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Semiconductor device including storage element

  • US 10,510,757 B2
  • Filed: 06/07/2017
  • Issued: 12/17/2019
  • Est. Priority Date: 10/30/2009
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a plurality of storage elements,wherein one of the plurality of storage elements includes;

    a first transistor including;

    a first gate electrode;

    one of a first source electrode and a first drain electrode; and

    the other of the first source electrode and the first drain electrode;

    a second transistor including;

    a second gate electrode;

    one of a second source electrode and a second drain electrode; and

    the other of the second source electrode and the second drain electrode; and

    a third transistor including;

    a third gate electrode;

    one of a third source electrode and a third drain electrode; and

    the other of the third source electrode and the third drain electrode,wherein the first transistor is provided in a substrate including a semiconductor material,wherein the second transistor includes an oxide semiconductor layer,wherein the first gate electrode and the one of the second source electrode and the second drain electrode are electrically connected to each other,wherein the other of the first source electrode and the first drain electrode and the one of the third source electrode and the third drain electrode are electrically connected to each other, andwherein the first transistor operates at a speed higher than that of the second transistor.

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