Display device and electronic device including the display device

• US 10,514,579 B2
• Filed: 02/01/2016
• Issued: 12/24/2019
• Est. Priority Date: 07/20/2012
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Hosaka, Yasuharu, Shima, Yukinori, Okazaki, Kenichi, Yamazaki, Shunpei
• Primary Examiner(s): Kim, Richard H
• Application Number:
  US15/012,092
• Publication Number:
  US 20160147099A1
• Time in Patent Office: 1,422 Days
• Field of Search: None
• CPC Class Codes: G02F 1/133345 Insulating layers G02F1/1335, G02F1/1337, G02F1/135, G02F1/136 take precedence
• CPC Class Codes: G02F 1/133512 Light shielding layers, e.g. black matrix G02F1/136209 takes precedence
• CPC Class Codes: G02F 1/1337 Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
• CPC Class Codes: G02F 1/13454 Drivers integrated on the active matrix substrate G02F1/136277 takes precedence
• CPC Class Codes: G02F 1/136227 Through-hole connection of the pixel electrode to the active element through an insulation layer
• CPC Class Codes: G02F 1/1368 in which the switching element is a three-electrode device G02F1/136277 takes precedence
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/1248 with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement

Abstract

The display device includes a first substrate provided with a driver circuit region that is located outside and adjacent to a pixel region and includes at least one second transistor which supplies a signal to the first transistor in each of the pixels in the pixel region, a second substrate facing the first substrate, a liquid crystal layer between the first substrate and the second substrate, a first interlayer insulating film including an inorganic insulating material over the first transistor and the second transistor, a second interlayer insulating film including an organic insulating material over the first interlayer insulating film, and a third interlayer insulating film including an inorganic insulating material over the second interlayer insulating film. The third interlayer insulating film is provided in part of an upper region of the pixel region, and has an edge portion on an inner side than the driver circuit region.

Claims

1. A display device comprising:

a pixel portion comprising;

a first transistor;

a first insulating film over the first transistor;

a second insulating film over the first insulating film, the second insulating film comprising an opening;

a third insulating film over the second insulating film;

a pixel electrode over the third insulating film, the pixel electrode being electrically connected to the first transistor through the opening; and

a first alignment film over the third insulating film and the pixel electrode; and

a driver circuit portion comprising;

a second transistor;

the first insulating film over the second transistor; and

the second insulating film over the first insulating film,

wherein each of the first transistor and the second transistor comprises an oxide semiconductor layer comprising a channel formation region,

wherein the first transistor further comprises an electrode in contact with the oxide semiconductor layer,

wherein a part of the third insulating film is in contact with the electrode,

wherein the part of the third insulating film is in the opening of the second insulating film,

wherein the first insulating film comprises an inorganic insulating material,

wherein the second insulating film comprises an organic insulating material,

wherein the third insulating film comprises an inorganic insulating material, and

wherein a part of the second insulating film is in contact with the first alignment film.

2. The display device according to claim 1, further comprising:

a liquid crystal layer over the first alignment film; and

a second alignment film over the liquid crystal layer,

wherein the first alignment film and the second alignment film are in contact with each other.

3. The display device according to claim 2, further comprising:

a counter electrode over the second alignment film;

a insulating film over the counter electrode;

a colored film over the fourth insulating film; and

a light-blocking film over the fourth insulating film.

4. The display device according to claim 1,

wherein the oxide semiconductor layer comprises at least one of indium and zinc.

5. The display device according to claim 1,

wherein the oxide semiconductor layer comprises a first oxide semiconductor film and a second oxide semiconductor film.

6. An electronic device comprising the display device according to claim 1.

7. The display device according to claim 1,

wherein the part of the second insulating film overlaps the channel formation region of the first transistor and the channel formation region of the second transistor.

