Display device and electronic device including the display device

• US 10,514,580 B2
• Filed: 10/30/2018
• Issued: 12/24/2019
• Est. Priority Date: 07/20/2012
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Hosaka, Yasuharu, Shima, Yukinori, Okazaki, Kenichi, Yamazaki, Shunpei
• Primary Examiner(s): Kim, Richard H
• Application Number:
  US16/175,021
• Publication Number:
  US 20190064566A1
• Time in Patent Office: 420 Days
• Field of Search: None
• CPC Class Codes: G02F 1/133345 Insulating layers G02F1/1335, G02F1/1337, G02F1/135, G02F1/136 take precedence
• CPC Class Codes: G02F 1/133512 Light shielding layers, e.g. black matrix G02F1/136209 takes precedence
• CPC Class Codes: G02F 1/1337 Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
• CPC Class Codes: G02F 1/13454 Drivers integrated on the active matrix substrate G02F1/136277 takes precedence
• CPC Class Codes: G02F 1/136227 Through-hole connection of the pixel electrode to the active element through an insulation layer
• CPC Class Codes: G02F 1/1368 in which the switching element is a three-electrode device G02F1/136277 takes precedence
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/1248 with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement

Abstract

The display device includes a first substrate provided with a driver circuit region that is located outside and adjacent to a pixel region and includes at least one second transistor which supplies a signal to the first transistor in each of the pixels in the pixel region, a second substrate facing the first substrate, a liquid crystal layer between the first substrate and the second substrate, a first interlayer insulating film including an inorganic insulating material over the first transistor and the second transistor, a second interlayer insulating film including an organic insulating material over the first interlayer insulating film, and a third interlayer insulating film including an inorganic insulating material over the second interlayer insulating film. The third interlayer insulating film is provided in part of an upper region of the pixel region, and has an edge portion on an inner side than the driver circuit region.

Claims

1. A display device comprising:

a pixel portion comprising;

a first transistor;

a first insulating film over the first transistor;

a second insulating film over the first insulating film;

a first electrode over the second insulating film;

a third insulating film over the second insulating film and the first electrode; and

a second electrode over the third insulating film, the second electrode being electrically connected to the first transistor; and

a driver circuit portion comprising;

a second transistor;

the first insulating film over the second transistor; and

the second insulating film over the first insulating film,

wherein the third insulating film is in a first opening provided in the second insulating film,

wherein the first insulating film comprises an inorganic insulating material,

wherein the second insulating film comprises an organic insulating material,

wherein the third insulating film comprises an inorganic insulating material,

wherein an edge portion of the first opening overlaps with the third insulating film, and

wherein the driver circuit portion includes a region where the second insulating film is not covered by the third insulating film.

2. The display device according to claim 1, further comprising:

a third electrode over the second electrode;

a fourth insulating film over the third electrode;

a colored film over the fourth insulating film; and

a light-blocking film over the fourth insulating film.

3. The display device according to claim 1,

wherein the first insulating film is any of a silicon oxide film, a silicon oxynitride film, an aluminum oxide film, a hafnium oxide film, a gallium oxide film, and a Ga—

Zn-based metal oxide film, and

wherein the third insulating film is any of a silicon nitride film, a silicon nitride oxide film, and an aluminum oxide film.

4. The display device according to claim 1,

wherein the second insulating film is any of an acrylic-based resin, a polyimide-based resin, a benzocyclobutene-based resin, a polyamide-based resin, and an epoxy-based resin.

5. The display device according to claim 1,

wherein the first transistor and the second transistor each comprises an oxide semiconductor layer.

6. The display device according to claim 5,

wherein the oxide semiconductor layer comprises indium and zinc.

7. An electronic device comprising the display device according to claim 1.

8. The display device according to claim 1,

wherein a second opening is provided in the first insulating film, and

wherein an edge portion of the second opening overlaps with the third insulating film.

9. The display device according to claim 1,

wherein a second opening is provided in the first insulating film, and

wherein an edge portion of the second opening is in contact with the third insulating film.

10. The display device according to claim 1,

wherein the first transistor and the second transistor each comprises a gate insulating film, a source electrode, and a drain electrode, and

wherein bottom surfaces of the source electrode and the drain electrode are in contact with a top surface of the gate insulating film.

