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Gas distribution apparatus for improved film uniformity in an epitaxial system

  • US 10,501,866 B2
  • Filed: 01/19/2017
  • Issued: 12/10/2019
  • Est. Priority Date: 03/09/2016
  • Status: Active Grant
First Claim
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1. A reaction system for processing a substrate, comprising:

  • a reaction chamber, the reaction chamber holding a wafer to be processed;

    a gas source;

    an inlet gas feed line having a first diameter and configured to receive a gas from the gas source;

    a pair of symmetrical feeds, the symmetrical feeds configured to split a flow of the gas from the inlet gas feed line;

    an expansion plenum having a second diameter greater than the first diameter and a plurality of outlet ports, wherein the expansion plenum receives gas from the pair of symmetrical feeds; and

    a plurality of valves interposed between the expansion plenum and the reaction chamber, the plurality of valves configured to control flow of the gas from the plurality of outlet ports into the reaction chamber; and

    wherein the plurality of valves maintains a substantially equalized pressure across the plurality of outlet ports.

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