Low temperature film for PCRAM sidewall protection
First Claim
1. A method for forming a phase change random access memory (PCRAM) device, the method comprising:
- forming a memory stack over an insulator layer;
performing a first etch process to pattern the memory stack defining a memory cell, wherein the memory cell comprises a top electrode overlying a dielectric layer, wherein the dielectric layer comprises a center region laterally between a first outer region and a second outer region, wherein an etchant used in the first etch process creates a compound in the first and second outer regions, and wherein the compound has a first melting point temperature; and
performing a first deposition process to form a first sidewall spacer over the memory cell, wherein the first sidewall spacer is in direct contact with outer sidewalls of the memory cell, and wherein the first deposition process reaches a first maximum temperature less than the first melting point temperature.
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Abstract
A method for forming a phase change random access memory (PCRAM) device is provided. The method includes: forming a memory stack over an insulator layer. A first etch process is performed to pattern the memory stack defining a memory cell including a top electrode overlying a dielectric layer. The dielectric layer includes a center region laterally between a first outer region and a second outer region. An etchant used in the first etch process creates a compound in the first and second outer regions, the compound has a first melting point temperature. A first deposition process is performed to form a first sidewall spacer over the memory cell, the first sidewall spacer is in direct contact with outer sidewalls of the memory cell. The first deposition process reaches a first maximum temperature less than the first melting point temperature.
6 Citations
20 Claims
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1. A method for forming a phase change random access memory (PCRAM) device, the method comprising:
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forming a memory stack over an insulator layer; performing a first etch process to pattern the memory stack defining a memory cell, wherein the memory cell comprises a top electrode overlying a dielectric layer, wherein the dielectric layer comprises a center region laterally between a first outer region and a second outer region, wherein an etchant used in the first etch process creates a compound in the first and second outer regions, and wherein the compound has a first melting point temperature; and performing a first deposition process to form a first sidewall spacer over the memory cell, wherein the first sidewall spacer is in direct contact with outer sidewalls of the memory cell, and wherein the first deposition process reaches a first maximum temperature less than the first melting point temperature. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method for forming a memory device, the method comprising:
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forming a memory cell stack over a via within an insulator layer; performing a first patterning process on the memory cell stack to define a memory cell, the memory cell includes a top electrode overlying a phase change layer, wherein the phase change layer is comprised of a first material, wherein an etchant used during the first patterning process combines with the first material to form a compound in the phase change layer; performing a first deposition process to form a first sidewall spacer around the memory cell, such that the first sidewall spacer directly contacts outer sidewalls of the memory cell, wherein the first deposition process reaches a first maximum temperature, wherein the first maximum temperature is less than a melting point temperature of the compound; and performing a second deposition process to form a second sidewall spacer over the first sidewall spacer, wherein the second sidewall spacer extends continuously from an upper surface of the first sidewall spacer to an upper surface of the insulator layer, wherein the second deposition process reaches a second maximum temperature greater than the first maximum temperature. - View Dependent Claims (11, 12, 13, 14, 15, 16)
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17. A phase change random access memory (PCRAM) device comprising:
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a memory cell over an insulator layer, the memory cell includes a top electrode overlying a phase change layer, wherein outer sidewalls of the top electrode are aligned with outer sidewalls of the phase change layer; and a first sidewall spacer in contact with outer sidewalls of the memory cell; wherein the phase change layer comprises a center region between a first outer region and a second outer region, wherein the center region comprises a first material, and wherein the first and second outer regions comprise a compound of the first material and a halogen element. - View Dependent Claims (18, 19, 20)
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Specification