Devices including gate spacer with gap or void and methods of forming the same
First Claim
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1. A semiconductor device comprising:
- an isolation region surrounding a semiconductor fin;
an interlayer dielectric extending away from the isolation region in a first direction;
a first dielectric material extending away from the isolation region in the first direction, the first dielectric material being separated from the interlayer dielectric by an etch stop layer;
a second dielectric material over the first dielectric material, the second dielectric material being separated from the interlayer dielectric by the etch stop layer;
a void located within the second dielectric material; and
a gate located over the semiconductor fin and being located on an opposite side of the void from the interlayer dielectric.
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Abstract
Devices and structures that include a gate spacer having a gap or void are described along with methods of forming such devices and structures. In accordance with some embodiments, a structure includes a substrate, a gate stack over the substrate, a contact over the substrate, and a spacer disposed laterally between the gate stack and the contact. The spacer includes a first dielectric sidewall portion and a second dielectric sidewall portion. A void is disposed between the first dielectric sidewall portion and the second dielectric sidewall portion.
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Citations
20 Claims
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1. A semiconductor device comprising:
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an isolation region surrounding a semiconductor fin; an interlayer dielectric extending away from the isolation region in a first direction; a first dielectric material extending away from the isolation region in the first direction, the first dielectric material being separated from the interlayer dielectric by an etch stop layer; a second dielectric material over the first dielectric material, the second dielectric material being separated from the interlayer dielectric by the etch stop layer; a void located within the second dielectric material; and a gate located over the semiconductor fin and being located on an opposite side of the void from the interlayer dielectric. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A semiconductor device comprising:
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a void encircling a first region over a semiconductor fin; a gate electrode located within the first region and over the semiconductor fin; a contact located on an opposite side of the void from the first region, the contact having a straight sidewall; and a first dielectric material separating the void from the contact, wherein at least a portion of an interface between the first dielectric material and the contact is straight. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. A semiconductor device comprising:
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a dielectric cap over a gate electrode, the gate electrode being located over a semiconductor fin; a dielectric spacer extending between the dielectric cap and a contact to a source/drain region; and a void located between the semiconductor fin and at least a portion of the dielectric spacer. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification