Photonic integration platform

• US 10,509,174 B2
• Filed: 08/01/2018
• Issued: 12/17/2019
• Est. Priority Date: 07/03/2013
• Status: Active Grant

• Current Assignee: Cisco Technology, Inc. (Cisco Systems, Inc.)
• Original Assignee: Cisco Technology, Inc. (Cisco Systems, Inc.)
• Inventors: Webster, Mark, Tummidi, Ravi Sekhar
• Primary Examiner(s): Kianni, Kaveh C
• Application Number:
  US16/052,524
• Publication Number:
  US 20180341064A1
• Time in Patent Office: 503 Days
• Field of Search: 385 14
• CPC Class Codes: G02B 2006/12038 Glass (SiO2 based materials)
• CPC Class Codes: G02B 2006/12061 Silicon
• CPC Class Codes: G02B 2006/121 Channel; buried or the like
• CPC Class Codes: G02B 2006/12147 Coupler
• CPC Class Codes: G02B 2006/12152 Mode converter
• CPC Class Codes: G02B 6/107 Subwavelength-diameter waveguides, e.g. nanowires
• CPC Class Codes: G02B 6/12 of the integrated circuit kind electric integrated circuits H01L27/00
• CPC Class Codes: G02B 6/12002 Three-dimensional structures
• CPC Class Codes: G02B 6/122 Basic optical elements, e.g. light-guiding paths
• CPC Class Codes: G02B 6/1228 Tapered waveguides, e.g. integrated spot-size transformers for coupling with fibres G02B6/305
• CPC Class Codes: G02B 6/132 by deposition of thin films
• CPC Class Codes: G02B 6/14 Mode converters
• CPC Class Codes: G02B 6/30 for use between fibre and thin-film device
• CPC Class Codes: G02B 6/305 and having an integrated mode-size expanding section, e.g. tapered waveguide
• CPC Class Codes: G02B 6/43 Arrangements comprising a plurality of opto-electronic elements and associated optical interconnections

Abstract

A SOI device may include a waveguide adapter that couples light between an external light source—e.g., a fiber optic cable or laser—and a silicon waveguide on the silicon surface layer of the SOI device. In one embodiment, the waveguide adapter is embedded into the insulator layer. Doing so may enable the waveguide adapter to be formed before the surface layer components are added onto the SOI device. Accordingly, fabrication techniques that use high-temperatures may be used without harming other components in the SOI device—e.g., the waveguide adapter is formed before heat-sensitive components are added to the silicon surface layer.

Claims

1. A SOI optical device, comprising:

a semiconductor substrate;

an insulation layer disposed on the substrate;

a crystalline silicon layer disposed on the insulation layer and comprising a silicon waveguide; and

a plurality of prongs configured to at least one of receive and transmit optical energy via a coupling surface of the SOI optical device,

wherein the plurality of prongs are positioned such that the optical energy transmitted by the plurality of prongs is transferred to the silicon waveguide,

wherein at least two prongs in the plurality of prongs are located in a first layer while another prong in the plurality of prongs is located in a second layer different from the first layer, and

wherein a dimension of the silicon waveguide changes as the silicon waveguide extends away from the coupling surface.

2. The SOI optical device of claim 1, wherein each of the plurality of prongs is surrounded by an insulative material such that none of the plurality of prongs directly contact.

3. The SOI optical device of claim 1, wherein the silicon waveguide is located between the insulation layer and the plurality of prongs, wherein a length of each of the plurality of prongs extending from the coupling surface is the same.

4. The SOI optical device of claim 1, wherein the plurality of prongs terminates at one of:

(i) the coupling surface and (ii) a plane recessed from and parallel to the coupling surface.

5. The SOI optical device of claim 1, wherein a dimension of the plurality of prongs reduces as the prongs extend in a direction away from the coupling surface, and wherein the dimension of the silicon waveguide increases as a first prong of the plurality of prongs extends away from the coupling surface, wherein at least one of the plurality of prongs overlaps the silicon waveguide such that an optical signal transmitted by the plurality of prongs is transferred to the silicon waveguide.

6. The SOI optical device of claim 5, wherein a length of at least one prong of the plurality of prongs in the direction that extends away from the coupling surface is greater than each of the respective lengths of the other prongs of the plurality of prongs.

7. The SOI optical device of claim 1, wherein each of the plurality of prongs is surrounded by an insulative material different from a material of the silicon waveguide.

8. The SOI optical device of claim 1, wherein the plurality of prongs is in a stacked relationship with the silicon waveguide.

9. The SOI optical device of claim 8, wherein at least one of the plurality of prongs directly overlaps the silicon waveguide.

10. A semiconductor chip, comprising:

a semiconductor substrate;

an insulation layer disposed on the substrate;

a crystalline silicon layer disposed on the insulation layer and comprising a silicon waveguide; and

a plurality of prongs configured to at least one of receive and transmit optical energy via a coupling surface of the semiconductor chip,

wherein the plurality of prongs are positioned such that the optical energy transmitted by the plurality of prongs is transferred to the silicon waveguide,

wherein at least two prongs in the plurality of prongs are located in a first layer while another prong in the plurality of prongs is located in a second layer different from the first layer, and

wherein a dimension of the silicon waveguide changes as the silicon waveguide extends away from the coupling surface.

11. The semiconductor chip of claim 10, wherein each of the plurality of prongs is surrounded by an insulative material such that none of the plurality of prongs directly contact.

12. The semiconductor chip of claim 10, wherein the silicon waveguide is located between the insulation layer and the plurality of prongs, wherein a length of each of the plurality of prongs extending from the coupling surface is the same.

13. The semiconductor chip of claim 10, wherein the plurality of prongs terminates at one of:

(i) the coupling surface and (ii) a plane recessed from and parallel to the coupling surface.

14. The semiconductor chip of claim 10, wherein a dimension of the plurality of prongs reduces as the prongs extend in a direction away from the coupling surface, and wherein the dimension of the silicon waveguide increases as a first prong of the plurality of prongs extends away from the coupling surface, wherein at least one of the plurality of prongs overlaps the silicon waveguide such that an optical signal transmitted by the plurality of prongs is transferred to the silicon waveguide.

15. The semiconductor chip of claim 14, wherein a length of at least one prong of the plurality of prongs in the direction that extends away from the coupling surface is greater than each of the respective lengths of the other prongs of the plurality of prongs.

16. The semiconductor chip of claim 10, wherein each of the plurality of prongs is surrounded by an insulative material different from a material of the silicon waveguide.

17. The semiconductor chip of claim 10, wherein the plurality of prongs is in a stacked relationship with the silicon waveguide.

18. The semiconductor chip of claim 17, wherein at least one of the plurality of prongs directly overlaps the silicon waveguide.

19. An optical device, comprising:

a semiconductor substrate;

an insulation layer disposed on the substrate;

a crystalline silicon waveguide disposed on the insulation layer; and

a plurality of prongs configured to at least one of receive and transmit optical energy via a coupling surface of the optical device,

wherein the plurality of prongs are positioned such that the optical energy transmitted by the plurality of prongs is transferred to the silicon waveguide,

wherein at least two prongs in the plurality of prongs are located in a first layer while another prong in the plurality of prongs is located in a second layer different from the first layer, and

wherein a dimension of the silicon waveguide changes as the silicon waveguide extends away from the coupling surface.

20. The optical device of claim 19, wherein each of the plurality of prongs is surrounded by an insulative material different from a material of the silicon waveguide.