Semiconductor device with needle-shaped field plate structures in a transistor cell region and in an inner termination region
First Claim
1. A semiconductor device, comprising:
- a semiconductor portion comprising a first surface, a second surface opposite the first surface and a drift structure of a first conductivity type disposed between the first and second surfaces;
a transistor cell region comprising needle-shaped first field plate structures extending from the first surface into the semiconductor portion, and body regions of a second conductivity type opposite the first conductivity type surrounding the first field plate structures in a horizontal plane; and
an inner termination region surrounding the transistor cell region and comprising needle-shaped second field plate structures extending from the first surface into the semiconductor portion, the inner termination region being devoid of regions of the second conductivity type that are spaced from the second surface of the semiconductor portion.
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Abstract
A semiconductor device includes a semiconductor substrate, a transistor cell region formed in the semiconductor substrate and an inner termination region formed in the semiconductor substrate and devoid of transistor cells. The transistor cell region includes a plurality of transistor cells and a gate structure that forms a grid separating transistor sections of the transistor cells from each other, each of the transistor sections including a needle-shaped first field plate structure extending from a first surface into the semiconductor substrate. The inner termination region surrounds the transistor cell region and includes needle-shaped second field plate structures extending from the first surface into the semiconductor substrate. The first field plate structures form a first portion of a regular pattern and the second field plate structures form a second portion of the same regular pattern.
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Citations
26 Claims
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1. A semiconductor device, comprising:
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a semiconductor portion comprising a first surface, a second surface opposite the first surface and a drift structure of a first conductivity type disposed between the first and second surfaces; a transistor cell region comprising needle-shaped first field plate structures extending from the first surface into the semiconductor portion, and body regions of a second conductivity type opposite the first conductivity type surrounding the first field plate structures in a horizontal plane; and an inner termination region surrounding the transistor cell region and comprising needle-shaped second field plate structures extending from the first surface into the semiconductor portion, the inner termination region being devoid of regions of the second conductivity type that are spaced from the second surface of the semiconductor portion. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26)
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Specification