Imprint resist with fluorinated photoinitiator and substrate pretreatment for reducing fill time in nanoimprint lithography

• US 10,509,313 B2
• Filed: 06/12/2017
• Issued: 12/17/2019
• Est. Priority Date: 06/28/2016
• Status: Active Grant

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Inventors: Liu, Weijun, Wan, Fen, Stachowiak, Timothy Brian
• Primary Examiner(s): Rodriguez, Michael P.
• Application Number:
  US15/620,621
• Publication Number:
  US 20170371240A1
• Time in Patent Office: 918 Days
• Field of Search: None
• CPC Class Codes: G03F 7/0002 Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
• CPC Class Codes: G03F 7/0046 with perfluoro compounds, e.g. for dry lithography G03F7/0048 takes precedence
• CPC Class Codes: G03F 7/027 Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds G03F7/075 takes precedence
• CPC Class Codes: G03F 7/029 Inorganic compounds; Onium compounds; Organic compounds having hetero atoms other than oxygen, nitrogen or sulfur
• CPC Class Codes: G03F 7/031 Organic compounds not covered by group G03F7/029

Abstract

A nanoimprint lithography method includes disposing a pretreatment composition including a polymerizable component on a substrate to form a pretreatment coating. Discrete imprint resist portions are disposed on the pretreatment coating, with each discrete portion of the imprint resist covering a target area of the substrate. The imprint resist is a polymerizable composition and includes a fluorinated photoinitiator. A composite polymerizable coating is formed on the substrate as each discrete portion of the imprint resist spreads beyond its target area. The composite polymerizable coating includes a mixture of the pretreatment composition and the imprint resist. The composite polymerizable coating is contacted with a template, and is polymerized to yield a composite polymeric layer on the substrate. The interfacial surface energy between the pretreatment composition and air exceeds the interfacial surface energy between the imprint resist and air or between at least a component of the imprint resist and air.

Claims

1. A nanoimprint lithography method comprising:

disposing a pretreatment composition on a nanoimprint lithography substrate to form a pretreatment coating on the nanoimprint lithography substrate, wherein the pretreatment composition comprises a first polymerizable component;

disposing discrete portions of imprint resist on the pretreatment coating, each discrete portion of the imprint resist covering a target area of the nanoimprint lithography substrate, wherein the imprint resist is a polymerizable composition and comprises a fluorinated photoinitiator;

forming a composite polymerizable coating on the nanoimprint lithography substrate as each discrete portion of the imprint resist spreads beyond its target area, wherein the composite polymerizable coating comprises a mixture of the pretreatment composition and the imprint resist;

contacting the composite polymerizable coating with a surface of a nanoimprint lithography template; and

polymerizing the composite polymerizable coating to yield a composite polymeric layer on the nanoimprint lithography substrate,

wherein the interfacial surface energy between the pretreatment composition and air exceeds the interfacial surface energy between the imprint resist and air by at least 0.5 mN/m.

2. The nanoimprint lithography method of claim 1, wherein the fluorinated photoinitiator comprises one of the following compounds, where R_f represents a fluorinated or perfluorinated group:

3. The nanoimprint lithography method of claim 1, wherein the fluorinated photoinitiator comprises one of the following compounds:

4. The nanoimprint lithography method of claim 1, wherein the fluorinated photoinitiator comprises 0.1 wt % to 10 wt % of the imprint resist exclusive of solvent.

5. The nanoimprint lithography method of claim 1, wherein the imprint resist comprises a nonfluorinated photoinitiator.

6. The nanoimprint lithography method of claim 5, wherein the nonfluorinated photoinitiator comprises one of the following compounds:

7. The nanoimprint lithography method of claim 5, wherein the fluorinated photoinitiator and the nonfluorinated photoinitiator together comprise 1 wt % to 10 wt % of the imprint resist exclusive of solvent.

8. The nanoimprint lithography method of claim 1, wherein the imprint resist comprises a fluorinated surfactant.

9. The nanoimprint lithography method of claim 1, wherein the imprint resist comprises a fluorinated polymerizable component.

10. The nanoimprint lithography method of claim 1, wherein the imprint resist comprises:

0 wt % to 80 wt %, 20 wt % to 80 wt %, or 40 wt % to 80 wt % of one or more monofunctional acrylates and 20 wt % to 98 wt % of one or more difunctional or multifunctional acrylates;

0.1 wt % to 10 wt % of the fluorinated photoinitiator; and

1 wt % to 10 wt % of one or more surfactants.

11. The nanoimprint lithography method of claim 1, wherein the pretreatment composition comprises a photoinitiator.

12. The nanoimprint lithography method of claim 1, wherein the imprint resist comprises a fluorinated polymerizable component and is free of fluorinated surfactant.

13. The nanoimprint lithography method of claim 12, wherein the fluorinated polymerizable component is a fluorinated acrylate.

14. The nanoimprint lithography method of claim 13, wherein the fluorinated acrylate has one of the following structures:

15. The nanoimprint lithography method of claim 14, wherein R is a perfluorinated alkyl group or a perfluorinated aryl group.

16. The nanoimprint lithography method of claim 1, wherein the imprint resist comprises a fluorinated surfactant and a fluorinated polymerizable component.

17. The nanoimprint lithography method of claim 16, wherein the interfacial surface energy between the fluorinated surfactant and air exceeds the interfacial surface energy between the fluorinated polymerizable component and air.

18. The nanoimprint lithography method of claim 1, wherein the imprint resist comprises a fluorinated surfactant and a non-fluorinated surfactant and is free of fluorinated polymerizable components.

19. The nanoimprint lithography method of claim 18, wherein the interfacial surface energy between the non-fluorinated surfactant and air exceeds the interfacial surface energy between the fluorinated surfactant and air.

20. The nanoimprint lithography method of claim 1, wherein the imprint resist comprises a second polymerizable component, and the interfacial surface energy between the second polymerizable component and air exceeds the interfacial surface energy between the fluorinated photoinitiator and air.

21. The nanoimprint lithography method of claim 1, wherein the imprint resist comprises two or more fluorinated photoinitiators.