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Plasma etching systems and methods with secondary plasma injection

  • US 10,504,700 B2
  • Filed: 08/27/2015
  • Issued: 12/10/2019
  • Est. Priority Date: 08/27/2015
  • Status: Active Grant
First Claim
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1. An apparatus for plasma processing, comprising:

  • a gas source;

    a first planar electrode comprising a first plate that defines a plurality of first apertures therethrough, a first side of the first planar electrode being configured with the gas source such that one or more gases from the gas source can pass through the plurality of first apertures to a second side of the first planar electrode;

    a second planar electrode comprising a second plate that defines a plurality of second apertures therethrough, a first side of the second planar electrode being disposed facing the second side of the first planar electrode;

    a first power supply configured to couple a first radio frequency (RF) power across the first planar electrode and the second planar electrode, wherein when the one or more gases pass through the plurality of first apertures and the first RF power couples across the first planar electrode and the second planar electrode,a first plasma is generated, from the one or more gases, between the first planar electrode and the second planar electrode, andfirst plasma products from the first plasma pass through the plurality of second apertures to a second side of the second planar electrode;

    a plasma blocking screen comprising a third planar electrode that defines a plurality of third apertures therethrough, a first side of the plasma blocking screen being disposed facing the second side of the second planar electrode such that the first plasma products can pass through the plurality of third apertures to a second side of the plasma blocking screen;

    a chuck that faces the second side of the plasma blocking screen, defining a process chamber between the plasma blocking screen and the chuck;

    a lift plate that surrounds the chuck in the plane of an upper surface of the chuck, wherein;

    the lift plate forms a radially inward portion, the plasma blocking screen being mechanically and electrically connected with an upward face of the radially inward portion;

    the lift plate forms an uppermost surface disposed above the radially inward portion; and

    the first electrode and the second electrode are supported by the uppermost surface, such that lifting the lift plate away from the chuck lifts the first, second and third electrodes away from the chuck; and

    a second power supply that couples a second radio frequency (RF) power across the plasma blocking screen and the chuck, wherein when the one or more gases pass through the plurality of first apertures, the first RF power couples across the first planar electrode and the second planar electrode, and the second RF power couples across the plasma blocking screen and the chuck so that a second plasma is generated, from the one or more gases, between the plasma blocking screen and the chuck.

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