Forming a sacrificial liner for dual channel devices
First Claim
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1. A semiconductor device, comprising:
- one or more fins, each fin comprising;
a top channel portion formed from a channel material;
a middle portion, anda bottom substrate portion formed from a same material as an underlying substrate, each of the top channel portion and the middle portion having a different width than the bottom substrate portion;
an isolation dielectric layer formed between and around the bottom substrate portion of the one or more fins;
an oxide layer formed between the bottom substrate portion of each fin and the isolation layer, wherein a space extending to a depth below the top surface of the middle portion and above a bottom end of the bottom substrate portion exists between a sidewall of at least a top portion of the isolation dielectric layer and an adjacent sidewall of the one or more fins, above the oxide layer; and
a gate dielectric, protruding into the space and in contact with the middle portion, formed over the one or more fins and comprising a portion formed from a material different from the oxide layer.
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Abstract
Semiconductor devices include one or more fins. Each fin includes a top channel portion formed from a channel material and a bottom substrate portion formed from a same material as an underlying substrate, the top channel portion having a different width than the bottom substrate portion. An isolation dielectric layer formed between and around the bottom substrate portion of the one or more fins. A space exists between at least a top portion of the isolation dielectric layer and the one or more fins. A gate dielectric is formed over the one or more fins and in the space.
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Citations
16 Claims
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1. A semiconductor device, comprising:
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one or more fins, each fin comprising; a top channel portion formed from a channel material; a middle portion, and a bottom substrate portion formed from a same material as an underlying substrate, each of the top channel portion and the middle portion having a different width than the bottom substrate portion; an isolation dielectric layer formed between and around the bottom substrate portion of the one or more fins; an oxide layer formed between the bottom substrate portion of each fin and the isolation layer, wherein a space extending to a depth below the top surface of the middle portion and above a bottom end of the bottom substrate portion exists between a sidewall of at least a top portion of the isolation dielectric layer and an adjacent sidewall of the one or more fins, above the oxide layer; and a gate dielectric, protruding into the space and in contact with the middle portion, formed over the one or more fins and comprising a portion formed from a material different from the oxide layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A semiconductor device, comprising:
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one or more fins, each fin comprising; a top channel portion formed from a channel material; a middle portion; and a bottom substrate portion formed from a same material as an underlying substrate, wherein each of the top channel portion and the middle portion of each of the one or more fins has a width that is greater than a width of the bottom substrate portion of each respective fin; an isolation dielectric layer formed between and around the bottom substrate portion of the one or more fins; an oxide layer formed between the bottom substrate portion of each fin and the isolation layer, wherein a space extending to a depth below the top surface of the middle portion and above a bottom end of the bottom substrate portion exists between a sidewall of at least a top portion of the isolation dielectric layer and an adjacent sidewall of the one or more fins, above the oxide layer; and a gate dielectric, protruding into the space and in contact with the middle portion, formed over the one or more fins and comprising a portion formed from a material different from the oxide layer. - View Dependent Claims (12, 13, 14, 15, 16)
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Specification