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FinFET device

  • US 10,515,793 B2
  • Filed: 03/14/2018
  • Issued: 12/24/2019
  • Est. Priority Date: 12/30/2015
  • Status: Active Grant
First Claim
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1. A device comprising:

  • a fin structure;

    a dielectric layer over the fin structure;

    a gate over the dielectric layer;

    a spacer on a sidewall of the gate, wherein the spacer has a thickness along a direction parallel to a longitudinal axis of the fin structure, and a distance along the direction from an outer sidewall of the spacer to an end surface of the fin structure is greater than the thickness of the spacer; and

    an epitaxy structure in contact with the fin structure.

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