Thick tungsten hardmask films deposition on high compressive/tensile bow wafers
First Claim
1. A method of forming a hardmask layer on a substrate comprising:
- applying a chucking voltage to a substrate positioned on an electrostatic chuck in a processing chamber;
forming a seed layer comprising boron on a film stack disposed on the substrate by supplying a seed layer gas mixture in the processing chamber while maintaining the chucking voltage, wherein the seed layer gas mixture comprises at least a boron-based precursor gas and a nitrogen-based precursor gas;
forming a transition layer comprising boron and tungsten on the seed layer by supplying a transition layer gas mixture in the processing chamber, wherein supplying the transition layer gas mixture comprises;
ramping down a gas flow rate of the boron-based precursor gas while maintaining a steady gas flow rate of the nitrogen-based precursor gas; and
supplying a tungsten-based precursor gas; and
forming a bulk hardmask layer on the transition layer by supplying a main deposition gas mixture in the processing chamber.
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Abstract
Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of thick hardmask films on a substrate. In one implementation, a method of forming a hardmask layer on a substrate is provided. The method comprises applying a chucking voltage to a substrate positioned on an electrostatic chuck in a processing chamber, forming a seed layer comprising boron on a film stack disposed on a substrate by supplying a seed layer gas mixture in the processing chamber while maintaining the chucking voltage, forming a transition layer comprising boron and tungsten on the seed layer by supplying a transition layer gas mixture in the processing chamber and forming a bulk hardmask layer on the transition layer by supplying a main deposition gas mixture in the processing chamber.
23 Citations
20 Claims
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1. A method of forming a hardmask layer on a substrate comprising:
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applying a chucking voltage to a substrate positioned on an electrostatic chuck in a processing chamber; forming a seed layer comprising boron on a film stack disposed on the substrate by supplying a seed layer gas mixture in the processing chamber while maintaining the chucking voltage, wherein the seed layer gas mixture comprises at least a boron-based precursor gas and a nitrogen-based precursor gas; forming a transition layer comprising boron and tungsten on the seed layer by supplying a transition layer gas mixture in the processing chamber, wherein supplying the transition layer gas mixture comprises; ramping down a gas flow rate of the boron-based precursor gas while maintaining a steady gas flow rate of the nitrogen-based precursor gas; and supplying a tungsten-based precursor gas; and forming a bulk hardmask layer on the transition layer by supplying a main deposition gas mixture in the processing chamber. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 20)
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14. A method of forming a hardmask layer on a substrate comprising:
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applying a chucking voltage to a substrate positioned on an electrostatic chuck in a processing chamber; forming a seed layer comprising boron on a film stack disposed on the substrate by; supplying a seed layer gas mixture in the processing chamber while maintaining the chucking voltage, wherein the seed layer gas mixture comprises at least a boron-based precursor gas and a nitrogen-based precursor gas; and steadily supplying the nitrogen-based precursor gas and varying a flow of the boron-based precursor gas in the processing chamber to form the seed layer; forming a transition layer comprising boron and tungsten on the seed layer by supplying a transition layer gas mixture in the processing chamber, wherein supplying the transition layer gas mixture comprises; ramping down a gas flow rate of the boron-based precursor gas while maintaining a steady gas flow rate of the nitrogen-based precursor gas; and supplying a tungsten-based precursor gas; and forming a bulk hardmask layer on the transition layer by supplying a main deposition gas mixture in the processing chamber. - View Dependent Claims (15, 16, 17, 18)
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19. A method of forming a hardmask layer on a substrate comprising:
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applying a chucking voltage to a substrate positioned on an electrostatic chuck in a processing chamber; forming a boron nitride layer on a film stack disposed on the substrate by supplying a seed layer gas mixture in the processing chamber while maintaining the chucking voltage, wherein the seed layer gas mixture comprises at least a boron-based precursor gas and a nitrogen-based precursor gas; forming a boron tungsten nitride layer on the boron nitride layer by supplying a transition layer gas mixture in the processing chamber, wherein supplying the transition layer gas mixture comprises; ramping down a gas flow rate of the boron-based precursor gas while maintaining a steady gas flow rate of the nitrogen-based precursor gas; and supplying a tungsten-based precursor gas; and forming a tungsten nitride layer on the boron nitride layer by supplying a main deposition gas mixture in the processing chamber.
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Specification