FinFET device
First Claim
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1. A device comprising:
- a fin structure;
a dielectric layer over the fin structure;
a gate over the dielectric layer;
a spacer on a sidewall of the gate, wherein the spacer has a thickness along a direction parallel to a longitudinal axis of the fin structure, and a distance along the direction from an outer sidewall of the spacer to an end surface of the fin structure is greater than the thickness of the spacer; and
an epitaxy structure in contact with the fin structure.
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Abstract
A device includes a fin structure, a dielectric layer, a gate a spacer, and an epitaxy structure. The dielectric layer is over the fin structure. The gate is over the dielectric layer. The spacer is on a sidewall of the gate. The spacer has a thickness along a direction parallel to a longitudinal axis of the fin structure, and a distance along the direction from an outer sidewall of the spacer to an end surface of the fin structure is greater than the thickness of the spacer. The epitaxy structure is in contact with the fin structure.
15 Citations
20 Claims
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1. A device comprising:
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a fin structure; a dielectric layer over the fin structure; a gate over the dielectric layer; a spacer on a sidewall of the gate, wherein the spacer has a thickness along a direction parallel to a longitudinal axis of the fin structure, and a distance along the direction from an outer sidewall of the spacer to an end surface of the fin structure is greater than the thickness of the spacer; and an epitaxy structure in contact with the fin structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A device comprising:
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a fin structure; a dielectric layer over the fin structure; a gate over the dielectric layer; a spacer on a sidewall of the gate; and an epitaxy structure, wherein the epitaxy structure has a first step and a second step, an end surface of the fin structure is in contact with the first step, and an end surface of the dielectric layer is in contact with the second step. - View Dependent Claims (12, 13, 14, 15, 16)
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17. A device comprising:
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a fin structure; a dielectric layer over the fin structure, wherein an inner sidewall of the dielectric layer is exposed by the fin structure, and the dielectric layer extends from sidewalls of the fin structure to beyond opposite end surfaces of the fin structure along a longitudinal axis of the fin structure; and a gate on an outer sidewall of the dielectric layer. - View Dependent Claims (18, 19, 20)
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Specification