of the first resistor, and

wherein a second voltage which is lower than the first voltage is configured to be input to a second terminal of the second resistor.

24. A vehicle comprising:

the semiconductor device according to claim 18; and

a car body.