Semiconductor device has an oxide semiconductor layer containing a c-axis aligned crystal
First Claim
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1. A semiconductor device comprising:
- an oxide semiconductor layer comprising channel formation region including a crystalline region over a substrate,wherein the oxide semiconductor layer comprises indium, gallium, and zinc, andwherein the crystalline region has c-axis aligned in a direction substantially perpendicular to a surface of the oxide semiconductor layer.
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Abstract
A semiconductor device includes an oxide semiconductor layer including a crystalline region over an insulating surface, a source electrode layer and a drain electrode layer in contact with the oxide semiconductor layer, a gate insulating layer covering the oxide semiconductor layer, the source electrode layer, and the drain electrode layer, and a gate electrode layer over the gate insulating layer in a region overlapping with the crystalline region. The crystalline region includes a crystal whose c-axis is aligned in a direction substantially perpendicular to a surface of the oxide semiconductor layer.
169 Citations
12 Claims
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1. A semiconductor device comprising:
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an oxide semiconductor layer comprising channel formation region including a crystalline region over a substrate, wherein the oxide semiconductor layer comprises indium, gallium, and zinc, and wherein the crystalline region has c-axis aligned in a direction substantially perpendicular to a surface of the oxide semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A semiconductor device comprising:
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an oxide semiconductor layer comprising channel formation region including a crystalline region over a substrate, wherein the oxide semiconductor layer comprises indium, gallium, and zinc, and wherein the crystalline region comprises a plurality of crystals with c-axis substantially parallel to each other. - View Dependent Claims (8, 9, 10, 11, 12)
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Specification