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Method and apparatus for optical waveguide-to-semiconductor coupling and optical vias for monolithically integrated electronic and photonic circuits

  • US 10,514,509 B2
  • Filed: 01/10/2014
  • Issued: 12/24/2019
  • Est. Priority Date: 01/10/2013
  • Status: Active Grant
First Claim
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1. An optical out-of-plane coupler on a monolithically integrated metal-oxide-semiconductor (MOS) integrated circuit comprising:

  • a waveguide; and

    a grating coupled to the waveguide, the grating comprising a plurality of scattering units,each scattering unit further comprising;

    a first scattering element formed of a first shape formed in a polysilicon gate layer of the integrated circuit, anda second scattering element formed of a second shape formed in an active layer of the integrated circuit,each shape having width smaller than two microns,the polysilicon gate layer being also used to form gates of MOS transistors of the integrated circuit;

    the waveguide being formed in a layer comprising a layer selected from the group consisting of the polysilicon gate layer and the active layer;

    the first scattering element in each scattering unit having a first side (E1) disposed towards the waveguide and a second side (E2) disposed more distant from the waveguide than side E1;

    the second scattering element in each scattering unit having a first side (E3) disposed towards the waveguide and a second side (E4) disposed more distant from the waveguide than side E3;

    wherein sides E1 and E3 are offset along the in-plane propagation direction from the waveguide W to the grating;

    wherein sides E2 and E4 are offset along the in-plane propagation direction from the waveguide to the grating;

    wherein;

    if side E1 is closer to the waveguide than side E3, then side E2 is closer to the waveguide than side E4 and light will be scattered with constructive interference out-of-plane toward the second scattering elements,and if side E3 is closer to the waveguide than side E1, then side E4 is closer to the waveguide than side E2 and light will be scattered with constructive interference out-of-plane toward the first scattering elements; and

    wherein a distance from E1 to E3 is less than a design wavelength of light, the design wavelength being less than 1650 nanometers;

    and a distance measured in an axis perpendicular to a plane of the integrated circuit between the first and second scattering element being less than 500 nanometers.

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