Semiconductor device, method for manufacturing the same, and electronic device

• US 10,505,051 B2
• Filed: 05/02/2016
• Issued: 12/10/2019
• Est. Priority Date: 05/04/2015
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Ito, Daigo, Ishiyama, Takahisa, Tochibayashi, Katsuaki, Hanaoka, Kazuya
• Primary Examiner(s): Tran, Dzung
• Application Number:
  US15/144,123
• Publication Number:
  US 20160329434A1
• Time in Patent Office: 1,317 Days
• Field of Search: 257 43
• CPC Class Codes: H01L 21/67207 comprising a chamber adapted to a particular process
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/14621 Colour filter arrangements
• CPC Class Codes: H01L 27/14632 Wafer-level processed structures
• CPC Class Codes: H01L 27/1464 Back illuminated imager structures
• CPC Class Codes: H01L 29/045 by their particular orientation of crystalline planes
• CPC Class Codes: H01L 29/42384 for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/78621 with LDD structure or an extension or an offset region or characterised by the doping profile
• CPC Class Codes: H01L 29/78648 arranged on opposing sides of the channel
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 29/78693 the semiconducting oxide being amorphous
• CPC Class Codes: H01L 29/78696 characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621

Abstract

The semiconductor device includes a first insulating layer; a first oxide insulating layer over the first insulating layer; an oxide semiconductor layer over the first oxide insulating layer; a source electrode layer and a drain electrode layer over the oxide semiconductor layer; a second oxide insulating layer over the oxide semiconductor layer, the source electrode layer, and the drain electrode layer; a gate insulating layer over the second oxide insulating layer; a gate electrode layer over the gate insulating layer; a second insulating layer over the first insulating layer, the source electrode layer, the drain electrode layer, the second oxide insulating layer, the gate insulating layer, and the gate electrode layer; and a third insulating layer over the first insulating layer, the source electrode layer, the drain electrode layer, and the second insulating layer.

Claims

1. A semiconductor device comprising:

a first insulating layer;

a first oxide layer over the first insulating layer;

an oxide semiconductor layer over the first oxide layer;

a source electrode layer and a drain electrode layer over the oxide semiconductor layer;

a second oxide layer over the oxide semiconductor layer, the source electrode layer, and the drain electrode layer;

a gate insulating layer over the second oxide layer;

a gate electrode layer over the gate insulating layer;

a second insulating layer over the first insulating layer, the source electrode layer, the drain electrode layer, the second oxide layer, the gate insulating layer, and the gate electrode layer; and

a third insulating layer over the first insulating layer, the source electrode layer, the drain electrode layer, and the second insulating layer,

wherein the third insulating layer is in contact with a side surface of the second insulating layer and a top surface of the first insulating layer, and

wherein the second insulating layer comprises a region in contact with a side surface of the gate insulating layer.

2. The semiconductor device according to claim 1,

wherein the second insulating layer comprises at least one of aluminum, hafnium, and silicon.

3. The semiconductor device according to claim 1,

wherein the second insulating layer has a thickness of greater than or equal to 3 nm and less than or equal to 30 nm.

4. An electronic device comprising:

the semiconductor device according to claim 1;

a housing; and

a speaker.

17. The semiconductor device according to claim 1,

wherein the second insulating layer and the third insulating layer comprise aluminum oxide or hafnium oxide.

5. A semiconductor device comprising:

a first insulating layer;

a first oxide layer over the first insulating layer;

an oxide semiconductor layer over the first oxide layer;

a source electrode layer and a drain electrode layer over the oxide semiconductor layer;

a second oxide layer over the oxide semiconductor layer, the source electrode layer, and the drain electrode layer;

a gate insulating layer over the second oxide layer;

a gate electrode layer over the gate insulating layer;

a second insulating layer over the first insulating layer, the source electrode layer, the drain electrode layer, the second oxide layer, the gate insulating layer, and the gate electrode layer; and

a third insulating layer over the first insulating layer, the source electrode layer, the drain electrode layer, and the second insulating layer,

wherein the third insulating layer is in contact with a side surface of the second insulating layer and a top surface of the first insulating layer,

wherein the second insulating layer comprises a region in contact with a top surface of the gate insulating layer, and

wherein an end portion of the gate insulating layer when seen from above is distanced away from an end portion of the gate electrode layer by greater than or equal to 50 nm and less than or equal to 10 μ

m.