11. A display device comprising:

a pixel portion comprising;

a first transistor;

a first insulating film over the first transistor;

a second insulating film over the first insulating film;

a first electrode over the second insulating film;

a first opening provided in the second insulating film;

a third insulating film over and in contact with the second insulating film and the first electrode;

a second opening provided in the third insulating film; and

a second electrode over the third insulating film, the second electrode being electrically connected to the first transistor;

a liquid crystal layer over the second electrode; and

a driver circuit portion comprising;

a second transistor;

the first insulating film over the second transistor; and

the second insulating film over the first insulating film,

wherein the third insulating film is in the first opening,

wherein the first opening includes a region overlapping with the second opening,

wherein the first insulating film comprises an inorganic insulating material,

wherein the second insulating film comprises an organic insulating material,

wherein the third insulating film comprises an inorganic insulating material, and

wherein an edge portion of the first opening overlaps with the third insulating film.

12. The display device according to claim 11, further comprising:

a first alignment film over the second electrode;

a second alignment film over the liquid crystal layer;

a third electrode over the second alignment film;

a fourth insulating film over the third electrode;

a colored film over the fourth insulating film; and

a light-blocking film over the fourth insulating film.

13. The display device according to claim 11,

wherein the first insulating film is any of a silicon oxide film, a silicon oxynitride film, an aluminum oxide film, a hafnium oxide film, a gallium oxide film, and a Ga—

Zn-based metal oxide film, and

wherein the third insulating film is any of a silicon nitride film, a silicon nitride oxide film, and an aluminum oxide film.

14. The display device according to claim 11,

wherein the second insulating film is any of an acrylic-based resin, a polyimide-based resin, a benzocyclobutene-based resin, a polyamide-based resin, and an epoxy-based resin.

15. The display device according to claim 11,

wherein the first transistor and the second transistor each comprises an oxide semiconductor layer.

16. The display device according to claim 15,

wherein the oxide semiconductor layer comprises indium and zinc.

17. An electronic device comprising the display device according to claim 11.

18. The display device according to claim 11,

wherein a third opening is provided in the first insulating film, and

wherein an edge portion of the third opening overlaps with the third insulating film.

19. The display device according to claim 11,

wherein a third opening is provided in the first insulating film, and

wherein an edge portion of the third opening is in contact with the third insulating film.

20. The display device according to claim 11,

wherein the first transistor and the second transistor each comprises a gate insulating film, a source electrode, and a drain electrode, and

wherein bottom surfaces of the source electrode and the drain electrode are in contact with a top surface of the gate insulating film.

21. A display device comprising:

a pixel portion comprising;

a first transistor;

a first insulating film over the first transistor;

a second insulating film over the first insulating film;

a first electrode over the second insulating film;

a third insulating film over the second insulating film and the first electrode; and

a second electrode over the third insulating film, the second electrode being electrically connected to the first transistor;

a liquid crystal layer over the second electrode; and

a driver circuit portion comprising;

a second transistor;

the first insulating film over the second transistor; and

the second insulating film over the first insulating film,

wherein a first opening is provided in the second insulating film,

wherein the first insulating film comprises an inorganic insulating material,

wherein the second insulating film comprises an organic insulating material,

wherein the third insulating film comprises an inorganic insulating material,

wherein an edge portion of the first opening overlaps with the third insulating film, and

wherein the driver circuit portion includes a region where the second insulating film is not covered by the third insulating film.

22. The display device according to claim 21, further comprising:

a first alignment film over the second electrode;

a second alignment film over the liquid crystal layer;

a third electrode over the second alignment film;

a fourth insulating film over the third electrode;

a colored film over the fourth insulating film; and

a light-blocking film over the fourth insulating film.

23. The display device according to claim 21,

wherein the first insulating film is any of a silicon oxide film, a silicon oxynitride film, an aluminum oxide film, a hafnium oxide film, a gallium oxide film, and a Ga—

Zn-based metal oxide film, and

wherein the third insulating film is any of a silicon nitride film, a silicon nitride oxide film, and an aluminum oxide film.

24. The display device according to claim 21,

wherein the second insulating film is any of an acrylic-based resin, a polyimide-based resin, a benzocyclobutene-based resin, a polyamide-based resin, and an epoxy-based resin.

25. The display device according to claim 21,

wherein the first transistor and the second transistor each comprises an oxide semiconductor layer.

26. The display device according to claim 25,

wherein the oxide semiconductor layer comprises indium and zinc.

27. An electronic device comprising the display device according to claim 21.

28. The display device according to claim 21,

wherein a second opening is provided in the first insulating film, and

wherein an edge portion of the second opening overlaps with the third insulating film.

29. The display device according to claim 21,

wherein a second opening is provided in the first insulating film, and

wherein an edge portion of the second opening is in contact with the third insulating film.

30. The display device according to claim 21,

wherein the first transistor and the second transistor each comprises a gate insulating film, a source electrode, and a drain electrode, and

wherein bottom surfaces of the source electrode and the drain electrode are in contact with a top surface of the gate insulating film.