Plasma etching systems and methods with secondary plasma injection
First Claim
1. An apparatus for plasma processing, comprising:
- a gas source;
a first planar electrode comprising a first plate that defines a plurality of first apertures therethrough, a first side of the first planar electrode being configured with the gas source such that one or more gases from the gas source can pass through the plurality of first apertures to a second side of the first planar electrode;
a second planar electrode comprising a second plate that defines a plurality of second apertures therethrough, a first side of the second planar electrode being disposed facing the second side of the first planar electrode;
a first power supply configured to couple a first radio frequency (RF) power across the first planar electrode and the second planar electrode, wherein when the one or more gases pass through the plurality of first apertures and the first RF power couples across the first planar electrode and the second planar electrode,a first plasma is generated, from the one or more gases, between the first planar electrode and the second planar electrode, andfirst plasma products from the first plasma pass through the plurality of second apertures to a second side of the second planar electrode;
a plasma blocking screen comprising a third planar electrode that defines a plurality of third apertures therethrough, a first side of the plasma blocking screen being disposed facing the second side of the second planar electrode such that the first plasma products can pass through the plurality of third apertures to a second side of the plasma blocking screen;
a chuck that faces the second side of the plasma blocking screen, defining a process chamber between the plasma blocking screen and the chuck;
a lift plate that surrounds the chuck in the plane of an upper surface of the chuck, wherein;
the lift plate forms a radially inward portion, the plasma blocking screen being mechanically and electrically connected with an upward face of the radially inward portion;
the lift plate forms an uppermost surface disposed above the radially inward portion; and
the first electrode and the second electrode are supported by the uppermost surface, such that lifting the lift plate away from the chuck lifts the first, second and third electrodes away from the chuck; and
a second power supply that couples a second radio frequency (RF) power across the plasma blocking screen and the chuck, wherein when the one or more gases pass through the plurality of first apertures, the first RF power couples across the first planar electrode and the second planar electrode, and the second RF power couples across the plasma blocking screen and the chuck so that a second plasma is generated, from the one or more gases, between the plasma blocking screen and the chuck.
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Accused Products
Abstract
An apparatus for plasma processing includes a first plasma source, a first planar electrode, a gas distribution device, a plasma blocking screen and a workpiece chuck. The first plasma source produces first plasma products that pass, away from the first plasma source, through first apertures in the first planar electrode. The first plasma products continue through second apertures in the gas distribution device. The plasma blocking screen includes a third plate with fourth apertures, and faces the gas distribution device such that the first plasma products pass through the plurality of fourth apertures. The workpiece chuck faces the second side of the plasma blocking screen, defining a process chamber between the plasma blocking screen and the workpiece chuck. The fourth apertures are of a sufficiently small size to block a plasma generated in the process chamber from reaching the gas distribution device.
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Citations
20 Claims
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1. An apparatus for plasma processing, comprising:
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a gas source; a first planar electrode comprising a first plate that defines a plurality of first apertures therethrough, a first side of the first planar electrode being configured with the gas source such that one or more gases from the gas source can pass through the plurality of first apertures to a second side of the first planar electrode; a second planar electrode comprising a second plate that defines a plurality of second apertures therethrough, a first side of the second planar electrode being disposed facing the second side of the first planar electrode; a first power supply configured to couple a first radio frequency (RF) power across the first planar electrode and the second planar electrode, wherein when the one or more gases pass through the plurality of first apertures and the first RF power couples across the first planar electrode and the second planar electrode, a first plasma is generated, from the one or more gases, between the first planar electrode and the second planar electrode, and first plasma products from the first plasma pass through the plurality of second apertures to a second side of the second planar electrode; a plasma blocking screen comprising a third planar electrode that defines a plurality of third apertures therethrough, a first side of the plasma blocking screen being disposed facing the second side of the second planar electrode such that the first plasma products can pass through the plurality of third apertures to a second side of the plasma blocking screen; a chuck that faces the second side of the plasma blocking screen, defining a process chamber between the plasma blocking screen and the chuck; a lift plate that surrounds the chuck in the plane of an upper surface of the chuck, wherein; the lift plate forms a radially inward portion, the plasma blocking screen being mechanically and electrically connected with an upward face of the radially inward portion; the lift plate forms an uppermost surface disposed above the radially inward portion; and the first electrode and the second electrode are supported by the uppermost surface, such that lifting the lift plate away from the chuck lifts the first, second and third electrodes away from the chuck; and a second power supply that couples a second radio frequency (RF) power across the plasma blocking screen and the chuck, wherein when the one or more gases pass through the plurality of first apertures, the first RF power couples across the first planar electrode and the second planar electrode, and the second RF power couples across the plasma blocking screen and the chuck so that a second plasma is generated, from the one or more gases, between the plasma blocking screen and the chuck. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. An apparatus for plasma processing, comprising:
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a process chamber that is defined laterally by one or more sidewalls, wherein the one or more sidewalls extend vertically, from below a chuck disposed within the process chamber, and terminate at upwardly facing surfaces that lie in a single horizontal plane; a plasma source configured for generating first plasma products from one or more source gases, wherein the plasma source passes the first plasma products downwardly through first apertures of a planar electrode; a plasma blocking screen that defines a plurality of second apertures therethrough, a first side of the plasma blocking screen being disposed facing the planar electrode such that the first plasma products pass through the plurality of second apertures to a second side of the plasma blocking screen; a lift plate that is mechanically independent from the one or more sidewalls, and is configured to lift the plasma source and the plasma blocking screen upwards and away from the sidewalls, wherein the lift plate comprises an outermost element and an inward portion, wherein; the outermost element forms an uppermost surface and a lowermost surface; the uppermost surface is configured to support the plasma source and to lift the plasma source away from underlying structure when the lift plate is lifted; the lowermost surface is configured to rest upon the upwardly facing surfaces of the one or more sidewalls at the single horizontal plane; the inward portion is integrally formed with and extends radially inward from the outermost element; the inward portion forms an upper surface that is lower than the uppermost surface, radially inward face and a lower surface, and the plasma blocking screen rests atop, and is electrically connected with, the upper surface of the inward portion of the lift plate; the apparatus further comprising;
the chuck, wherein the chuck faces the second side of the plasma blocking screen. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20)
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Specification