6. The semiconductor device according to claim 5,

wherein the second insulating layer comprises at least one of aluminum, hafnium, and silicon.

7. The semiconductor device according to claim 5,

wherein the second insulating layer has a thickness of greater than or equal to 3 nm and less than or equal to 30 nm.

8. An electronic device comprising:

the semiconductor device according to claim 5;

a housing; and

a speaker.

18. The semiconductor device according to claim 5,

wherein the second insulating layer and the third insulating layer comprise aluminum oxide or hafnium oxide.

9. A semiconductor device comprising:

a first insulating layer;

a first oxide layer over the first insulating layer;

an oxide semiconductor layer over the first oxide layer;

a second oxide layer over the oxide semiconductor layer;

a gate insulating layer over the second oxide layer;

a gate electrode layer over the gate insulating layer; and

a second insulating layer over the oxide semiconductor layer and the gate electrode layer; and

a third insulating layer over the second insulating layer,

wherein the third insulating layer is in contact with a side surface of the second insulating layer and a top surface of the first insulating layer,

wherein the oxide semiconductor layer comprises a first region, a second region, and a third region,

wherein the first region comprises a region overlapping with the gate electrode layer,

wherein the first region is a region between the second region and the third region,

wherein the second region and the third region have lower resistance than the first region, and

wherein the second insulating layer comprises a region in contact with a side surface of the gate insulating layer.

10. The semiconductor device according to claim 9,

wherein the second insulating layer comprises at least one of aluminum, hafnium, and silicon.

11. The semiconductor device according to claim 9,

wherein the second insulating layer has a thickness of greater than or equal to 3 nm and less than or equal to 30 nm.

12. An electronic device comprising:

the semiconductor device according to claim 9;

a housing; and

a speaker.

19. The semiconductor device according to claim 9,

wherein the second insulating layer and the third insulating layer comprise aluminum oxide or hafnium oxide.

13. A semiconductor device comprising:

a first oxide layer;

an oxide semiconductor layer over the first oxide layer;

a source electrode layer and a drain electrode layer over the oxide semiconductor layer;

a second oxide layer over the oxide semiconductor layer;

a first insulating layer over the source electrode layer and the drain electrode layer;

a gate insulating layer over the second oxide layer;

a gate electrode layer over the gate insulating layer;

a second insulating layer over the first insulating layer, the second oxide layer, the gate insulating layer, and the gate electrode layer; and

a third insulating layer over the second insulating layer,

wherein the first insulating layer comprises a groove portion reaching the oxide semiconductor layer,

wherein the second oxide layer, the gate insulating layer, and the gate electrode layer are provided along a side surface and a bottom surface of the groove portion,

wherein the third insulating layer is in contact with a side surface of the second insulating layer and a top surface of the first insulating layer,

wherein the second oxide layer comprises a region in contact with a side surface of the first insulating layer, and

wherein the second insulating layer comprises a region in contact with a side surface of the gate insulating layer.

14. The semiconductor device according to claim 13,

wherein the second insulating layer comprises at least one of aluminum, hafnium, and silicon.

15. The semiconductor device according to claim 13,

wherein the second insulating layer has a thickness of greater than or equal to 3 nm and less than or equal to 30 nm.

16. An electronic device comprising:

the semiconductor device according to claim 13;

a housing; and

a speaker.

20. The semiconductor device according to claim 13,

wherein the second insulating layer and the third insulating layer comprise aluminum oxide or hafnium oxide.