Method of depositing a co-doped polysilicon film on a surface of a substrate within a reaction chamber

• US 10,510,536 B2
• Filed: 03/29/2018
• Issued: 12/17/2019
• Est. Priority Date: 03/29/2018
• Status: Active Grant

• Current Assignee: ASM IP Holding B.V. (ASM International NV)
• Original Assignee: ASM IP Holding B.V. (ASM International NV)
• Inventors: Kohen, David, Tolle, John
• Primary Examiner(s): Sarkar, Asok K
• Application Number:
  US15/940,801
• Publication Number:
  US 20190304780A1
• Time in Patent Office: 628 Days
• Field of Search: None
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02576 N-type
• CPC Class Codes: H01L 21/02579 P-type
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 21/02658 Pretreatments cleaning in general H01L21/02041
• CPC Class Codes: H01L 23/12 Mountings, e.g. non-detachable insulating substrates

Abstract

Methods for depositing a co-doped polysilicon film on a surface of a substrate within a reaction chamber are provided. The method may include: heating the substrate to a deposition temperature of less than 550° C.; simultaneously contacting the substrate with a silicon precursor, a n-type dopant precursor, and a p-type dopant precursor; and depositing the co-doped polysilicon film on the surface of the substrate. Related semiconductor structures are also disclosed.

Claims

1. A method of depositing a co-doped polysilicon film on a surface of a substrate within a reaction chamber, the method comprising:

heating the substrate to a deposition temperature of less than 550°

C.;

simultaneously contacting the substrate with a silicon precursor, a n-type dopant precursor, and a p-type dopant precursor; and

depositing the co-doped polysilicon film on the surface of the substrate,

wherein the deposited co-doped polysilicon film has a p-type dopant concentration greater than 1×

10¹⁸/cm³ and an n-type dopant concentration greater than 1×

10¹⁸/cm³.

2. The method of claim 1, wherein the silicon precursor comprises at least one of silane (SiH₄), disilane (Si₂H₆), trisilane (Si₃H₈), or tetrasilane (Si₄H₁₀).

3. The method of claim 1, wherein the n-type dopant precursor comprises at least one of phosphine (PH₃), arsine (AsH₃), tertiary butyl arsine (TBA), or tertiary butyl phosphine (TBP).

4. The method of claim 1, wherein the p-type dopant precursor comprises at least one of diborane (B₂H₆), trimethylgallium (TMG), triethylgallium (TEG), or trimethylaluminum (TMA).

5. The method of claim 1, wherein the co-doped polysilicon film has p-type conductivity.

6. The method of claim 1, wherein contacting the substrate with the silicon precursor further comprises introducing the silicon precursor into the reaction chamber at a flow greater than 10 sccm.

7. The method of claim 1, wherein contacting the substrate with the n-type dopant precursor further comprises introducing the n-type dopant precursor into the reaction chamber at a flow rate greater than 1 sccm.

8. The method of claim 1, wherein contacting the substrate with the p-type dopant precursor further comprises introducing the p-type dopant precursor into the reaction chamber at a flow rate greater than 0.01 sccm.

9. The method of claim 1, wherein the contacting the substrate with the n-type dopant precursor and the p-type dopant precursor further comprises introducing the n-type dopant precursor and the p-type dopant precursor into the reaction chamber at a flow rate ratio of approximately less than 5:

1.

10. The method of claim 1, wherein the pressure within the reaction chamber is less than 100 Torr.

11. The method of claim 1, wherein the polysilicon film is deposited by a chemical vapor deposition process.

12. A semiconductor device structure comprising the co-doped polysilicon film deposited by the method of claim 1.