8. A display device comprising:

a pixel portion comprising;

a first transistor;

a first insulating film over the first transistor;

a second insulating film over the first insulating film, the second insulating film comprising an opening;

a third insulating film over the second insulating film; and

a pixel electrode over the third insulating film, the pixel electrode being electrically connected to the first transistor through the opening; and

a first alignment film over the third insulating film and the pixel electrode;

a driver circuit portion comprising;

a second transistor;

the first insulating film over the second transistor; and

the second insulating film over the first insulating film,

wherein each of the first transistor and the second transistor comprises an oxide semiconductor layer comprising a channel formation region,

wherein the first transistor further comprises an electrode in contact with the oxide semiconductor layer,

wherein a part of the third insulating film is in contact with the electrode,

wherein the part of the third insulating film is in the opening of the second insulating film,

wherein the first insulating film is silicon oxide film,

wherein the second insulating film is an acrylic-based resin film,

wherein the third insulating film is a silicon nitride film, and

wherein a part of the second insulating film is in contact with the first alignment film.

9. The display device according to claim 8, further comprising:

a liquid crystal layer over the first alignment film; and

a second alignment film over the liquid crystal layer,

wherein the first alignment film and the second alignment film are in contact with each other.

10. The display device according to claim 9, further comprising:

a counter electrode over the second alignment film;

a fourth insulating film over the counter electrode;

a colored film over the fourth insulating film; and

a light-blocking film over the fourth insulating film.

11. An electronic device comprising the display device according to claim 8.

12. The display device according to claim 8,

wherein the part of the second insulating film overlaps the channel formation region of the first transistor and the channel formation region of the second transistor.

13. A display device comprising:

a pixel portion comprising;

a first transistor;

a first insulating film over the first transistor;

a second insulating film over the first insulating film, the second insulating film comprising an opening;

a third insulating film over the second insulating film;

a first electrode over the third insulating film, the first electrode being electrically connected to the first transistor through the opening; and

a fourth insulating film over the third insulating film and the first electrode; and

a driver circuit portion comprising;

a second transistor;

the first insulating film over the second transistor; and

the second insulating film over the first insulating film,

wherein each of the first transistor and the second transistor comprises an oxide semiconductor layer comprising a channel formation region,

wherein the first transistor further comprises an electrode in contact with the oxide semiconductor layer,

wherein a part of the third insulating film is in contact with the electrode,

wherein the part of the third insulating film is in the opening of the second insulating film,

wherein the first insulating film comprises an inorganic insulating material,

wherein the second insulating film comprises an organic insulating material,

wherein the third insulating film comprises an inorganic insulating material,

wherein the fourth insulating film comprising an organic insulating material, and

wherein a part of the second insulating film is in contact with the fourth insulating film.

14. The display device according to claim 13, further comprising:

a second electrode over the fourth insulating film,

wherein the second electrode overlaps the first transistor with the second insulating film and the fourth insulating film therebetween.

15. The display device according to claim 14,

wherein the channel formation region of the first transistor and the second electrode overlap each other with the second insulating film and the fourth insulating film therebetween.

16. The display device according to claim 13,

wherein the fourth insulating film comprises an organic insulating material.

17. The display device according to claim 13,

wherein the second insulating film is any of an acrylic-based resin, a polyimide-based resin, a benzocyclobutene-based resin, a polyamide-based resin, and an epoxy-based resin.

18. An electronic device comprising the display device according to claim 13.

19. The display device according to claim 13,

wherein the part of the second insulating film overlaps the channel formation region of the first transistor and the channel formation region of the second transistor.

20. A display device comprising:

a first transistor;

a second transistor;

a first insulating film over the first transistor and the second transistor, the first insulating film comprising an inorganic insulating material;

a second insulating film over the first insulating film, the second insulating film comprising an organic insulating material;

a third insulating film over the second insulating film, the third insulating film comprising an inorganic insulating material; and

a pixel electrode over the third insulating film,

wherein each of the first transistor and the second transistor comprises a gate electrode, an oxide semiconductor film over the gate electrode with a gate insulating film between the gate electrode and the oxide semiconductor film, a first electrode in contact with the oxide semiconductor film and a second electrode in contact with the oxide semiconductor film,

wherein the first insulating film comprises a first opening overlapping a part of the first electrode,

wherein the second insulating film comprises a second opening overlapping the part of the first electrode,

wherein the third insulating film comprises a third opening overlapping the part of the first electrode,

wherein the pixel electrode is electrically connected to the first electrode of the first transistor through the first opening, the second opening and the third opening,

wherein a part of the third insulating film is in contact with the part of the first electrode,

wherein the third insulating film overlaps the first transistor, and

wherein the third insulating film does not overlap the second transistor.